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Fan T.,Nanjing University of Technology | Chen C.,Nanjing University of Technology | Tang Z.,BengBu Design and Research Institute for Glass Industry
RSC Advances | Year: 2016

BiFeO3/BiVO4 heterojunction photocatalysts were synthesized by a hydrothermal method. The structures and optical properties of the as-prepared products were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), field-emission transmission electron microscopy (TEM), and UV-vis absorption spectroscopy, respectively. The photocatalytic performances of the as-synthesized products were thoroughly evaluated via the degradation of Rhodamine B (RhB) under visible light irradiation. Experimental results showed that 50% mole ratio of BiFeO3 to BiFeO3/BiVO4 photocatalyst exhibited the highest photocatalytic activity compared to other as-prepared products. Moreover, the stability of the as-prepared photocatalyst during the photocatalytic process was also investigated. In addition, the enhanced photocatalytic activity of the as-prepared products could be probably ascribed to the high separation efficiency of the photogenerated electron-hole pairs generated at the heterojunction between BiFeO3 and BiVO4. © 2016 The Royal Society of Chemistry. Source


Fan T.,Nanjing University of Technology | Chen C.,Nanjing University of Technology | Tang Z.,BengBu Design and Research Institute for Glass Industry | Ni Y.,Nanjing University of Technology | Lu C.,Nanjing University of Technology
Materials Science in Semiconductor Processing | Year: 2015

Abstract The novel visible light-induced g-C3N4/BiFeO3 composites were successfully synthesized by introducing BiFeO3 into polymeric g-C3N4. The structures and optical properties of composites were characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), scanning electron microscopy (SEM), field-emission transmission electron microscope (TEM), UV-vis diffuse reflection spectroscopy (DRS), respectively. For the degradation of Rhodamine B (RhB), the g-C3N4/BiFeO3 composites exhibited significantly higher visible light photocatalytic activity than that of a single semiconductor. The optimal percentage of doped g-C3N4 was 50%. Both photooxidation and photoreduction processes follow first order kinetics. In addition, the stability of the prepared photocatalyst in the photocatalytic process was also investigated. The enhanced photocatalytic performance could be due to the high separation efficiency of the photogenerated electron-holes pairs. The possible photocatalytic mechanism of g-C3N4/BiFeO3 was proposed to guide the further improvement of their photocatalytic activity. © 2015 Elsevier Ltd. Source


Wang Y.,Dalian Jiaotong University | Wang H.,Dalian Jiaotong University | Liu C.,Dalian Jiaotong University | Wang Y.,BengBu Design and Research Institute for Glass Industry | And 2 more authors.
Materials Science in Semiconductor Processing | Year: 2012

Transparent conducting Al-doped ZnO (ZnO:Al, AZO) thin films were prepared at substrate temperature of 270 °C by pulsed direct current magnetron sputtering. NaOH solution (5 wt%) was employed to etch the AZO films at room temperature, and the surface textured AZO films were obtained successfully. The relationship between the surface textured structures and the etching process controlled by etching time was discussed. The textured morphology of the etched AZO films became clear as increasing the etching time, and the AZO film etched for 30 min exhibited uniformly and distinctly crater-like surface textured structure. Correspondingly, the haze and the resistivity increased with the increasing etching time. And the resistivity of the AZO film etched for 30 min was 3.2×10 -3 Ω cm. © 2012 Elsevier Ltd. Source


Meng F.,Ningbo Institute of Materials Technology and Engineering | Peng S.,State Key Laboratory of Advanced Technology for Float Glass | Peng S.,BengBu Design and Research Institute for Glass Industry | Xu G.,State Key Laboratory of Advanced Technology for Float Glass | And 5 more authors.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films | Year: 2015

The role of negative ions in the sputter deposition of oxides can be termed negative in the sense that they typically cause radiation-induced structural damage during film growth. For magnetron sputtered Al-doped ZnO (AZO) films, efforts have been made to alleviate the radiation damage by decreasing the discharge voltage being the lower limit explored. Here, the authors report initial results of depositing highly conductive and transparent AZO films by reducing down to 40V. The deposition was performed by sputtering an AZO target using dense magnetron discharges, in which an 81MHz radio frequency power was superimposed onto a DC power applied to the cathode. The authors found an optimal window within which high quality AZO films, with a <4×10-4 Ω cm resistivity, >30cm2/(V s) Hall mobility, and >88% visible transmittance, were obtained at relatively high deposition rates (>30nm/min). Based on the corresponding structural features, i.e., a full mass density coupled with a slight c-axis contraction along the out-of-plane direction, energetic negative ions were identified to have dominated in the structural evolution. The window was then interpreted in terms of two competitive kinetic processes simultaneously caused by the energetic negative ions: void reduction via ballistic relocation of atoms as well as residual radiation-induced damage. The findings thus reveal a positive role (i.e., concomitant densification) played by the negative ions in growing high quality fully dense AZO films, which has been overshadowed by the excessive radiation damage induced by ions with relatively higher energies. © 2015 American Vacuum Society. Source


Peng S.,BengBu Design and Research Institute for Glass Industry | Ma L.,BengBu Design and Research Institute for Glass Industry | Wang Y.,BengBu Design and Research Institute for Glass Industry | Ren Z.,BengBu Design and Research Institute for Glass Industry
Taiyangneng Xuebao/Acta Energiae Solaris Sinica | Year: 2014

CIGS film was prepared by sputtering from a single target, than it was annealed. XRD, and EDS measurement gave information about the crystal grain becoming larger and the losing of In and Se after annealing. Finally, the ration of Cu/In+Ga and Ga/In+Ga can meet a standard of high efficiency CIGS cell. Raman spactra showed that there is CIS on the surface of sample after annealing. Source

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