ASM International, formerly known as the American Society for Metals, is a professional organization for materials scientists and engineers. Their website defines the society as an engineering and scientific community, "led by its members, guided by the members needs and fueled by member participation," sharing information and ideas through local chapter meetings, international conferences and expositions, affiliate societies, education courses and various technical publications Wikipedia.
ASM International | Date: 2016-11-22
Antimony oxide thin films are deposited by atomic layer deposition using an antimony reactant and an oxygen source. Antimony reactants may include antimony halides, such as SbCl_(3), antimony alkylamines, and antimony alkoxides, such as Sb(OEt)_(3). The oxygen source may be, for example, ozone. In some embodiments the antimony oxide thin films are deposited in a batch reactor. The antimony oxide thin films may serve, for example, as etch stop layers or sacrificial layers.
ASM International | Date: 2016-11-18
Metallic layers can be selectively deposited on one surface of a substrate relative to a second surface of the substrate. In some embodiments, the metallic layers are selectively deposited on copper instead of insulating or dielectric materials. In some embodiments, a first precursor forms a layer on the first surface and is subsequently reacted or converted to form a metallic layer. The deposition temperature may be selected such that a selectivity of above about 50% or even about 90% is achieved.
ASM International | Date: 2016-11-29
An apparatus (100) comprising:a process tunnel (102) including a lower tunnel wall (120), an upper tunnel wall (130), and two lateral tunnel walls (108), wherein said tunnel walls together bound a process tunnel space (104) that extends in a transport direction (T);a plurality of gas injection channels (122, 132), provided in both the lower and the upper tunnel wall, wherein the gas injection channels in the lower tunnel wall are configured to provide a lower gas bearing (124), while the gas injection channels in the upper tunnel wall are configured to provide an upper gas bearing (134), said gas bearings being configured to floatingly support and accommodate said substrate there between; anda plurality of gas exhaust channels (110), provided in both said intend tunnel walls (108), wherein the gas exhaust channels in each lateral tunnel wall are spaced apart in the transport direction.
ASM International | Date: 2015-11-03
An atomic layer deposition apparatus, having a first series of high pressure gas injection openings and a first series of exhaust openings that are positioned such that they together create a first high pressure/suction zone within each purge gas zone, wherein each first high pressure/suction zone extends over substantially the entire width of the process tunnel and wherein the distribution of the gas injection openings that are connected to the second purge gas source and the distribution of the gas exhaust openings within the first high pressure/suction zone, as well as the pressure of the second purge gas source and the pressure at the gas exhaust openings are such that the average pressure within the first high pressure/suction zone deviates less than 30% from a reference pressure which is defined by the average pressure within process tunnel when no substrate is present.
Agency: European Commission | Branch: FP7 | Program: CP | Phase: ICT-2013.3.3 | Award Amount: 11.05M | Year: 2013
SEA4KET (Semiconductor Equipment Assessment for Key Enabling Technologies) is an IP proposal taking the consequent step from equipment R&D to equipment assessment experiments. The strategic objective is to effectively combine resources and expertise in a joint assessment of novel equipment for key enabling technologies to foster and accelerate the successful transfer of novel European equipment into the world-wide market.\nSEA4KET builds on the proven principle established in previous European SEA programs and projects: to take novel, innovative and promising equipment that has left the R&D phase into a joint assessment activity this bridges the well-known gap between the phase of having an engineered tool available and finding the first user and finally success in the market for it.\nWhile proven principles from previous SEA activities are kept, SEA4KET takes them to the new field of assessing equipment for Key Enabling Technologies: SEA4KET concentrates on process and metrology systems for important enablers of future technologies: 450 mm wafer equipment, SiC material and 3D processing. The proposal comprises 15 sub-projects each dedicated to a specific equipment. The assessment activities were to a lesser extent chosen by high S&T excellence, but by their expected chance on the market.\nWhile leading R&D institutes are active in each assessment experiment to support individual final developments, several cross-cut R&D activities were identified (and combined in a dedicated sub-project) that are relevant to multiple assessments. Training material will be provided and workshops will be organized, to support and strengthen the individual dissemination activities.\nSEA4KET will significantly strengthen the European equipment and material industry for the emerging market for Key Enabling Technologies in a sustainable way by combining advanced R&D with equipment assessment involving users, institutes and equipment suppliers with specific benefit for SME suppliers.
ASM International | Date: 2015-10-13
Atomic layer deposition (ALD) processes for forming Te-containing thin films, such as SbTe, GeTe, GeSbTe, BiTe, and ZnTe thin films are provided. ALD processes are also provided for forming Se-containing thin films, such as SbSe, GeSe, GeSbSe, BiSe, and ZnSe thin films are also provided. Te and Se precursors of the formula (Te,Se)(SiR^(1)R^(2)R^(3))_(2 )are preferably used, wherein R^(1), R^(2), and R^(3 )are alkyl groups. Methods are also provided for synthesizing these Te and Se precursors. Methods are also provided for using the Te and Se thin films in phase change memory devices.
ASM International | Date: 2016-06-20
In one aspect, methods of silicidation and germanidation are provided. In some embodiments, methods for forming metal silicide can include forming a non-oxide interface, such as germanium or solid antimony, over exposed silicon regions of a substrate. Metal oxide is formed over the interface layer. Annealing and reducing causes metal from the metal oxide to react with the underlying silicon and form metal silicide. Additionally, metal germanide can be formed by reduction of metal oxide over germanium, whether or not any underlying silicon is also silicided. In other embodiments, nickel is deposited directly and an interface layer is not used. In another aspect, methods of depositing nickel thin films by vapor phase deposition processes are provided. In some embodiments, nickel thin films are deposited by ALD. Nickel thin films can be used directly in silicidation and germanidation processes.
ASM International | Date: 2016-08-31
Atomic layer deposition apparatus for depositing a film in a continuous fashion. The apparatus includes a process tunnel, extending in a transport direction and bounded by at least a first and a second wall. The walls are mutually parallel and allow a flat substrate to be accommodated there between. The apparatus further includes a transport system for moving a train of substrates or a continuous substrate in tape form, through the tunnel. At least the first wall of the process tunnel is provided with a plurality of gas injection channels that, viewed in the transport direction, are connected successively to a first precursor gas source, a purge gas source, a second precursor gas source and a purge gas source respectively, so as to create a tunnel segment that - in use - comprises successive zones containing a first precursor gas, a purge gas, a second precursor gas and a purge gas, respectively.
ASM International | Date: 2016-01-05
Metallic layers can be selectively deposited on surfaces of a substrate relative to a second surface of the substrate. In preferred embodiments, the metallic layers are selectively deposited on copper instead of insulating or dielectric materials. In preferred embodiments, a first precursor forms a layer or adsorbed species on the first surface and is subsequently reacted or converted to form a metallic layer. Preferably the deposition temperature is selected such that a selectivity of above about 90% is achieved.
ASM International | Date: 2016-05-18
Methods are provided herein for forming transition metal oxide thin films, preferably Group IVB metal oxide thin films, by atomic layer deposition. The metal oxide thin films can be deposited at high temperatures using metalorganic reactants. Metalorganic reactants comprising two ligands, at least one of which is a cycloheptatriene or cycloheptatrienyl (CHT) ligand are used in some embodiments. The metal oxide thin films can be used, for example, as dielectric oxides in transistors, flash devices, capacitors, integrated circuits, and other semiconductor applications.