Avalanche Technology | Date: 2015-02-09
A method of managing logical unit numbers (LUNs) in a storage system includes identifying one or more LUN logical block address (LBA)-groups being affected. The one or more LUN LBA-groups defining a LUN. The method further determining the existence of an association of each of the affected LUN LBA-groups to a portion of a storage pool and maintaining a mapping table to track the association of the LUN LBA-groups to the storage pool.
Avalanche Technology | Date: 2015-01-30
A perpendicular spin-transfer torque magnetic random access memory (STTMRAM) element includes a fixed layer having a magnetization that is substantially fixed in one direction and a barrier layer formed on top of the fixed layer and a free layer. The free layer has a number of alternating laminates, each laminate being made of a magnetic layer and an insulating layer. The magnetic layer is switchable and formed on top of the barrier layer. The free layer is capable of switching its magnetization to a parallel or an anti-parallel state relative to the magnetization of the fixed layer during a write operation when bidirectional electric current is applied across the STTMRAM element. Magnetic layers of the laminates are ferromagnetically coupled to switch together as a single domain during the write operation and the magnetization of the fixed and free layers and the magnetic layers of the laminates have perpendicular anisotropy.
Avalanche Technology | Date: 2015-01-12
A method of writing to one or more solid state disks (SSDs) employed by a storage processor includes receiving a command, creating sub-commands from the command based on a granularity, and assigning the sub-commands to the SSDs independently of the command thereby causing stripping across the SSDs.
Avalanche Technology | Date: 2015-06-03
The present invention is directed to an MRAM device comprising a plurality of MTJ memory elements. Each of the memory elements includes a magnetic free layer and a first magnetic reference layer with an insulating tunnel junction layer interposed therebetween; a second magnetic reference layer formed adjacent to the first magnetic reference layer opposite the insulating tunnel junction layer; an anti-ferromagnetic coupling layer formed adjacent to the second magnetic reference layer opposite the first magnetic reference layer; and a magnetic fixed layer formed adjacent to the anti-ferromagnetic coupling layer. The magnetic free layer has a variable magnetization direction substantially perpendicular to the layer plane thereof. The first and second magnetic reference layers have a first fixed magnetization direction substantially perpendicular to the layer planes thereof. The magnetic fixed layer has a second fixed magnetization direction that is substantially perpendicular to the layer plane thereof and is substantially opposite to the first fixed magnetization direction.
Avalanche Technology | Date: 2015-10-29
One embodiment of the present invention includes a multi-state current-switching magnetic memory element includes a stack of two or more magnetic tunneling junctions (MTJs), each MTJ having a free layer and being separated from other MTJs in the stack by a seeding layer formed upon an isolation layer, the stack for storing more than one bit of information, wherein different levels of current applied to the memory element causes switching to different states.