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Chen F.,China Airborne Missile Academy | Su X.,China Airborne Missile Academy | Su X.,Aviation Key Laboratory of Science and Technology on Infrared Detector | Ma S.,China Airborne Missile Academy | And 2 more authors.
Journal of Applied Optics | Year: 2015

Mid-wave(MW) antireflective films were coated on double-side polished Ge substrate, and the films were experimented in hygrothermal environment for sustaining 24 h, 2×24 h, 3×24 h, 4×24 h, 5×24 h, 7×24 h, …, 12×24 h, respectively. The effects of hygrothermal environment on the reliability including transmittance and adhesion of Ge-based MW antireflective films were studied.The results indicate that, the transmittance of MW antireflective films becomes lower gradually after sustained in the hygrothermal environment, and the absorption peak of CO2 and H2O turnes up, resulted from the increase of the content of CO2 and H2O in the films sustained under hygrothermal environment for enough time; The fringe of film becomes desquamated after 10×24 h in hygrothermal environment, and from that time, the average transmittance is lower than 85%. ©, 2015, The No. 205 Research Institute of China Ordnance Industry. All right reserved.


Chen F.,China Airborne Missile Academy | Su X.,China Airborne Missile Academy | Su X.,Aviation Key Laboratory of Science and Technology on Infrared Detector | Si J.,China Airborne Missile Academy | And 3 more authors.
Bandaoti Guangdian/Semiconductor Optoelectronics | Year: 2014

The principles and calculation methods of the process capability index (Cpk) were introduced. Based on statistical analysis on the cutoff wavelength of a certain bandpass filter, the Cpk of the thin film filter was calculated to be 1.0~1.33 from the distribution of the points of 5% transmittance. The methods for increasing the Cpk of the thin film filter deposition are put forward, such as reducing the relative standard deviationsδ, optimizing the technological conditions, reducing the deviation of the technological parameters between the distribution center central μand the standard central value T0. ©, 2014, Editorial Office of Semiconductor Optoelectronics. All right reserved.


Hou Z.-J.,China Airborne Missile Academy | Hou Z.-J.,Aviation Key Laboratory of Science and Technology on Infrared Detector | Si J.-J.,China Airborne Missile Academy | Si J.-J.,Aviation Key Laboratory of Science and Technology on Infrared Detector | And 8 more authors.
Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves | Year: 2014

The background output of the PbS detector is determined by the ratio of the resistance of the detector to that of the reference at the input of the readout circuit. The performance of 1×128 linear photoconductive (PC) PbS infrared focal plane arrays (IRFPAs) was improved by tuning the resistance of the detector with laser. The background out-put of IRFPAs is reduced by tuning the resistance of the detector. As a result, the average responsivity and detectivity of the detector is increased from 4.45×106 V/W to 8.82×106 V/W, and 6.52×109 cm·Hz1/2·W-1 to 1×1010 cm· Hz1/2·W-1, respectively. The dynamic range is also increased from 46 dB to 52 dB.


Shen X.,China Airborne Missile Academy | Lv Y.,China Airborne Missile Academy | Lv Y.,Aviation Key Laboratory of Science and Technology on Infrared Detector | Liu W.,China Airborne Missile Academy | And 3 more authors.
Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering | Year: 2014

With the development of InSb large-scale Infrared Focal Plane Arrays (IRFPA), wet etching process has not met the new technological requirement of IRFPA. A novel wet etching process was expatiated with suitable ratio citric acid/H2O2 as etchant instead of lactic acid/nitric acid in being and assistant etching facility using N2 agitation. The results from comparison and analysis of the experiment clearly indicate that the surface morphology etched by new process, compared with the conventional process, has less lateral etching and mesa trench, more surface uniformity and lower roughness. Otherwise, the electrical properties is improved with lower leak current.


Hou Z.,China Airborne Missile Academy | Hou Z.,Aviation Key Laboratory of Science and Technology on Infrared Detector | Si J.,China Airborne Missile Academy | Si J.,Aviation Key Laboratory of Science and Technology on Infrared Detector | And 7 more authors.
Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering | Year: 2014

Resistance selection of blind element used in linear photoconductive (PC) PbS detector for counteracting background current was analyzed. It was found that the blind element resistance can be chosen to be same as, or to be a fixed ratio to that of relevant sensitive element. And the ratio should be equal with ratio of biases applied to blind element and relevant detector. Two linear PC 1 ×128 PbS infrared focal plane array (IRFPA) detectors, with sensitive element size of 100 μm ×100 μm, and blind element size of 100 μm ×100 μm and 200 μm ×50 μm, were fabricated and their performance were tested by IRFPA test system. Results show that when the working condition satisfied average responsivity and average detectivety are same for using different blind elements. Results validate the feasibility that background output uniformity improvement of IRFPAs by tuning the resistance of blind element.


Yao G.,China Airborne Missile Academy | Yao G.,Aviation Key Laboratory of Science and Technology on Infrared Detector | Zhang L.,China Airborne Missile Academy | Zhang L.,Northwestern Polytechnical University | And 3 more authors.
Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering | Year: 2015

Dry etching and wet etching were usually used in the mesa etching process of InAs/GaSb SLs. Three kinds of etch atmosphere (Cl2 based, Ar based and CH4 based)were studied in inductively coupled plasma (ICP) dry etching. The results show that the CH4 based atmosphere give much more smooth surface and less etch pits according to the SEM measurement. Then wet etching was introduced to eliminate the etching damage of ICP dry etching, tartaric acid based etchant and phosphoric acid based etchant, were studied. It was found that the phosphoric acid based etchant gave better result to remove etching damage, and provide a more stable etching rate. InAs/GaSb SLs photodiodes by standard photolithographic procedures were fabricated using this etching recipe. The diodes exhibits a high breakdown voltage and low leakage current, the measurement result reveals a dynamic impedance values of R0A =1.98×104 Ωcm2 at 77 K. ©, 2015, Chinese Society of Astronautics. All right reserved.


Chen F.,China Airborne Missile Academy | Si J.,China Airborne Missile Academy | Si J.,Aviation Key Laboratory of Science and Technology on Infrared Detector | Shi Z.,China Airborne Missile Academy
Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering | Year: 2015

New requirements on the reliability of the detector are put forward for the application of infrared detector in some special environment. In order to study the effect of hygrothermal environment on PbS detector performance, the PbS films had been prepared by CMD, surface morphology of the PbS films were showed, performance and experiment between dry and hygrothermal environment were specified. The influence of Rd, Vs, Vn and D* between dry and hygrothermal environment were analyzed. The Rd of PbS photoconductive detectors had been incresed in hygrothermal environment and decresed in dry environment. The varieties of Rd was reversible between dry and hygrothermal environment, for the resistance of the PbS particles R0 and ΔR that had produced from the absorption of H2O in hygrothermal environment were constituted an equivalent series resistance, and ΔR changed with PbS detector in dry and hygrothermal environment, to form a kind of similar to the adjustable state variable resistance. The trend of Vn variety between dry and hygrothermal environment is same to that of the Rd, and on the opposition that of the D*. © 2015, Editorial Board of Journal of Infrared and Laser Engineering. All right reserved.


Wang Y.,China Airborne Missile Academy | Lu X.,China Airborne Missile Academy | Meng C.,China Airborne Missile Academy | Meng C.,Aviation Key Laboratory of Science and Technology on Infrared Detector | And 9 more authors.
Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering | Year: 2015

The cooled InSb infrared focal plane array(IRFPA) detectors should work in the temperature as low as 80 K. As a result, detectors are commonly subjected to thousands of thermal cycle from 80 K to room temperature(300 K) in the entire life cycle. Thermal cycle characteristic of the InSb IRFPA detector was studied. The FPA photoelectric parameter, Dewar heat load and J-T cooling characteristics were analyzed. The results indicated that the maximal fluctuation of the detectivity was 5.5%, the maximal fluctuation of the responsivity was 4.8%, and the number of dead pixels did not increase. The experimental results exhibited that the detectors could undergo at least 2 000 thermal cycles, which provides reference for the research and improvement of detector fabrication. © 2015, Editorial Board of Journal of Infrared and Laser Engineering. All right reserved.


Zhang L.-X.,Northwestern Polytechnical University | Zhang L.-X.,Aviation Key Laboratory of Science and Technology on Infrared Detector | Sun W.-G.,Northwestern Polytechnical University | Sun W.-G.,Aviation Key Laboratory of Science and Technology on Infrared Detector | And 5 more authors.
Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves | Year: 2014

Several etching methods for mesa of InAs/GaSb superlattice in IR FPA were investigated. The InAs/GaSb superlattices used here were prepared by molecular beam epitaxy. A standard PIN device structure was applied in all samples with a period of 8ML InAs/8ML GaSb. Inductively coupled plasma etching with CH4, Cl2 and Ar as reactive gases and wet etching with solution including orthophosphoric acid and tartaric acid were compared. The mesa height was measured by α-step meter system, while surface morphology was evaluated by microscope and scanning electron microscopy. The results shows that CH4 based etching can give a smooth surface and slippery lateral with an 80 degree angle. Furthermore, the mesa depth was easy to control. This method is suitable for fabricating deep mesa device. It has also been found that etching with the solution based on orthophosphoric acid can obtain a smoother, clear surface and low in the longitudinal. It is a better way to fabricate IR FPA. ©, 2014, Science Press. All right reserved.


Chen F.,Luoyang Optoelectro Technology Development Center | Si J.,Luoyang Optoelectro Technology Development Center | Si J.,Aviation Key Laboratory of Science and Technology on Infrared Detector | Su X.,Luoyang Optoelectro Technology Development Center | And 4 more authors.
Proceedings of SPIE - The International Society for Optical Engineering | Year: 2015

A novel chip pattern with extinction function in Lead salt detectors is specified. Lead Sulfide (PbS) polycrystalline film is prepared by Chemical Bath Deposition (CMD) on a transparent substrate, then a special figure and structure is saved by lithography techonology on the substrate. As a quaternion detector chip that made by PbS thin film for example in this paper, whose performance including signal, noise, weak-peaks and the uniformity of the chip are too poor to meet the detecting system at the initial stage of research, and the qualified ratio of chips is only 3%.This paper explains the reason why the performance and qualified ratio of chips were so poor, focuses on a novel chip pattern with extinction which avoided the disadvantages of traditional one. the novel chip pattern has been applied in detectors. The novel chip pattern is prepared with PbS thin film which both a extinction slicea and detector chip are based on a same substrate, which not only had absorbed the jumbled light, improved the uniformity and other performance of photosensitive elements, but also had left out the assembly diffculty and precision demand when a extinction slice assembly in the restricted space of inswept detector chip, omitted the production process of extinction slice and shorten the assembly process of the detectors, and the qualified ratio of chips had been improved from 3% to 98%. © 2015 SPIE.

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