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Atlanta, GA, United States

"ATDC" redirects here. For the Michigan Tech building, see Advanced Technology Development Complex.The Advanced Technology Development Center is a science and business incubator in Georgia. It is part of the Enterprise Innovation Institute at the Georgia Institute of Technology, and is headquartered in Technology Square. ATDC was formed in 1980 to stimulate growth in Georgia's technology business base, and admitted its first member company in 1981. It now has locations in Atlanta and Savannah. In 2011, ATDC expanded its mission by merging with Georgia Tech’s VentureLab and with the Georgia SBIR Assistance Program. ATDC has opened its membership to all technology entrepreneurs in Georgia, from those at the earliest conception stage to the well-established, venture-fundable companies.More than 120 companies started there, including firms such as MindSpring and TransNexus. Sponsored companies have created almost 51,000 man-years of employment, generated over $12.7 billion revenue, generated over $100 million in profit to Georgia, and raised over $1 billion in venture capital since 1999. ATDC has been recognized by Inc. Magazine and Business Week as one of the nation's top incubators, and won several other awards. Wikipedia.

Sinha S.K.,Indian Institute of Technology Kharagpur | Rakshit T.,ATDC | Ray S.K.,Indian Institute of Technology Kharagpur | Manna I.,Indian Institute of Technology Kharagpur | Manna I.,Indian Central Glass and Ceramic Research Institute
Applied Surface Science | Year: 2011

Thin films of ZnO-SnO2 composites have been deposited on Si(1 0 0) and glass substrates at 500 °C by pulsed laser ablation using different composite targets with ZnO amount varying between 1 and 50 wt%. The effect of increasing ZnO-content on electrical, optical and structural properties of the ZnO-SnO2 films has been investigated. X-ray diffraction analysis indicates that the as-deposited ZnO-SnO2 films can be both crystalline (for ZnO <1 wt%) and amorphous (for ZnO ≥ 10 wt%) in nature. Atomic force microscopy studies of the as-prepared composite films indicate that the surfaces are fairly smooth with rms roughness varying between 3.07 and 2.04 nm. The average optical transmittance of the as-deposited films in the visible range (400-800 nm), decreases from 90% to 72% for increasing ZnO concentration in the film. The band gap energy (Eg) seems to depend on the amount of ZnO addition, with the maximum obtained at 1 wt% ZnO. Assuming that the interband electron transition is direct, the optical band gap has been found to be in the range 3.24-3.69 eV for as-deposited composite films. The lowest electrical resistivity of 7.6 × 10-3 Ω cm has been achieved with the 25 wt% ZnO composite film deposited at 500 °C. The photoluminescence spectrum of the composite films shows a decrease in PL intensity with increasing ZnO concentration. © 2011 Elsevier B.V. All rights reserved.

Dutta G.,ATDC | Basu S.,Kalyani Government Engineering College
Conference Proceedings - The 8th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010 | Year: 2010

Heterojunction Bipolar Transistors with GaAs base and InGaP emitter have increasingly become important since they have great potential for numerous low- and high-frequency microwave circuit applications due to their high linearity, good reliability and nearly ideal current-voltage characteristics. Current gain and transit time are two important factors for determining the performance of these devices as amplifiers and as switches. Switching speed is mainly determined by transit time of minority carriers across a device and forward transit time is an important component of the total transit time. An analytical model is developed here to predict the variation of current gain and forward transit time with composition of InGaP emitter, as well as with emitter and base doping profile. Dependence of band gap and diffusion constants on composition of InGaP emitter is also considered in the analysis. Performance of these devices is compared with that of AlGaAs/GaAs and Si/SiGe HBTs. ©2010 IEEE.

Naha A.,Indian Institute of Technology Kharagpur | Samanta A.K.,ATDC | Routray A.,Indian Institute of Technology Kharagpur | Deb A.K.,Indian Institute of Technology Kharagpur
IEEE Signal Processing Letters | Year: 2015

Detectability of closely spaced sinusoids in a noisy signal using MUltiple SIgnal Classifier (MUSIC) depends to a great extent on the sampling frequency (Fs) and the size of the autocorrelation matrix (N). Improper choice of any of these may result in increased computational burden and/or unresolved frequency components. This paper presents an analytical approach to determine expressions of lobe width using Fs and N at lobe base (Δ fb) and half of the lobe height (Δ fh). The required values of Fs and N can be derived from the expression of Δ fb for distortion-less lobe heights of two closely spaced sinusoids. A tighter bound can be found using the expression of only Δ fh to resolve two distinct peaks. Probability of resolution using reciprocal of MUSIC peaks is determined for various N and it's limit for full resolvability was verified with the derived analytical expressions. © 2014 IEEE.

Bhattacharjee S.,ATDC | Deb D.,Indian Institute of Technology Kharagpur
Rock Dynamics and Applications - State of the Art: Proceedings of the 1st International Conference on Rock Dynamics and Applications, RocDyn-1 2013 | Year: 2013

Mechanism of rock failure due to static or dynamic loads (mainly blasting) has been investigated using electrical, acoustic and vibration based on sensor technology. However, these methods do not provide comprehensive knowledge about fracture process since data are collected at few points inside a rock sample. Recent advancement in image processing techniques shows promise to track rock fracturing process using optical flow image processing method. This process is simpler and not intrusive compared to traditional sensor based techniques. The Digital Image Correlation (DIC) is a non-contacting method, which measures surface deformation/displacement/strain of an object subjected to external loading and boundary conditions. A rock sample under uniaxial loading condition shows that it is possible to identify the failure mechanism using optical flow diagram at different time interval. From these results, velocity and strain rate of each pixel can be obtained to identify the fractures on the surface of the rock sample. The paper demonstrates the applicability of the proposed method for monitoring of failure mechanism for possible applications in mine environment. © 2013 Taylor & Francis Group.

Sinha S.K.,Indian Institute of Technology Kharagpur | Rakshit T.,ATDC | Ray S.K.,Indian Institute of Technology Kharagpur | Manna I.,Indian Institute of Technology Kharagpur | Manna I.,Indian Central Glass and Ceramic Research Institute
Philosophical Magazine Letters | Year: 2012

Hybrid ZnO-SnO 2 nanobelts were synthesized through a simple thermal evaporation technique without using any catalyst. Detailed microstructural investigation showed that the nanobelts possessed doped/alloyed wurtzite (ZnO) and rutile (SnO 2) structures. The diameter and length of the nanobelts were in the ranges 100-200 and 20-40m, respectively. Low-temperature photoluminescence properties of the hybrid ZnO-SnO 2 nanostructured aggregate revealed a red shift of near-band-edge emission peaks of ZnO with increasing temperature. The method of synthesis offers a convenient and effective technique of producing hybrid ZnO-SnO 2 nanobelts for gas sensing in the large quantity. © 2012 Copyright Taylor and Francis Group, LLC.

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