AZUR Space Solar Power GmbH

Heilbronn, Germany

AZUR Space Solar Power GmbH

Heilbronn, Germany
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Patent
AZUR Space Solar Power GmbH | Date: 2016-09-19

A scalable voltage source having a number N of partial voltage sources implemented as semiconductor diodes connected to one another in series, wherein each of the partial voltage sources has a semiconductor diode with a p-n junction. A tunnel diode is formed between sequential pairs of partial voltage sources, wherein the tunnel diode has multiple semiconductor layers with a larger band gap than the band gap of the p/n absorption layers and the semiconductor layers with the larger band gap are each made of a material with modified stoichiometry and/or a different elemental composition than the p/n absorption layers of the semiconductor diode. The partial voltage sources and the tunnel diodes are monolithically integrated together, and jointly form a first stack with a top and a bottom, and the number N of partial voltage sources is greater than or equal to two.


Patent
AZUR Space Solar Power GmbH | Date: 2016-12-23

A multi-junction solar cell having at least three partial cells having an emitter and a base. The first partial cell comprises a first layer of a compound containing at least the elements GaInP, and the energy band gap of the first layer is greater than 1.75 eV, and wherein the second partial cell has a second layer of a compound having at least the elements GaAs and the lattice constant of the second layer is in the range between 5.635 and 5.675 , and wherein the third partial cell has a third layer of a compound having at least the elements GaInAs and the energy band gap of the third layer is smaller than 1.25 eV and the lattice constant of the third layer is greater than 5.700 .


Patent
AZUR Space Solar Power GmbH | Date: 2016-12-12

A stacked multi-junction solar cell having a first subcell and second subcell, the second subcell having a larger band gap than the first subcell. A third subcell has a larger band gap than the second subcell, and each of the subcells include an emitter and a base. The second subcell has a layer which includes a compound formed at least the elements GaInAsP, and a thickness of the layer is greater than 100 nm, and the layer is formed as part of the emitter and/or as part of the base and/or as part of the space-charge zone situated between the emitter and the base. The third subcell has a layer including a compound formed of at least the elements GaInP, and the thickness of the layer is greater than 100 nm.


Patent
AZUR Space Solar Power GmbH | Date: 2017-04-12

The invention relates to an epitaxial group-III-nitride buffer-layer structure (100) an a heterosubstrate, wherein the buffer-layer structure (100) comprises at least one stress-management layer sequence S including an interlayer structure (530) arranged between and adjacent to a first and a second group-III-nitride layer (120, 140), wherein the interlayer structure (530) comprises a group-III-nitride interlayer material having a larger band gap than the materials of the first and second group-III-nitride layers (120, 140), and wherein a p-type-dopant-concentration profile drops, starting from at least 1 x 10^(18) cm^(-3), by at least a factor of two in transition from the interlayer structure (530) to the first and second group-nitride layers (120, 140).


Patent
AZUR Space Solar Power GmbH | Date: 2016-09-13

A multi-junction solar cell having a first subcell made of an InGaAs compound. The first subcell has a first lattice constant and A second subcell has a second lattice constant. The first lattice constant is at least 0.008 greater than the second lattice constant. A metamorphic buffer is formed between the first subcell and the second subcell and has a sequence of at least three layers and a lattice constant increases from layer to layer in the sequence in the direction toward the first subcell. The lattice constants of the layers of the buffer are greater than the second lattice constant, and a layer of the metamorphic buffer has a third lattice constant that is greater than the first lattice constant. A number N of compensation layers for compensating the residual stress of the metamorphic buffer is formed between the metamorphic buffer and the first subcell.


Patent
AZUR Space Solar Power GmbH | Date: 2016-01-05

A monolithic multiple solar cell includes at least three partial cells, with a semiconductor mirror placed between two partial cells. The aim of the invention is to improve the radiation stability of said solar cell. For this purpose, the semiconductor mirror has a high degree of reflection in at least one part of a spectral absorption area of the partial cell which is arranged above the semiconductor mirror and a high degree of transmission within the spectral absorption range of the partial cell arranged below the semiconductor mirror.


Patent
AZUR Space Solar Power GmbH | Date: 2016-01-05

A monolithic multiple solar cell includes at least three partial cells, with a semiconductor mirror placed between two partial cells. The aim of the invention is to improve the radiation stability of said solar cell. For this purpose, the semiconductor mirror has a high degree of reflection in at least one part of a spectral absorption area of the partial cell which is arranged above the semiconductor mirror and a high degree of transmission within the spectral absorption range of the partial cell arranged below the semiconductor mirror.


Patent
AZUR Space Solar Power GmbH | Date: 2016-01-05

A monolithic multiple solar cell includes at least three partial cells, with a semiconductor mirror placed between two partial cells. The aim of the invention is to improve the radiation stability of said solar cell. For this purpose, the semiconductor mirror has a high degree of reflection in at least one part of a spectral absorption area of the partial cell which is arranged above the semiconductor mirror and a high degree of transmission within the spectral absorption range of the partial cell arranged below the semiconductor mirror.


Grant
Agency: European Commission | Branch: H2020 | Program: RIA | Phase: COMPET-03-2015 | Award Amount: 997.47K | Year: 2016

Solar cells are the preferred method for powering todays satellites. The cell efficiency determines the available power and is hence of exceptional importance for any spacecraft equipment or system. Besides the efficiency that is directly linked to the solar array power (W/m2), solar cells define also further Key Performance Indicators such as specific mass (kg/m2) and manufacturing costs (EUR/W). The SiLaSpaCe proposal will address these needs by developing next generation, high performance, GaInP/GaInAs/Ge multi-junction space solar cells with reduced weight, high radiation stability and increased efficiency. This ambitious goal will be achieved by the introduction (spinning-in) of Si photovoltaic technologies which are absolutely new for space applications and which will lead to a disruptive development. These measures will furthermore allow the introduction of thinner Ge wafers and metamorphic top structures leading to increased efficiency and to reduced weight bringing GaInP/GaInAs/Ge multi-junction space solar cells significantly beyond the state-of the art which are lattice-matched GaInP/GaInAs/Ge triple-junction solar cells with a Beginning-of-Life (BOL) efficiency of 30%. In the SiLaSpaCe project GaInP/GaInAs/Ge multi-junction space solar cells shall reach a BOL efficiency of 33%. The proposal relates clearly to the EU call topic H2020-LEIT-Space-Competitiveness of the European Space Sector-2015. Its main objective is to preserve European independence and competitiveness in the space market by incorporating and developing a brand-new space solar cell technology. The proposals ambitious developments will enhance new and key enabling technologies (KET) like energy production, materials and structures as well as additive layer manufacturing techniques. Finally the proposal will attract terrestrial technologies to space systems and mobilises the new incorporation of non-space actors into the space landscape.


Grant
Agency: European Commission | Branch: H2020 | Program: RIA | Phase: LCE-02-2014 | Award Amount: 4.95M | Year: 2015

It has been proven that the only realistic path to close the gap between theoretical and practical ultra-high efficiency solar cells is the monolithic multi-junction (MJ) approach, i.e. to stack different materials on top of each other. Each material/sub solar cell converts a specific part of the suns spectrum and thus manages the photons properly. However, large area multi-junction cells are too expensive if applied in standard PV modules. A viable solution to solve the cost issue is to use tiny solar cells in combination with optical concentrating technology, in particular, high concentrating photovoltaics (HCPV), in which the light is concentrated over the solar cells more than 500 times. The combination of ultra-high efficient cells and optical concentration lead to low cost on system level and eventually to low levelised electricity costs, today well below 8 cent/kWh and at the end of this project below 5 cent/kWh. Therefore, to achieve an optimised PV system (high efficiency, low cost and low environmental impact), world-wide well-known partners in the field of CPV technology propose this project to run and progress together the development of highly-efficient MJ solar cells and the improvement of the concentrator (CPV module) technique. The central objective of the project is to realise HCPV solar cells and modules working at a concentration level 800x with world record efficiency of 48 % and 40 %, respectively, hence bringing practical performances closer to theoretical limits. This should be achieved through novel MJ solar cell architectures using advanced materials and processes for better spectral matching as well as through innovative HCPV module concepts with improved optical and interconnection designs, thus including novel light management approaches. The ambition for this project is not less than to achieve the highest efficiencies on solar cell and module level world-wide, thus Europe will be the top player for the CPV-technology.

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