Beijing NARI Smartchip Microelectronics Technology Company Ltd

Beijing, China

Beijing NARI Smartchip Microelectronics Technology Company Ltd

Beijing, China
SEARCH FILTERS
Time filter
Source Type

Zhang M.M.,China Electric Power Research Institute | Gao W.,Beijing Nari Smartchip Microelectronics Technology Company Ltd | Xia X.,Beijing Nari Smartchip Microelectronics Technology Company Ltd | Wang F.,Beijing Nari Smartchip Microelectronics Technology Company Ltd
Electronics, Communications and Networks IV - Proceedings of the 4th International Conference on Electronics, Communications and Networks, CECNet2014 | Year: 2015

This paper analyzes the metering safety status of China Southern Power Grid and proves that the establishment of the China Southern Power Grid safety, cost control protection system could guarantee the electricity information data transmission security. It is suggested that a three level key management system according to the power user measurement, automation safety system design and the construction be in line with the application based on the key safety management system. This will ensure the confidentiality of data public network transmission, the security of data storage and the safety and stability of the system operation of the system. © 2015 Taylor & Francis Group, London.


Zhang Y.,Beijing University of Technology | Feng S.,Beijing University of Technology | Zhu H.,Beijing University of Technology | Guo C.,Beijing University of Technology | And 3 more authors.
IEEE Transactions on Electron Devices | Year: 2017

The dynamic behavior of the thermal transport characteristics in the active region of AlGaN/GaN transistors was investigated experimentally. The transient temperature rise, the sectional temperature distribution, and the heat transport characteristics were all measured using the Schottky gate junction voltage characteristics method. The results show that three steps were observed in the transient temperature rise and/or Schottky gate voltage drop curves. The transient temperature rise behavior at different positions in the active region under various power conditions is discussed in detail. In addition, the heat transport delay in the active region of the AlGaN/GaN transistors is also studied. The results indicated that the transport velocity of the heat is 1.47 m/s. This is important when changes occur to the electrical characteristic parameters of the device, because any heat transport-related delay would also induce associated delays in the changes to the electrical characteristic parameters in the AlGaN/GaN transistors. © 2017 IEEE.


Qiao Y.,Beijing University of Technology | Feng S.,Beijing University of Technology | Zhang G.,Beijing Nari Smart Chip Microelectronics Technology Company | Xiong C.,CAS Institute of Semiconductors | And 2 more authors.
IEEE Transactions on Electron Devices | Year: 2014

Thermomechanical cycle failure was analyzed in 808-nm high-power AlGaAs/GaAs laser diode bars (LDBs) in detail. Two thermal stress cycle experiments were carried out in these devices with peak thermal stresses of 19.4 and 33 MPa. The threshold current increase demonstrated a square-root dependence on the cycle number, and a tail and split in lasing spectrum were observed. This result was attributed to nonradiative recombination increasing with cycle number due to the diffusion of defects that accompanies band-structure renormalization. Furthermore, from X-ray diffraction measurements we found that the epitaxial layer remains monocrystalline during thermal stress cycling. We calculated the out-of-plane strain and in-plane stress induced by plastic deformation in the epitaxial layer based on the interplanar spacing in the crystal. Our results suggest that thermomechanical strain and stress were induced by pulsed operation, which led to degradation of the high-power LDBs. © 2014 IEEE.


Liu Y.,Beijing Institute of Technology | Chen K.,Beijing NARI Smartchip Microelectronics Technology Company Ltd
Lecture Notes in Electrical Engineering | Year: 2015

In this paper, we proposed a new method to compress the CSI feedback. When the channel matrix is correlated, the DCT matrix works as a sparsifying basis to transform the channel matrix into a sparse form; the sparse signal is a feedback to the transmitter and reconstructed via the subspace pursuit (SP) recovery algorithm. Both theoretical analyses and simulation results show that the new method can introduce a huge computation cost reduction compared with the OMP algorithm and the codebook-based feedback scheme. © Springer International Publishing Switzerland 2015.


Shi D.,Beijing University of TechnologyBeijing | Feng S.,Beijing University of TechnologyBeijing | Zhang Y.,Beijing University of TechnologyBeijing | Qiao Y.,Beijing Nari Smart Chip Microelectronics Technology Company | Deng B.,Beijing University of TechnologyBeijing
Microelectronics Journal | Year: 2015

Abstract In this paper, the superposition method is used to investigate the complete temperature field of a light-emitting diode (LED) packaging substrate, based on the results of transient temperature rise measurements and the thermal resistance coupling matrix. The feasibility of use of the superposition method in an LED array with multiple packages has been proved first by temperature comparisons with the simultaneous operation of an array (5×5) of 25 high power LEDs mounted on a metal core printed circuit board (MCPCB). Compared with existing approaches, the superposition method will measure the internal temperature of chip directly, accurately and nondestructively. According to the relatively accurate and reliable self-heating and coupling temperature rise data, optimization scheme of LED lamp with multiple packages is proposed. The results show that increasing the heat source separation distance and improving the thermal conductivity of thermal interface materials will reduce the temperature rise and thermal non-uniformity. © 2015 Elsevier Ltd.


Wang B.,Liaoning University | Li Q.,Beijing Nari Smartchip Microelectronics Technology Company Ltd | Zhou H.,Beijing Nari Smartchip Microelectronics Technology Company Ltd
Proceedings - 2013 International Conference on Mechatronic Sciences, Electric Engineering and Computer, MEC 2013 | Year: 2013

In order to be convenient for oil exploration, we need to detect the variation of the pressure, flow, temperature in the oil downhole. When the data is detected, it should be transmitted to the relevant device. The fourth generation mobile communication technology-OFDM (Orthogonal Frequency Division Multiplexing, using ulti-carrier modulation transmission technology) is applied to transmit data, in order to use of spectrum bandwidth more effectively. It is simulated through mathematical software Matlab that the Ultra-low frequency signal pass through the 8 order Bessel (Bessell) low-pass filter, cutoff frequency is 10 Hz. The variation of the signal's phase and amplitude is simulated. Using the group delay flat characteristics of Bessel filter, the signal is received synchronously. The signal (the frequency is 2Hz and 9Hz) is simulated and analyzed concretely in different initial phase. At the same time, 50Hz interference and 1/f noise is filtered out. Finally the feasibility of using 8 order Bessel low pass filter is analyzed. © 2013 IEEE.


Shi D.,Beijing University of Technology | Feng S.,Beijing University of Technology | Qiao Y.,Beijing Nari Smart Chip Microelectronics Technology Company | Wen P.,CAS Suzhou Institute of Nano Technology and Nano Bionics
Solid-State Electronics | Year: 2015

Blue GaN-based laser diodes (LDs) have been characterized by thermal infrared imaging and transient thermal technique to obtain temperature distributions along the optical resonant cavity under continuous-wave (CW) operation. The highest temperature occurred at the emitting facet and the second higher temperature occurred in the other reflecting facet under injection current I = 100 mA with platform temperature of 308.15 K. The results are attributed to the nonradiative recombination in the active region and the reabsorption of laser light inside the cavity. And due to the different of optical flow density, the highest temperature appears in emitting facet. Based on diode forward voltage with temperature, transient thermal technique is used to obtain the temperature distribution along the top-down direction of LDs by the structure function method. The thermal resistance from chip to case is 47.3 K/W. The chip's thermal resistance is the main contribution. © 2015 Elsevier Ltd. All rights reserved.


Gong X.,Beijing University of Technology | Feng S.,Beijing University of Technology | Yang H.,Hebei Semiconductor Research Institute | An Z.,Hebei Semiconductor Research Institute | Qiao Y.,Beijing Nari Smart Chip Microelectronics Technology Co.
IEEE Transactions on Device and Materials Reliability | Year: 2015

The facet coating of GaAs-based laser diodes (LDs) stressed by constant current was studied in detail using focused ion beam, high-resolution transmission electron microscopy, and energy-dispersive X-ray spectroscopy techniques. Our analysis found that, for Si/Al 2O 3 facet coating, silicon near the active area exposed to high laser intensity becomes diffused, making it thicker than the Si layer outside the active area. Oxygen diffused into the Si layer and the Si layer got oxidized. Such change of facet-coating thickness and composition causes the facet reflectivity to fluctuate and carriers to recombine nonradioactively and eventually lead to catastrophic optical damage. We conclude that the performance of LDs could be improved by optimizing their facet coating. © 2001-2011 IEEE.


Qiao Y.-B.,Beijing Nari Smart Chip Microelectronics Technology Company | Chen Y.-N.,Beijing Nari Smart Chip Microelectronics Technology Company | Zhao D.-Y.,Beijing Nari Smart Chip Microelectronics Technology Company | Zhang H.-F.,Beijing Nari Smart Chip Microelectronics Technology Company
Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves | Year: 2015

The thermal crosstalk characteristics in high-power 808 nm AlGaAs/GaAs laser diode bar were investigated experimentally and theoretically using infrared thermography and finite element method. We have performed the steady-state and transient analysis. A detailed profile of thermal crosstalk in laser diode bar was presented in this paper. The steady-state temperature rise has a logarithmical dependence on the total operation current, and the thermal crosstalk between emitters increases with the current density. Furthermore, the transient thermal analysis suggested that the thermal crosstalk occurred mainly in chip. Using thermal resistance parallel connection model, we explained the phenomena that the time constant of chip decreased with the increase of total operation current. ©, 2015, Chinese Optical Society. All right reserved.

Loading Beijing NARI Smartchip Microelectronics Technology Company Ltd collaborators
Loading Beijing NARI Smartchip Microelectronics Technology Company Ltd collaborators