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Gif - sur - Yvette, France

The Commissariat à l'énergie atomique et aux énergies alternatives or CEA, is a French public government-funded research organisation in the areas of energy, defense and security, information technologies and health technologies. The CEA maintains a cross-disciplinary culture of engineers and researchers, building on the synergies between fundamental and technological research Wikipedia.


This structure, that is applicable particularly to manufacturing of <> type systems comprises a substrate (


Patent
STMicroelectronics and French Atomic Energy Commission | Date: 2015-11-30

A back side illumination photodiode includes a light-receiving back side surface of a semiconductor material substrate. An area of the light-receiving back side surface includes a recess. The recess is filled with a material having an optical index that is lower than an optical index of the semiconductor material substrate. Both the substrate and the filling material are transparent to an operating wavelength of the photodiode. The recess may be formed to have a ring shape.


Patent
French Atomic Energy Commission | Date: 2015-09-25

The invention relates to a method for producing a multilevel microelectronic structure, comprising at least: the second layer ( and in that it comprises at least the following steps performed after the production of at least one microelectronic pattern (


Patent
French Atomic Energy Commission | Date: 2015-09-21

A method of making crystal semi-conducting material-based elements, including providing a support having amorphous semi-conducting material-based semi-conducting elements, the support being further provided with one or more components and with a reflective protective area configured so as to reflect a light radiation in a given wavelength range, exposing the element(s) to a laser radiation emitting in the given wavelength range so as to recrystallize the elements, the reflective protective area being arranged on the support relative to the elements and to the components so as to reflect the laser radiation and protect the components from this radiation.


Patent
French Atomic Energy Commission | Date: 2015-09-21

The method for performing activation of p-type dopants in a GaN-base semiconductor comprises a first step consisting in providing a substrate comprising (i) a GaN-base semiconductor material layer comprising p-type electric dopant impurities, (ii) a cap block devoid of any silicon-base compound, in contact with the semiconductor material layer, and (iii) a silicon-base covering layer covering the cap block. The method comprises a second heat treatment step at a temperature of more than 900 C. so as to activate the p-type electric dopant impurities in the semiconductor material layer.

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