Baoding Tianwei Solarfilms Co.

Baoding, China

Baoding Tianwei Solarfilms Co.

Baoding, China
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Pan Q.,China Institute of Technology | Wang T.,Beijing University of Technology | Yan H.,Beijing University of Technology | Zhang M.,Beijing University of Technology | Mai Y.,Baoding Tianwei Solar films Co.
Brazilian Journal of Physics | Year: 2017

Crystallization of glass/Aluminum (50, 100, 200 nm) /hydrogenated amorphous silicon (a-Si:H) (50, 100, 200 nm) samples by Aluminum-induced crystallization (AIC) is investigated in this article. After annealing and wet etching, we found that the continuity of the polycrystalline silicon (poly-Si) thin films was strongly dependent on the double layer thicknesses. Increasing the a-Si:H/Al layer thickness ratio would improve the film microcosmic continuity. However, too thick Si layer might cause convex or peeling off during annealing. Scanning electron microscopy (SEM) and Energy Dispersive X-ray spectroscopy (EDX) are introduced to analyze the process of the peeling off. When the thickness ratio of a-Si:H/Al layer is around 1 to 1.5 and a-Si:H layer is less than 200 nm, the poly-Si film has a good continuity. Hall measurements are introduced to determine the electrical properties. Raman spectroscopy and X-ray diffraction (XRD) results show that the poly-Si film is completely crystallized and has a preferential (111) orientation. © 2017, Sociedade Brasileira de Física.


Chen T.,Zhejiang University | Chen T.,Jülich Research Center | Huang Y.,Jülich Research Center | Huang Y.,Baoding Tianwei Solarfilms Co. | And 3 more authors.
Physica Status Solidi - Rapid Research Letters | Year: 2010

Microcrystalline silicon carbide (μc-SiC:H) window layers prepared by Hot-Wire Chemical Vapor Deposition (HWCVD) were applied in thin film silicon solar cells with microcrystal-line silicon (μc-Si:H) absorber layers. The intrinsic μc-Si:H absorber was prepared by HWCVD or Plasma Enhanced Chemical Vapor Deposition (PECVD) over a wide range of crystalline volume fractions. With both types of absorber layers high solar cell short circuit current densities (jSC) can be obtained due to the highly transparent μc-SiC:H window layer and better optical matching. Using the μc-Si:H absorber prepared by HWCVD yields an additional improvement in the open circuit voltage (VOC) of about 20 mV. A 1 μm thick μc-Si:H cell was obtained with VOC = 549 mV and jSC = 25.6 mA/cm2 resulting in an efficiency of 9.2%. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.


Chen T.,Jülich Research Center | Kohler F.,Jülich Research Center | Heidt A.,Jülich Research Center | Huang Y.,Jülich Research Center | And 3 more authors.
Thin Solid Films | Year: 2011

An overview on microstructural and electronic properties of stoichiometric microcrystalline silicon carbide (μc-SiC) prepared by Hot-Wire Chemical Vapor Deposition (HWCVD) at low substrate temperatures will be given. The electronic properties are strongly dependent on crystalline phase, local bonding, strain, defects, impurities, etc. Therefore these quantities need to be carefully investigated in order to evaluate their influence and to develop strategies for material improvement. We will particularly address the validity of different experimental methods like Raman spectroscopy and IR spectroscopy to provide information on the crystalline volume fraction by comparing the results with Transmission Electron Microscopy (TEM) and X-Ray diffraction data. Finally the electronic properties as derived from optical absorption and transport measurements will be related to the microstructure. © 2011 Elsevier B.V. All rights reserved.


Wan M.,Hunan Institute of Humanities, Science and Technology | Zhu H.,Baoding Tianwei Solarfilms Co. | Guo J.,Hunan Institute of Humanities, Science and Technology | Peng Y.,Hunan Institute of Humanities, Science and Technology | And 3 more authors.
Synthetic Metals | Year: 2013

A new polymer (TPAFCN, one of fumaronitrile derivates) was synthesized and applied as the acceptor in bulk heterojunction polymer solar cells (PSCs) with MEH-PPV as donor. Different blends with different MEH-PPV/TAPFCN weight ratios were employed in PSCs. It is found that photoinduced charges transfer in the mixtures of MEH-PPV and TPAFCN, identifying from completely quenched fluorescent of MEH-PPV. The TPAFCN could be beneficial to the enhancement of open circuit voltage (VOC) as well as the resulting PCE. A high VOC of about 1.0 V is achieved by the PSCs with the optimal MEH-PPV/TPAFCN of 1:3 under illumination with 80 mW/cm2 of AM 1.5 white light. © 2013 Published by Elsevier B.V. All rights reserved.


Wang T.,Beijing University of Technology | Wang T.,Baoding Tianwei Solar Films Co. | Yan H.,Beijing University of Technology | Zhang M.,Beijing University of Technology | And 6 more authors.
Applied Surface Science | Year: 2013

Polycrystalline silicon (Poly-Si) thin films were successfully fabricated on soda-lime glass substrate by aluminum induced crystallization (AIC) process. In order to analyze non-uniform film by AIC, a new method to evaluate the poly-Si thin film average crystalline volume fraction is proposed, based on the optical microscope and Raman spectroscopy results. This method can obtain more accurate crystallization fraction than the common way. X-ray diffraction results showed that the films are strongly (1 1 1) orientated. A new region crystallization pattern in AIC was also proposed. © 2012 Elsevier B.V. All rights reserved.


Jia H.,Japan National Institute of Advanced Industrial Science and Technology | Jia H.,Baoding TianWei SolarFilms Co. | Kondo M.,Japan National Institute of Advanced Industrial Science and Technology
Materials Research Society Symposium Proceedings | Year: 2010

A multi-pressure microwave plasma source is developed and is applied for the fast deposition of crystalline silicon films. In this paper, the plasma source is diagnosed firstly. Electron density, electron temperature and discharge gas temperature of the plasmas generated in ambient air are studied using optical emission spectroscopy (OES) method. By using the high density microwave plasma source, depositions of crystalline silicon films from SiH 4+He mixture at reduced pressure conditions are investigated systematically. After optimizing the film deposition conditions, highly crystallized Si films are deposited at a rate higher than 700 nm/s. We also find that the deposited films are fully crystallized and crystalline structure of the deposited film evolves along the film growth direction, i.e. large grains in surface region while small grains in the bottom region of the film. Based on the observed results, a possible mechanism, the annealing-assisted plasma-enhanced chemical vapor deposition, is proposed to describe the film growth process. © 2010 Materials Research Society.


Yin J.,Baoding Tianwei Solarfilms Co. | Zhu H.,Baoding Tianwei Solarfilms Co. | Wang Y.,Baoding Tianwei Solarfilms Co. | Wang Z.,Baoding Tianwei Solarfilms Co. | And 5 more authors.
Applied Surface Science | Year: 2012

Boron doped zinc oxide (ZnO:B) films with different thicknesses were prepared with low pressure chemical vapor deposition (LPCVD) technique and implemented in thin film silicon solar cells as front and back electrodes. It is found that thick back ZnO:B film electrode in thin film silicon solar cells leads to a high fill factors (FF), which is attributed to an improvement of the electrical properties of the thick ZnO:B films, and in the meanwhile a slightly low short circuit currents (J sc) due to a high light absorption in the thick back ZnO:B films. Differently, the thicker front ZnO:B film electrodes result in a high J sc but a low FF of solar cells compared to the thinner ones. The low FF of the solar cells may be caused by the local shunt originated from the pinholes or by the cracks (zones of non-dense material) formed in particular in microcrystalline silicon materials deposited on rough front ZnO:B films. As to the high J sc, it is expected to be due to a good light trapping effect inside solar cells grown on rough front ZnO:B films. Moreover, the application of high reflective polyvinyl butyral (PVB) foils effectively enhances the utilization of incident light in solar cells. By optimizing deposition process of the ZnO:B films, high efficiencies of 8.8% and 10% for single junction thin film amorphous silicon solar cells (a-Si:H, intrinsic layer thickness < 200 nm) and amorphous/microcrystalline silicon tandem solar cells (a-Si:H/μc-Si:H, intrinsic amorphous silicon layer thickness < 220 nm), respectively, are achieved. © 2012 Elsevier B.V.


Zhu H.,Baoding Tianwei Solarfilms Co. | Mai Y.,Baoding Tianwei Solarfilms Co. | Wan M.,Hunan Institute of Humanities, Science and Technology | Gao J.,Baoding Tianwei Solarfilms Co. | And 8 more authors.
Thin Solid Films | Year: 2013

In this study, the reflection properties of transparent conductive oxide (TCO) films i.e. aluminum doped zinc oxide (ZnO:Al) and boron doped zinc oxide (ZnO:B) films plus aluminum (Al) films or white polyvinyl butyral (PVB) foils, which are usually used as the combined back reflectors of thin film silicon solar cells, are investigated. Sputtered ZnO:Al films were etched in diluted hydrochloric acid (1%) to achieve rough surface structures while textured ZnO:B films were directly prepared by a low pressure chemical vapor deposition technique. It is found that the rough TCO/Al reflectors show a low total reflection, which is mainly due to the parasitic absorption by the surface plasmons at the rough TCO/Al interfaces as well as the absorption in the TCO films. Differently, the rough TCO/white PVB foil reflectors display a slightly high light reflection regardless of the influence of the rough interface without the excitation of surface plasmons. Thus, the TCO/white PVB foil back reflectors could be a good candidate with respect to light utilization when they are applied in thin film silicon solar cells. © 2013 Elsevier B.V. All rights reserved.


Teng Y.-C.,Southwest University of Science and Technology | Li Y.-X.,Southwest University of Science and Technology | Xu H.-J.,Baoding Tianwei Solarfilms Co. | Ren X.-T.,Southwest University of Science and Technology
Yuanzineng Kexue Jishu/Atomic Energy Science and Technology | Year: 2010

The synroc form of compounding minerals of zirconolite and sphene doped neodymium was prepared by using zircon, calcium carbonate, titanium dioxide, alumina, neodymium oxide as raw materials and solid phase reaction. The chemical durability of synroc form was researched by means of X-ray diffraction (XRD), backscattering scanning electron microscopy (BSE), energy dispersive spectroscopy (EDS), fluorescence spectrum (FS) and so on. The results indicate that the compounding minerals of zirconolite and sphene can dissolve commendably neodymium, and its synroc form has a good chemical durability. The unitary average leaching rates of neodymium of sample CZ15-1260, CZA15-1260 and CA15-1260 are 1.82×10-4, 1.38×10-4, 1.48×10-4 g·m-2·d-1, respectively at 90 °C, the 42nd day. The better sintering temperature of synroc form is 1 260 °C.


Zhu H.,Baoding Tianwei Solarfilms Co. | Jia H.,Baoding Tianwei Solarfilms Co. | Liu D.,Baoding Tianwei Solarfilms Co. | Feng Y.,Baoding Tianwei Solarfilms Co. | And 8 more authors.
Applied Surface Science | Year: 2012

Zinc oxide thin films with different boron doping levels (ZnO:B) are prepared by low pressure chemical vapor deposition (LPCVD) technique. All films here exhibit a pyramid-like surface texture. Stability of the ZnO:B films is systematically investigated through a post heat treatment at ambient temperatures of 300°C and 250°C for different durations. It is found that total transmission (TT) of these films at near infrared (NIR) wavelength range increases with the enhanced thermal treating intensity, which could be attributed to decrease of free carrier concentration inside the films. Moreover, light absorption in NIR wavelength range decreases profoundly with the increasing carrier concentration after a post thermal treatment in particular for highly doped ZnO:B films. However, morphology of these ZnO:B films does not vary after the thermal treatment and thus the corresponding light scattering properties do not change as well. Therefore, the thermally treated ZnO:B films may lead to an increase in light-generated current and resulting a higher cell efficiency due to the enhancement of TT when they work as front contact in silicon thin film solar cells. © 2012 Elsevier B.V. All rights reserved.

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