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Veldhoven, Netherlands

Butler H.,ASML Inc
IEEE Control Systems Magazine | Year: 2011

Lithographic steppers and scanners are highly complex machines used to manufacture integrated circuits (ICs). These devices use an optical system to form an image of a pattern on a quartz plate, called the reticle, onto a photosensitive layer on a substrate, called the wafer. The circular wafer, having a diameter of 200 or 300 mm, is usually made of silicon. Since one wafer can contain many ICs, typically 100 or more, the wafer needs to be repositioned from exposure to exposure. Exposure itself takes place during a scanning motion of the wafer and the reticle. © 2011 IEEE. Source


Van Den Brink M.,ASML Inc
Digest of Technical Papers - IEEE International Solid-State Circuits Conference | Year: 2013

Chip makers are increasingly concerned about the shrink and cost. This concern drives different lithography solutions for different products. Two major trends can be observed: aggressive adoption of EUV, or aggressive extension of immersion. Further cost reduction could be achieved by introducing 450mm wafers. © 2013 IEEE. Source


An inspection apparatus includes an illumination system that receives a first beam and produces second and third beams from the first beam and a catadioptric objective that directs the second beam to reflect from a wafer. A first sensor detects a first image created by the reflected second beam. A refractive objective directs the third beam to reflect from the wafer, and a second sensor detects a second image created by the reflected third beam. The first and second images can be used for CD measurements. The second beam can have a spectral range from about 200 nm to about 425 nm, and the third beam can have a spectral range from about 425 nm to about 850 nm. A third sensor may be provide that detects a third image created by the third beam reflected from the wafer. The third image can be used for OV measurements.


Patent
ASML Inc | Date: 2012-07-20

A lithographic apparatus is provided and configured to project a patterned beam of radiation onto a substrate. The apparatus has a measurement system to provide measurement data related to a thickness of a resist layer on the substrate, and a controller to control the operation of the lithographic apparatus such that a radiation intensity level in the patterned beam to be projected onto the substrate is controlled based on the measurement data.


Patent
ASML Inc | Date: 2010-10-04

A method is disclosed. A change in position of a substrate in a direction substantially parallel to a direction of propagation of a radiation beam that is, or is to be, projected on to that substrate is determined, which change in position would result in a lithographic error in the application of a pattern to that substrate using that radiation beam. The change in position of the substrate is used to control a property of the radiation beam when, or as, the radiation beam is projected onto the substrate in order to reduce the lithographic error.

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