Belarusian State University of Informatics and Radioelectronics
Minsk, Belarus

The Belarusian State University of Informatics and Radioelectronics, also known as BSUIR , is a public Higher Education Institution accredited by the Ministry of Education of the Republic of Belarus. Nowadays it is a large educational and scientific complex in Minsk, Belarus. BSUIR was founded on March 15, 1964, and plays a leading role in preparing its students in the fields of computer science, radioelectronics and telecommunications in Belarus. Over 50,000 engineers and 1,000 Ph.D. and Sc.D.s, successfully working in the most science-intensive fields of the Belarus economy, have graduated from the university. BSUIR employs 2academicians and 2 corresponding members of the National Academy of science of Belarus, 301 Professors, and 317 Doctors of Science. Circa 17,000 students are taking courses out of 108 degree and non-degree programs; over 500 are foreign students.The University embracec 10 faculties, 38 chairs; Institute for Professional Development and Retraining of Top Managers and Specialists in Information Technologies and Radioelectronicsing ; R&D Unit. Educational process is supported by:• 27 branches of academic departments at enterprizes;• 176 educational and research labs;• 33 joint educational, research and production labs;• 8 certified educational centres established in cooperation with such world leading companies as Microsoft, IBM, Cisco, National Instruments, INTES, SAP, NVIDIA, Forte Knowledge. Wikipedia.

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Golosov D.A.,Belarusian State University of Informatics and Radioelectronics
Vacuum | Year: 2017

Discharge characteristics of the planar axial magnetron sputtering systems (MSS) with different dimensions and level of unbalance of their magnetic systems were investigated. Additional coils were used to change the level of the magnetron unbalance (the configuration of the magnetic field over the target surface). For these configurations of the magnetrons, the dependencies of the discharge voltage, substrate ion current density, deposition rate, minimal working pressure on MSS geometrical unbalance (KG) were received. Based on the data obtained it was determined that for all MSS, independent of the dimensions of magnetic system, the magnetic field of balanced configuration is formed at KG = 1.235–1.27, and the discharge voltage has maximal conductivity. If KG is decreased the magnetic field with unbalanced configuration of second type is formed, at greater KG the magnetic field of the first type is developed. For all investigated configurations of the magnetrons the minimal working pressure can be reached at a lower level of the geometric unbalance (KG = 1.02–1.125) compared to the minimal discharge voltage, and it is independent of the dimensions of magnetron's magnetic system. © 2017 Elsevier Ltd

Tsegel'Nik V.,Belarusian State University of Informatics and Radioelectronics
Journal of Physics: Conference Series | Year: 2017

The Painlevé-analysis was performed for solutions of nonlinear third-order autonomous system of differential equations with quadratic nonlinearities on their right-hand sides. At certain values of two constant parameters incorporated into the system, the latter exhibits complex chaotic behavior. When the parameters attain the values corresponding to complex chaotic behavior, the system was found not to possess the Painlevé property. © Published under licence by IOP Publishing Ltd.

Evarestov R.A.,Saint Petersburg State University | Migas D.B.,Belarusian State University of Informatics and Radioelectronics | Zhukovskii Yu.F.,University of Latvia
Journal of Physical Chemistry C | Year: 2012

The rod symmetry groups for monoperiodic (1D) nanostructures have been applied for construction of models for bulk-like titania nanowires (NWs) cut from a rutilebased 3D crystal along the direction of a chosen crystallographic symmetry axis (in this study we consider only Ti atomcentered axes). The most stable [001]-oriented TiO 2 NWs with rhombic cross sections are found to display the energetically preferable {110} facets only, while the nanowires with quasi-square sections across the [110] axis are formed by the alternating {110} and {001} facets. For simulations on rutile-based nanowires possessing four different diameters for each NW type, we have performed comparative large-scale ab initio Density Functional Theory (DFT) calculations with total geometry optimization within the Generalized Gradient Approximation (GGA), using the two different formalisms: (i) linear combination of localized atomic functions (LCAO) and (ii) plane waves (PW). Both approaches have been used for calculations of: (a) the key properties of defectless rutile titania bulk (structure parameters a, c, and u, Ti-O bond lengths, and effective atomic charges q O and q Ti plus a band gap Δε g) and (b) the structural and electronic properties depending on orientation, shape, and diameter of TiO 2 [001]- and [110]-oriented NWs (changes of diameters d NW and unit cell lengths l NW of nanowires during geometry optimization, correlated with difference of total energies per formula unit in a nanowire and bulk, as well as effective charges and band gaps). Values of d NW slightly increase, whereas lNW are found to be reduced after optimization, except for the thinnest [110]-NW (d NW ∼3 Å) for which the unit cell contains only three formula units, making it similar to a nanofilament. The larger the NW diameter, the closer its structural and electronic parameters are to those of rutile TiO 2 bulk. We have obtained the semiquantitative correlation between the results of DFT-LCAO and DFT-PW calculations. © 2012 American Chemical Society.

Khoroshko L.S.,Belarusian State University of Informatics and Radioelectronics
Journal of Physics: Conference Series | Year: 2015

Fabrication of porous anodic alumina film structures using anodizing, sol-gel synthesis and photolithography is reported. The structures receive interest as planar waveguides due to strong photoluminescence of the embedded trivalent lanthanides. Mesoporous structures comprising sol-gel derived titania in porous anodic alumina play a role of effective catalyst for water purification.

Shaposhnikov V.L.,Belarusian State University of Informatics and Radioelectronics | Krivosheeva A.V.,Belarusian State University of Informatics and Radioelectronics | Borisenko V.E.,Belarusian State University of Informatics and Radioelectronics | Lazzari J.-L.,CNRS Interdisciplinary Center on Nanoscience in Marseille | D'Avitaya F.A.,CNRS Interdisciplinary Center on Nanoscience in Marseille
Physical Review B - Condensed Matter and Materials Physics | Year: 2012

The structural, electronic, and optical properties of II-IV-V 2 (II = Be, Mg, Zn, Cd; IV = Si, Ge, Sn; V = P, As) chalcopyrite-type ternaries have been theoretically investigated from first principles. The compounds demonstrate semiconducting behavior, with the direct-band gap ranging from about 0.2 to 2.2 eV, except for Be-containing materials, which indicate an indirect gap. The band gaps in II-IV-P 2 are always larger than corresponding ones in II-IV-As 2. All compounds are characterized by similar optical spectra with some anisotropy effects. MgGeAs 2, MgSnP 2, MgSnAs 2, ZnSiAs 2, ZnGeP 2, ZnSnP 2, CdSiAs 2, and CdGeP 2 were found to have the dipole matrix element of the first direct transition comparable with one for GaAs, that may be useful in light-emitting structures. ZnSiAs 2, ZnSnAs 2, and their solid solutions seem to be the most promising candidates for photovoltaic applications because of their reflectance and absorption spectra. © 2012 American Physical Society.

Sinkevich E.,Belarusian State University of Informatics and Radioelectronics
IEEE International Symposium on Electromagnetic Compatibility | Year: 2014

A worst-case approach to development of nonlinear models for RF front-ends and components is proposed. This approach makes it possible to avoid the omission of nonlinear interference in process of the computer simulation, which is very important for EMC analysis. Based on the proposed approach, we developed a technique for synthesis of the models intended for the use in framework of the discrete nonlinear analysis technology. For validation of the developed technique, nonlinear behavioral model of a microwave amplifier was synthesized. © 2014 IEEE.

Mordachev V.,Belarusian State University of Informatics and Radioelectronics
IEEE International Symposium on Electromagnetic Compatibility | Year: 2015

The practical method of worst-case estimation of the total electromagnetic background near ground surface created by different radio systems is offered. This method takes into consideration heterogeneity of radioelectronic environment formed by the full set of stationary and mobile transmitters of different radio services, and peculiarities of radio wave propagation on different distances between transmitters and observation point, and of statistical features of electromagnetic fields in observation point generated by these transmitters. The presented method allow to estimate the fundamental upper bound of electromagnetic background total intensity created by heterogeneous radioelectronic environment, directly on the basis of estimation of the total electromagnetic loading on territory as the total equivalent isotropic radiated power of full set of transmitters of all services falling to the unit of the area of considered territory. The presented results ensure the facilities of EMC diagnostics and design of ultra wide band radio systems using nonsine radio waves, and cognitive radio systems using frequency bands on the secondary basis, and of support of the acceptable electromagnetic environmental conditions in populous areas. © 2015 IEEE.

Velichko O.I.,Belarusian State University of Informatics and Radioelectronics
Philosophical Magazine | Year: 2016

Modelling of radiation-enhanced diffusion (RED) of boron and phosphorus atoms during irradiation of silicon substrates respectively with high- and low-energy protons was carried out. The results obtained confirm the previously arrived conclusion that impurity diffusion occurs by means of the ‘impurity atom – intrinsic point defect’ pairs and that the condition of the local thermodynamic equilibrium between substitutional impurity atoms, nonequilibrium point defects created by irradiation, and the pairs is valid. It is shown that using RED, one can form a special impurity distribution in the semiconductor substrate including retrograde profiles with increasing impurity concentration in the bulk of the semiconductor. In addition, modelling of radiation-induced segregation of nitrogen implanted in stainless steel modified by titanium is carried out. It is shown that vacancy-impurity complexes are responsible for nitrogen diffusion in an implanted layer excluding the ‘tail’ region. The calculations performed give clear evidence in favour of further investigation of various doping processes based on RED, especially the processes of plasma doping, to develop a cheap method for forming specific impurity distributions in the near surface region. © 2016 Informa UK Limited, trading as Taylor & Francis Group.

Bodnar I.V.,Belarusian State University of Informatics and Radioelectronics
Semiconductors | Year: 2012

Single crystals of the CuIn 5S 8 ternary compound are grown by planar crystallization of the melt (the vertical Bridgman method). The composition and structure of the crystals are established. The specific expansion is measured by the dilatometric technique, and the coefficients of thermal expansion are calculated. From the data, the Debye temperatures (Θ D) and the root-mean-square dynamic displacements of atoms (√u -2) in the CuIn 5S 8 compound are calculated. From the transmittance spectra recorded in the region of the fundamental absorption edge in the temperature range 20 to 300 K, the band gap is determined and its temperature dependence is constructed. © 2012 Pleiades Publishing, Ltd.

Bodnar I.V.,Belarusian State University of Informatics and Radioelectronics
Semiconductors | Year: 2012

The transmittance spectra of MnIn 2S 4 and FeIn 2S 4 ternary compounds and Mn xFe 1 - xIn 2S 4 alloys in the fundamental absorption edge region are studied. The samples were grown by planar melt crystallization. From the experimental spectra, the band gaps of the compounds and their alloys are determined, and the concentration dependence of the alloy band gap on the component content is established. It is found that the band gap nonlinearly varies with the composition parameter x and can be described by a quadratic function. © 2012 Pleiades Publishing, Ltd.

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