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Xue C.,Australian Center for Advanced Photovoltaics | Rao J.,Australian Center for Advanced Photovoltaics | Varlamov S.,Australian Center for Advanced Photovoltaics
Physica Status Solidi (A) Applications and Materials Science | Year: 2013

Effective light trapping is required for poly-Si thin film solar cells to compensate for the moderate light absorption. Recent developments of light trapping in the poly-Si cell technology focus on random light scattering in the absorber layer by three means: glass substrate texture, silicon film etch-back texture, and plasmonic nanoparticles. Although silicon nanostructures like porous silicon, silicon nanowires, and silicon nanoholes demonstrate good optical properties, they are seldom considered for poly-Si thin film solar cells due to generally poor electronic properties and difficulty of fabrication. In this paper, the first poly-Si thin film solar cells with a novel silicon nanostructure are fabricated. The Si nanostructure is fabricated by means of metal-assisted wet chemical etching. Silver nanoparticles created by thermal annealing of evaporated silver thin film are used as etching catalyst. Light absorption for both glass-side and air-side illumination are significantly improved. The short-circuit current is enhanced by 21.0% as measured from the glass side and 53.5% from the air side. The open-circuit voltage is improved by 22 mV. It is first demonstration of working poly-Si thin film cells made of such material. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. Source


Xue C.,Australian Center for Advanced Photovoltaics | Kim K.,Australian Center for Advanced Photovoltaics | Varlamov S.,Australian Center for Advanced Photovoltaics
Conference Record of the IEEE Photovoltaic Specialists Conference | Year: 2013

High temperature, 740°C or 800°C, hydrogenation treatment was applied to n-type polycrystalline silicon thin film solar cells on glass with absorber doping from 5×1016 cm-3 to 5×10 17 cm-3, after rapid thermal annealing at 930°C or 970°C. Effects of hydrogenation and RTA temperature on the performance of n-type poly-Si thin film solar cells were studied. It is found that higher RTA temperature leads to higher open circuit voltage in all absorber doping range at low hydrogenation temperature. Higher hydrogenation temperature improves the open circuit voltage in the mediate absorber doping range significantly and this effect is independent of RTA temperature. © 2013 IEEE. Source


Xue C.,Australian Center for Advanced Photovoltaics | Huang J.,Australian Center for Advanced Photovoltaics | Rao J.,Australian Center for Advanced Photovoltaics | Varlamov S.,Australian Center for Advanced Photovoltaics
Scripta Materialia | Year: 2014

A silicon nanostructure is fabricated in polycrystalline silicon thin films by metal-assisted wet chemical etching using thermally annealed silver nanoparticles as a catalyst. The Si nanostructure has an ant-nest feature. Solar cells based on the silicon nanostructure gives 90% short-circuit current enhancement compared to the cells based on the planar film. We also report that Al2O3 passivation of the silicon nanostructure provides a new approach to improving the polycrystalline silicon thin film's electrical property. The open-circuit voltage of the Al2O3 passivated cells is improved by 70 mV. © 2014 Acta Materialia Inc. Source


Conibeer G.,Australian Center for Advanced Photovoltaics | Shrestha S.,Australian Center for Advanced Photovoltaics | Huang S.,Australian Center for Advanced Photovoltaics | Patterson R.,Australian Center for Advanced Photovoltaics | And 12 more authors.
Proceedings of SPIE - The International Society for Optical Engineering | Year: 2014

The hot carrier cell aims to extract the electrical energy from photo-generated carriers before they thermalize to the band edges. Hence it can potentially achieve a high current and a high voltage and hence very high efficiencies up to 65% under 1 sun and 86% under maximum concentration. To slow the rate of carrier thermalisation is very challenging, but modification of the phonon energies and the use of nanostructures are both promising ways to achieve some of the required slowing of carrier cooling. A number of materials and structures are being investigated with these properties and test structures are being fabricated. Initial measurements indicate slowed carrier cooling in III-Vs with large phonon band gaps and in multiple quantum wells. It is expected that soon proof of concept of hot carrier devices will pave the way for their development to fully functioning high efficiency solar cells. © 2014 SPIE. Source

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