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Miaoli, Taiwan

Asia-Pacific Institute of Creativity is an educational college in Toufen Township, Miaoli County, Taiwan. Wikipedia.


Lin Y.-H.,Asia Pacific Institute of Creativity | Chen J.-M.,National Central University | Chen Y.-C.,Tungnan University
Mathematical and Computer Modelling | Year: 2011

This paper develops an integrated model of production lot-sizing, maintenance and quality for considering the possibilities of inspection errors, preventive maintenance (PM) errors and minimal repairs for an imperfect production system with increasing hazard rates. In this study, a PM activity is imperfect in that a production system cannot be recovered as good as new and might cause the production system to shift to the out-of-control state with a certain probability. Numerical analyses are used to simulate the effect of changes in various parameters on the optimal solution for which the time that the process remains in the in-control state is assumed to follow a Weibull distribution. In addition, we investigate the effects of inspection errors and PM errors on the minimum total cost of the optimal inspection interval, inspection frequency and production quantity. © 2010 Elsevier Ltd.


Lin C.-H.,Asia Pacific Institute of Creativity
Japanese Journal of Applied Physics | Year: 2012

In this study, copper (Cu) alloy films developed by reactive co-sputtering of Cu with iridium (Ir) in an Ar/N 2 atmosphere to render Cu(Ir) and Cu(IrN x ) seed layers on barrierless Si substrates are found to exhibit great thermal stability, low resistivity, and a good adhesion feature. The Cu(Ir) and Cu(IrN x ) films are annealed at 650 and 730 °C for 1 h, displaying good thermal stability with low leakage current for the latter and low resistivity values of 4.32 and 2.67 μΩcm, respectively; no copper silicide formation occurs at the Cu-Si interface. The IrN x 's thermal stability and low resistivity reveal that the Cu(IrN x ) is a good candidate for advanced barrierless metallization in forming a new type of interconnect for electronic components, such as capacitors. © 2012 The Japan Society of Applied Physics.


Lin C.-H.,Asia Pacific Institute of Creativity
Japanese Journal of Applied Physics | Year: 2015

In this study, we explore new Cu(Ge) and Cu(GeNx) films for LED heat dissipation. The films are Cu-alloy seed layers, fabricated by co-sputtering Cu and Ge in an Ar or N2 atmosphere on either Ta/Al2O3 or polyimide substrates. The Cu alloy films are then annealed at 600 and 730 °C, respectively, for 1 h without notable Cu oxide formation at the Cu-Ta/Al2O3 interface. No Cu oxide is formed at the Cu-polyimide interface either after annealing the films at 310 °C for 1 h. The film formed atop an Al2O3 substrate contains a trace amount of GeNx and is thermally stable up to 730 °C, and the film formed atop a polyimide substrate is thermally stable up to 310 °C, both exhibiting a low resistivity and a high thermal conductivity. Such a thermal feature makes the Cu(GeNx) film a good candidate material in barrierless metallization for many industrial applications, such as LED heat sinks. © 2015 The Japan Society of Applied Physics.


Lin C.-H.,Asia Pacific Institute of Creativity
Japanese Journal of Applied Physics | Year: 2012

In this study, we prepare Cu(ReTa) and Cu(ReTaNx ) films via reactive cosputtering of copper (Cu), rhenium (Re), and tantalum (Ta) on a barrierless silicon (Si) substrate in an argon-nitrogen (Ar-N2) atmosphere. These Cu(ReTa) and Cu(ReTaNx ) films, after annealing at 630 and 750°C for 1 h, exhibit two values of resistivity, viz., 3.05 and 2.35 cm, respectively, showing high thermal stability without copper-silicide formation. The Cu(ReTaNx ) film's up-to-750°C high-temperature stability, while maintaining a low leakage current and resistivity, appears to make it a good candidate material for advanced barrierless metallization for simplifying related electronic-device manufacturing processes, and, consequently, reducing the related manufacturing cost. Applying X-ray diffraction (XRD), focused ion-beam microscopy, and transmission electron microscopy (TEM) to evaluate said film, we observed that the Cu seed layer-Si interface showed no detrimental reaction after the film was annealed at 750°C for 1 h. The film, hence, is recommended for the desired purpose. © 2012 The Japan Society of Applied Physics.


Lin C.-H.,Asia Pacific Institute of Creativity
Japanese Journal of Applied Physics | Year: 2016

In this study, a new copper alloy [Cu(AuTiNx)] film is developed for industrial applications, by cosputtering Cu and titanium gold (AuTi) targets on a barrierless Si substrate within a vacuum chamber sparsely filled with N2 gas. Through extensive tests conducted in this study, the new alloy film, after annealing at 720 °C for 1 h, shows good thermal stability and high adhesion strength to the substrate, without appreciable interactions between the film and the substrate. The new Cu(AuTiNx) alloy film also has adequate wetting for solder, shows good solderability, and has a dissolution rate lower than that of pure Cu by at least 1 order of magnitude, in addition to having a comparable consumption rate to that of Ni. The alloy film seems to be suitable for many industrial applications, e.g., barrierless Si metallization, interconnect manufacture, and as new wetting and diffusion layers for flip-chip solder joints in conventional metallurgy. © 2016 The Japan Society of Applied Physics.

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