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Minsk, Belarus

The Belarusian State University of Informatics and Radioelectronics, also known as BSUIR , is a public Higher Education Institution accredited by the Ministry of Education of the Republic of Belarus. Nowadays it is a large educational and scientific complex in Minsk, Belarus. BSUIR was founded on March 15, 1964, and plays a leading role in preparing its students in the fields of computer science, radioelectronics and telecommunications in Belarus. Over 50,000 engineers and 1,000 Ph.D. and Sc.D.s, successfully working in the most science-intensive fields of the Belarus economy, have graduated from the university. BSUIR employs 2academicians and 2 corresponding members of the National Academy of science of Belarus, 301 Professors, and 317 Doctors of Science. Circa 17,000 students are taking courses out of 108 degree and non-degree programs; over 500 are foreign students.The University embracec 10 faculties, 38 chairs; Institute for Professional Development and Retraining of Top Managers and Specialists in Information Technologies and Radioelectronicsing ; R&D Unit. Educational process is supported by:• 27 branches of academic departments at enterprizes;• 176 educational and research labs;• 33 joint educational, research and production labs;• 8 certified educational centres established in cooperation with such world leading companies as Microsoft, IBM, Cisco, National Instruments, INTES, SAP, NVIDIA, Forte Knowledge. Wikipedia.

Velichko O.I.,Belarusian State University of Informatics and Radioelectronics
Philosophical Magazine | Year: 2016

Modelling of radiation-enhanced diffusion (RED) of boron and phosphorus atoms during irradiation of silicon substrates respectively with high- and low-energy protons was carried out. The results obtained confirm the previously arrived conclusion that impurity diffusion occurs by means of the ‘impurity atom – intrinsic point defect’ pairs and that the condition of the local thermodynamic equilibrium between substitutional impurity atoms, nonequilibrium point defects created by irradiation, and the pairs is valid. It is shown that using RED, one can form a special impurity distribution in the semiconductor substrate including retrograde profiles with increasing impurity concentration in the bulk of the semiconductor. In addition, modelling of radiation-induced segregation of nitrogen implanted in stainless steel modified by titanium is carried out. It is shown that vacancy-impurity complexes are responsible for nitrogen diffusion in an implanted layer excluding the ‘tail’ region. The calculations performed give clear evidence in favour of further investigation of various doping processes based on RED, especially the processes of plasma doping, to develop a cheap method for forming specific impurity distributions in the near surface region. © 2016 Informa UK Limited, trading as Taylor & Francis Group.

Bodnar I.V.,Belarusian State University of Informatics and Radioelectronics
Semiconductors | Year: 2012

Single crystals of the CuIn 5S 8 ternary compound are grown by planar crystallization of the melt (the vertical Bridgman method). The composition and structure of the crystals are established. The specific expansion is measured by the dilatometric technique, and the coefficients of thermal expansion are calculated. From the data, the Debye temperatures (Θ D) and the root-mean-square dynamic displacements of atoms (√u -2) in the CuIn 5S 8 compound are calculated. From the transmittance spectra recorded in the region of the fundamental absorption edge in the temperature range 20 to 300 K, the band gap is determined and its temperature dependence is constructed. © 2012 Pleiades Publishing, Ltd.

Bodnar I.V.,Belarusian State University of Informatics and Radioelectronics
Semiconductors | Year: 2012

The transmittance spectra of MnIn 2S 4 and FeIn 2S 4 ternary compounds and Mn xFe 1 - xIn 2S 4 alloys in the fundamental absorption edge region are studied. The samples were grown by planar melt crystallization. From the experimental spectra, the band gaps of the compounds and their alloys are determined, and the concentration dependence of the alloy band gap on the component content is established. It is found that the band gap nonlinearly varies with the composition parameter x and can be described by a quadratic function. © 2012 Pleiades Publishing, Ltd.

Bodnar I.V.,Belarusian State University of Informatics and Radioelectronics
Semiconductors | Year: 2014

The transmittance spectra in the region of the fundamental absorption edge are studied at 80 and 295 K for the single-crystal compounds FeIn2S4 and In2S3 and (FeIn2S4)1 - x(In2S3)x alloys grown by the Bridgman method. From the experimental spectra, the band gap of the FeIn2S4 and In2S3 compounds and (FeIn2S4)1 - x(In2S3)x alloys is determined. The dependence of the band gap on the composition parameter x of the alloy is constructed. It is established that the band gap nonlinearly varies with x and can be described by a quadratic dependence. © 2014 Pleiades Publishing, Ltd.

Klimiankou Y.I.,Belarusian State University of Informatics and Radioelectronics
Programming and Computer Software | Year: 2015

Paging is an important virtual memory mechanism used in advanced operating systems for making illusion of infinite memory. However currently available second-generation microkernels provide only limited, inflexible, and unnatural support for this mechanism. The solutions used in them are implemented at the runtime level, and they incur considerable overheads. These overheads are caused by a large number of switches between different processor modes and thread context switches. The limited support of virtual memory by operating systems based on the second-generation microkernel considerably reduces the attractiveness of their usage. The reason for this is that the computer systems encountered in practice typically use many memory managers simultaneously. This paper proposes a new approach aimed at improving the support of virtual memory for operating systems based on second-generation microkernels. It is based on the implementation of the explicit intrakernel support for runtime environments simultaneously served by multiple memory managers. According to this approach, the virtual address space is divided into multiple regions each of which may be assigned a specific memory manager. This division makes it possible to organize a simple and efficient dispatching of page fault exceptions. Mechanisms for second-generation microkernel are proposed that support runtime environments that are simultaneously served by multiple memory managers. These mechanisms have improved performance and flexibility. The proposed solution is compared with the well-known L4 + L4Re solution in terms of the cost of page fault handling. The proposed solution reduces by a third the overhead due to processor mode and thread context switches compared with the L4 + L4Re approach, which is used in Fiasco.OC based on the modern version of the second-generation microkernel L4/Fiasco. © 2015, Pleiades Publishing, Ltd.

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