Asian Growth Research Institute

Kitakyūshū, Japan

Asian Growth Research Institute

Kitakyūshū, Japan

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Tsukuda M.,Asian Growth Research Institute | Tsukuda M.,Kyushu Institute of Technology | Tomonaga H.,Kyushu Institute of Technology | Okoda S.,Copper Electronics Co. | And 3 more authors.
Microelectronics Reliability | Year: 2015

We developed a high-throughput screening tester for DBC-module of IGBT. The tester realizes a new screening test with current distribution in addition to a conventional switching test. It consists of a power circuit, a replaceable test head, sensor array module and digitizer with LabVIEW program. Therefore, all kinds of DBC-modules can be screened by switching the test head. The tester acquires magnetic field signals and displays GO/NOGO judgment automatically after digital calibration and signal processing in 10 s. It is expected to be applied for screening in a production line and analysis in order to prevent the failure of power modules. © 2015 Elsevier Ltd.


Tomonaga H.,Kyushu Institute of Technology | Tsukuda M.,Kyushu Institute of Technology | Tsukuda M.,Asian Growth Research Institute | Okoda S.,COPER Electronics CO. | And 3 more authors.
Microelectronics Reliability | Year: 2015

Current crowding of IGBT and power diode in a chip or among chips is a barrier to the realization of highly-reliable power module and power electronics system. Current crowding occurs because of the parasitic inductance, difference of chip characteristics or temperature imbalance among chips. Although current crowding among IGBT or power diode chips has been analysed on numerical simulations, no sensor with sufficiently high special resolution and fast measurement time has yet been demonstrated. Therefore, the author developed and demonstrated 16-channel flat sensitivity sensor array for IGBT current distribution measurement. The sensor array consists of tiny-scale film sensors with analog amps and shield case against noise. The array and digital calibration method will be applied for reliability analysis, designing and screening of IGBT modules. © 2015 Elsevier Ltd.


Li G.,Railway Technical Research Institute | Tamura K.,Asian Growth Research Institute | Muto M.,Railway Technical Research Institute | Okuda D.,Railway Technical Research Institute
Jiaotong Yunshu Xitong Gongcheng Yu Xinxi/Journal of Transportation Systems Engineering and Information Technology | Year: 2014

Intermodal transport generally concerns a few of fundamental elements such as freight's characteristics, shippers' and forwarder evaluations. The freight's characteristics decide the relevant potential demands and the possibility to combine different transport means into intermodalism. The evaluations of shippers and forwarders always have an important impact on the selections of transport. This paper comparatively analyzes the critical elements of freight's characteristics, shippers' and forwarder evaluations. Moreover, the possibilities and relevant issues to form the road- rail intermodal freight transport are discussed. And, some suggestions are proposed to improve the railway freight services. ©, 2014, Science Press. All right reserved.


Yamamoto K.,Kyushu Institute of Technology | Ichihara F.,Kyushu Institute of Technology | Hasegawa K.,Kyushu Institute of Technology | Tukuda M.,Asian Growth Research Institute | Omura I.,Kyushu Institute of Technology
Proceedings of the International Symposium on Power Semiconductor Devices and ICs | Year: 2015

This paper shows the very first demonstration result of wireless IGBT gate drive using with 60 GHz wireless module with sufficient 'real-time' control with 100 ns-level time delay with small fluctuation of the delay. © 2015 IEEE.


Watanabe A.,Kyushu Institute of Technology | Tsukuda M.,Asian Growth Research Institute | Tsukuda M.,Kyushu Institute of Technology | Omura I.,Kyushu Institute of Technology
Microelectronics Reliability | Year: 2015

The aim is to provide failure analysis of power devices based on real-time monitoring. The real-time monitoring provides a time-domain data related to a failure mechanism. The data includes important information about primary failure, which is often lost by conventional post-defect failure analysis. Our system monitors interfaces of component material inside the device by scanning acoustic tomography (SAT) under a power cycling test in addition to electrical and thermal condition of the device. A precursor of the failure in an early stage was indicated by the interface image much earlier than a thermal and an electrical technique. Feature identification and extraction from a series of image data by image processing efficiently pointed out the damaged site before the failure was occurred. © 2015 Elsevier Ltd.


Tsukuda M.,Asian Growth Research Institute | Tsukuda M.,Kyushu Institute of Technology | Imaki H.,Kyushu Institute of Technology | Omura I.,Kyushu Institute of Technology
Solid-State Electronics | Year: 2015

An ultrafast lateral silicon PiN diode with geometric traps is proposed using a silicon-on-insulator (SOI) substrate with the traps. The proposed diode successfully suppresses waveform oscillation because the trapped hole suppresses electric field penetration and prevents the oscillation trigger known as "dynamic punch-through." Because of the short current path caused by the oscillation prevention, the reverse recovery speed was higher and the reverse recovery loss was strongly reduced. The proposed trap structure and design method would contribute to performance improvement of all power semiconductor devices including IGBTs and power MOSFETs. © 2014 Elsevier Ltd.


Hariya A.,Nagasaki University | Matsuura K.,TDK Corp | Yanagi H.,TDK Corp | Tomioka S.,TDK Corp | And 2 more authors.
IEEE Transactions on Industry Applications | Year: 2015

High power efficiency and high power density are required in regulated isolated dc-dc converters. In this paper, a novel pulsewidth modulation (PWM) control method that is suitable for an isolated current-mode resonant dc-dc converter operated at a megahertz-level switching frequency is proposed. The output voltage with the proposed method can be regulated with no additional components at a fixed switching frequency. In addition, the zero-voltage switching (ZVS) of primary-side switches at turn on can be maintained. The principle of the proposed method and the method of the ZVS operation in the proposed method are explained. Some experiments have been performed with a 5-MHz isolated step-down dc-dc converter using gallium nitride high-electron-mobility transistors; the output voltage is 12 V, and the total volume of the circuit is 16.14 cm3. With the proposed PWM control method, the input voltage range is 42-45.5 V, and the maximum load current range is 10 A at Vi = 45.5 V. The ZVS of the primary-side switches at turn on is confirmed in all experimental regions, and the maximum power efficiency is 89.2%. © 2015 IEEE.

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