Bishnupur Ramananda College

Bānkura, India

Bishnupur Ramananda College

Bānkura, India
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Ganguly J.,Brahmankhanda Basapara High School | Saha S.,Bishnupur Ramananda College | Pal S.,Hetampur Raj High School | Ghosh M.,Visva Bharati University
Optics Communications | Year: 2016

We perform a meticulous analysis of profiles of third-order nonlinear optical susceptibility (TONOS) of impurity doped quantum dots (QDs) in the presence and absence of noise. We have invoked Gaussian white noise in the present study and noise has been introduced to the system additively and multiplicatively. The QD is doped with a Gaussian impurity. A magnetic field applied perpendicularly serves as a confinement source and the doped system has been exposed to a static external electric field. The TONOS profiles have been monitored against a continuous variation of incident photon energy when several important parameters such as electric field strength, magnetic field strength, confinement energy, dopant location, Al concentration, dopant potential, relaxation time, anisotropy, and noise strength assume different values. Moreover, the influence of mode of introduction of noise (additive/multiplicative) on the TONOS profiles has also been addressed. The said profiles are found to be consisting of interesting observations such as shift of TONOS peak position and maximization/minimization of TONOS peak intensity. The presence of noise alters the features of TONOS profiles and sometimes enhances the TONOS peak intensity from that of noise-free state. Furthermore, the mode of application of noise also often tailors the TONOS profiles in diverse fashions. The observations accentuate the possibility of tuning the TONOS of doped QD systems in the presence of noise. © 2015 Elsevier B.V. All rights reserved.


Ganguly J.,Brahmankhanda Basapara High School | Saha S.,Bishnupur Ramananda College | Bera A.,Visva Bharati University | Ghosh M.,Visva Bharati University
Superlattices and Microstructures | Year: 2016

We examine the profiles of optical rectification (OR), second harmonic generation (SHG) and third harmonic generation (THG) of impurity doped QDs under the combined influence of hydrostatic pressure (HP) and temperature (T) in presence and absence of Gaussian white noise. Noise has been incorporated to the system additively and multiplicatively. In order to study the above nonlinear optical (NLO) properties the doped dot has been subjected to a polarized monochromatic electromagnetic field. Effect of application of noise is nicely reflected through alteration of peak shift (blue/red) and variation of peak height (increase/decrease) of above NLO properties as temperature and pressure are varied. All such changes again sensitively depends on mode of application (additive/multiplicative) of noise. The remarkable influence of interplay between noise strength and its mode of application on the said profiles has also been addressed. The findings illuminate fascinating role played by noise in tuning above NLO properties of doped QD system under the active presence of both hydrostatic pressure and temperature. © 2016 Elsevier Ltd


Saha S.,Bishnupur Ramananda College | Ganguly J.,Brahmankhanda Basapara High School | Pal S.,Hetampur Raj High School | Ghosh M.,Visva Bharati University
Chemical Physics Letters | Year: 2016

We study the modulation of electro-optic effect (EOE) of impurity doped QD under the influence of geometrical anisotropy and position-dependent effective mass (PDEM) in presence of Gaussian white noise. Always a comparison has been made between fixed effective mass (FEM) and PDEM to understand the role of the latter. In addition, the role of mode of application of noise (additive/multiplicative) has also been analyzed. The EOE profiles are found to be enriched with shift of peak position and maximization of peak intensity. The observations reveal sensitive interplay between noise and anisotropy/PDEM to fine-tune the features of EOE profiles. © 2016 Elsevier B.V. All rights reserved.


Saha S.,Bishnupur Ramananda College | Ganguly J.,Brahmankhanda Basapara High School | Ghosh M.,Visva Bharati University
Physica B: Condensed Matter | Year: 2015

We make a rigorous exploration of the profiles of off-diagonal components of frequency-dependent linear (αxy, αyx), first nonlinear (βxyy, βyxx), and second nonlinear (γxxyy, γyyxx) polarizabilities of quantum dots driven by Gaussian white noise. The quantum dot is doped with repulsive Gaussian impurity. Noise has been applied additively and multiplicatively to the system. An external oscillatory electric field has also been applied to the system. Gradual variations of external frequency, dopant location, and noise strength give rise to interesting features of polarizability components. The observations reveal intricate interplay between noise strength and dopant location which designs the polarizability profiles. Moreover, the mode of application of noise also modulates the polarizability components. Interestingly, in case of additive noise the noise strength has no role on polarizabilities whereas multiplicative noise invites greater delicacy in them. The said interplay provides a rather involved framework to attain stable, enhanced, and often maximized output of linear and nonlinear polarizabilities. © 2015 Elsevier B.V.


Saha S.,Bishnupur Ramananda College | Ghosh M.,Visva Bharati University
Brazilian Journal of Physics | Year: 2016

We perform a rigorous analysis of the profiles of a few diagonal and off-diagonal components of linear (αxx, αyy, αxy, and αyx), first nonlinear (βxxx, βyyy, βxyy, and βyxx), and second nonlinear (γxxxx, γyyyy, γxxyy, and γyyxx) polarizabilities of quantum dots exposed to an external pulsed field. Simultaneous presence of multiplicative white noise has also been taken into account. The quantum dot contains a dopant represented by a Gaussian potential. The number of pulse and the dopant location have been found to fabricate the said profiles through their interplay. Moreover, a variation in the noise strength also contributes evidently in designing the profiles of above polarizability components. In general, the off-diagonal components have been found to be somewhat more responsive to a variation of noise strength. However, we have found some exception to the above fact for the off-diagonal βyxx component. The study projects some pathways of achieving stable, enhanced, and often maximized output of linear and nonlinear polarizabilities of doped quantum dots driven by multiplicative noise. © 2015, Sociedade Brasileira de Física.


Bera A.,Visva Bharati University | Saha S.,Bishnupur Ramananda College | Ganguly J.,Brahmankhanda Basapara High School | Ghosh M.,Brahmankhanda Basapara High School
Journal of Physics and Chemistry of Solids | Year: 2016

We explore diamagnetic susceptibility (DMS) of impurity doped quantum dot (QD) in presence of Gaussian white noise. Noise has been introduced to the system additively and multiplicatively. In view of these profiles of DMS have been pursued with variations of several important quantities e.g. magnetic field strength, confinement frequency, dopant location, dopant potential, and aluminium concentration, both in presence and absence of noise. We have invariably envisaged noise-induced suppression of DMS. Moreover, the extent of suppression noticeably depends on mode of application (additive/multiplicative) of noise. The said mode of application also plays a governing role in the onset of saturation of DMS values. The present study provides a deep insight into the promising role played by noise in controlling effective confinement imposed on the system which bears significant relevance. © 2016 Elsevier Ltd


Ganguly J.,Brahmankhanda Basapara High School | Saha S.,Bishnupur Ramananda College | Pal S.,Hetampur Raj High School | Ghosh M.,Visva Bharati University
Physica E: Low-Dimensional Systems and Nanostructures | Year: 2016

We make an extensive investigation of linear, third-order nonlinear, and total optical absorption coefficients (ACs) of impurity doped quantum dots (QDs) in presence and absence of noise. The noise invoked in the present study is a Gaussian white noise. The quantum dot is doped with repulsive Gaussian impurity. Noise has been introduced to the system additively and multiplicatively. A perpendicular magnetic field acts as a source of confinement and a static external electric field has been applied. The AC profiles have been studied as a function of incident photon energy when several important parameters such as optical intensity, electric field strength, magnetic field strength, confinement energy, dopant location, relaxation time, Al concentration, dopant potential, and noise strength take on different values. In addition, the role of mode of application of noise (additive/multiplicative) on the AC profiles has also been analyzed meticulously. The AC profiles often consist of a number of interesting observations such as one photon resonance enhancement, shift of AC peak position, variation of AC peak intensity, and bleaching of AC peak. However, presence of noise alters the features of AC profiles and leads to some interesting manifestations. Multiplicative noise brings about more complexity in the AC profiles than its additive counterpart. The observations indeed illuminate several useful aspects in the study of linear and nonlinear optical properties of doped QD systems, specially in presence of noise. The findings are expected to be quite relevant from a technological perspective. © 2015 Elsevier B.V. All rights reserved.


Saha S.,Bishnupur Ramananda College | Ghosh M.,Visva Bharati University
Journal of Physics and Chemistry of Solids | Year: 2016

We perform a broad exploration of profiles of third harmonic generation (THG) susceptibility of impurity doped quantum dots (QDs) in the presence and absence of noise. We have invoked Gaussian white noise in the present study. A Gaussian impurity has been introduced into the QD. Noise has been applied to the system additively and multiplicatively. A perpendicular magnetic field emerges out as a confinement source and a static external electric field has been applied. The THG profiles have been pursued as a function of incident photon energy when several important parameters such as electric field strength, magnetic field strength, confinement energy, dopant location, Al concentration, dopant potential, relaxation time and noise strength assume different values. Moreover, the role of the pathway through which noise is applied (additive/multiplicative) on the THG profiles has also been deciphered. The THG profiles are found to be decorated with interesting observations such as shift of THG peak position and maximization/minimization of THG peak intensity. Presence of noise alters the characteristics of THG profiles and sometimes enhances the THG peak intensity. Furthermore, the mode of application of noise (additive/multiplicative) also regulates the THG profiles in a few occasions in contrasting manners. The observations highlight the possible scope of tuning the THG coefficient of doped QD systems in the presence of noise and bears tremendous technological importance. © 2015 Elsevier Ltd.


Pal S.,Hetampur Raj High School | Ganguly J.,Brahmankhanda Basapara High School | Saha S.,Bishnupur Ramananda College | Ghosh M.,Visva Bharati University
Journal of Physics and Chemistry of Solids | Year: 2016

We explore the profiles of electro-optic effect (EOE) of impurity doped quantum dots (QDs) in presence and absence of noise. We have invoked Gaussian white noise in the present study. The quantum dot is doped with Gaussian impurity. Noise has been administered to the system additively and multiplicatively. A perpendicular magnetic field acts as a confinement source and a static external electric field has been applied. The EOE profiles have been followed as a function of incident photon energy when several important parameters such as electric field strength, magnetic field strength, confinement energy, dopant location, relaxation time, Al concentration, dopant potential, and noise strength possess different values. In addition, the role of mode of application of noise (additive/multiplicative) on the EOE profiles has also been scrutinized. The EOE profiles are found to be adorned with interesting observations such as shift of peak position and maximization/minimization of peak intensity. However, the presence of noise and also the pathway of its application bring about rich variety in the features of EOE profiles through some noticeable manifestations. The observations indicate possibilities of harnessing the EOE susceptibility of doped QD systems in presence of noise. © 2015 Elsevier Ltd. All rights reserved.


Ganguly J.,Brahmankhanda Basapara High School | Saha S.,Bishnupur Ramananda College | Ghosh M.,Visva Bharati University
Chemical Physics Letters | Year: 2015

We explore the profiles of off-diagonal components of frequency-dependent linear, first, and second nonlinear polarizabilities of impurity doped quantum dot. The dopant propagates in an environment that damps the motion. Simultaneous presence of noise inherent to the system has also been considered. The dopant has a Gaussian potential and noise considered is a Gaussian white noise. Noise-damping coupling strength appears to be the key parameter that designs the profiles of polarizability components. The frequency of external field also affects the profiles of Polarizability components. The present investigation highlights some interesting features in the optical properties of doped quantum dots. © 2014 Elsevier B.V. All rights reserved.

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