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Cao J.,Beijing Solid State Lighting Science and Technology Promotion Center | Zheng C.,Nanchang University | Quan Z.,Nanchang University | Fang F.,Nanchang University | And 2 more authors.
Bandaoti Guangdian/Semiconductor Optoelectronics | Year: 2015

GaN films were grown on Al/Si alloy patterned Si(111) substrate and the influence of the orientation of the mask stripes, as well as the growth conditions, were studied. It was found that when the mask stripes are perpendicular to the Si [11-2] direction, i.e. the GaN [10-10] direction, the GaN films can not coalesce to form a continuous and flat surface. When the mask stripes are parallel to the Si [11-2] direction, i.e. the GaN [10-10] direction, GaN films with flat surface can be obtained. Meanwhile, the results show that high growth temperature and low pressure are favorable to lateral growth. By optimizing the growth condition, continuous and flat GaN films on Si(111) substrate with Al/Si alloy mask were obtained. Atomic force microscopy analysis shows that the dislocation density of the GaN layer grown in the window region is about 1×109/cm2 while that of the laterally grown GaN layer is decreased to less than 5×107/cm2. ©, 2015, China National Publishing Industry Trading Corporation. All right reserved. Source


Cao J.,Beijing Solid State Lighting Science and Technology Promotion Center | Lu X.,Beijing Solid State Lighting Science and Technology Promotion Center | Zhao L.,CAS Institute of Semiconductors | Qu S.,Shandong Inspur Huaguang Optoelectronics Co. | Gao W.,Beijing Solid State Lighting Science and Technology Promotion Center
Journal of Semiconductors | Year: 2015

The initial growth conditions of a 100 nm thick GaN layer and Mg-surfactant on the quality of the GaN epilayer grown on a 6H-SiC substrate by metal-organic vapor phase epitaxy have been investigated in this research. Experimental results have shown that a high V/III ratio and the initially low growth rate of the GaN layer are favorable for two-dimension growth and surface morphology of GaN and the formation of a smoother growth surface. Mg-surfactant occurring during GaN growth can reduce the dislocations density of the GaN epilayer but increase the surface RMS, which are attributed to the change of growth mode. © 2015 Chinese Institute of Electronics. Source

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