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Teng Y.-C.,Southwest University of Science and Technology | Li Y.-X.,Southwest University of Science and Technology | Xu H.-J.,Baoding Tianwei Solarfilms Co. | Ren X.-T.,Southwest University of Science and Technology
Yuanzineng Kexue Jishu/Atomic Energy Science and Technology | Year: 2010

The synroc form of compounding minerals of zirconolite and sphene doped neodymium was prepared by using zircon, calcium carbonate, titanium dioxide, alumina, neodymium oxide as raw materials and solid phase reaction. The chemical durability of synroc form was researched by means of X-ray diffraction (XRD), backscattering scanning electron microscopy (BSE), energy dispersive spectroscopy (EDS), fluorescence spectrum (FS) and so on. The results indicate that the compounding minerals of zirconolite and sphene can dissolve commendably neodymium, and its synroc form has a good chemical durability. The unitary average leaching rates of neodymium of sample CZ15-1260, CZA15-1260 and CA15-1260 are 1.82×10-4, 1.38×10-4, 1.48×10-4 g·m-2·d-1, respectively at 90 °C, the 42nd day. The better sintering temperature of synroc form is 1 260 °C.

Jia H.,Japan National Institute of Advanced Industrial Science and Technology | Jia H.,Baoding Tianwei Solarfilms Co. | Kondo M.,Japan National Institute of Advanced Industrial Science and Technology
Materials Research Society Symposium Proceedings | Year: 2010

A multi-pressure microwave plasma source is developed and is applied for the fast deposition of crystalline silicon films. In this paper, the plasma source is diagnosed firstly. Electron density, electron temperature and discharge gas temperature of the plasmas generated in ambient air are studied using optical emission spectroscopy (OES) method. By using the high density microwave plasma source, depositions of crystalline silicon films from SiH 4+He mixture at reduced pressure conditions are investigated systematically. After optimizing the film deposition conditions, highly crystallized Si films are deposited at a rate higher than 700 nm/s. We also find that the deposited films are fully crystallized and crystalline structure of the deposited film evolves along the film growth direction, i.e. large grains in surface region while small grains in the bottom region of the film. Based on the observed results, a possible mechanism, the annealing-assisted plasma-enhanced chemical vapor deposition, is proposed to describe the film growth process. © 2010 Materials Research Society.

Wan M.,Hunan Institute of Humanities, Science and Technology | Zhu H.,Baoding Tianwei Solarfilms Co. | Guo J.,Hunan Institute of Humanities, Science and Technology | Peng Y.,Hunan Institute of Humanities, Science and Technology | And 3 more authors.
Synthetic Metals | Year: 2013

A new polymer (TPAFCN, one of fumaronitrile derivates) was synthesized and applied as the acceptor in bulk heterojunction polymer solar cells (PSCs) with MEH-PPV as donor. Different blends with different MEH-PPV/TAPFCN weight ratios were employed in PSCs. It is found that photoinduced charges transfer in the mixtures of MEH-PPV and TPAFCN, identifying from completely quenched fluorescent of MEH-PPV. The TPAFCN could be beneficial to the enhancement of open circuit voltage (VOC) as well as the resulting PCE. A high VOC of about 1.0 V is achieved by the PSCs with the optimal MEH-PPV/TPAFCN of 1:3 under illumination with 80 mW/cm2 of AM 1.5 white light. © 2013 Published by Elsevier B.V. All rights reserved.

Chen T.,Julich Research Center | Kohler F.,Julich Research Center | Heidt A.,Julich Research Center | Huang Y.,Julich Research Center | And 3 more authors.
Thin Solid Films | Year: 2011

An overview on microstructural and electronic properties of stoichiometric microcrystalline silicon carbide (μc-SiC) prepared by Hot-Wire Chemical Vapor Deposition (HWCVD) at low substrate temperatures will be given. The electronic properties are strongly dependent on crystalline phase, local bonding, strain, defects, impurities, etc. Therefore these quantities need to be carefully investigated in order to evaluate their influence and to develop strategies for material improvement. We will particularly address the validity of different experimental methods like Raman spectroscopy and IR spectroscopy to provide information on the crystalline volume fraction by comparing the results with Transmission Electron Microscopy (TEM) and X-Ray diffraction data. Finally the electronic properties as derived from optical absorption and transport measurements will be related to the microstructure. © 2011 Elsevier B.V. All rights reserved.

Chen T.,Zhejiang University | Chen T.,Julich Research Center | Huang Y.,Julich Research Center | Huang Y.,Baoding Tianwei Solarfilms Co. | And 3 more authors.
Physica Status Solidi - Rapid Research Letters | Year: 2010

Microcrystalline silicon carbide (μc-SiC:H) window layers prepared by Hot-Wire Chemical Vapor Deposition (HWCVD) were applied in thin film silicon solar cells with microcrystal-line silicon (μc-Si:H) absorber layers. The intrinsic μc-Si:H absorber was prepared by HWCVD or Plasma Enhanced Chemical Vapor Deposition (PECVD) over a wide range of crystalline volume fractions. With both types of absorber layers high solar cell short circuit current densities (jSC) can be obtained due to the highly transparent μc-SiC:H window layer and better optical matching. Using the μc-Si:H absorber prepared by HWCVD yields an additional improvement in the open circuit voltage (VOC) of about 20 mV. A 1 μm thick μc-Si:H cell was obtained with VOC = 549 mV and jSC = 25.6 mA/cm2 resulting in an efficiency of 9.2%. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

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