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Kista, Sweden

Mikhaylova A.I.,Acreo Ab | Afanasyev A.V.,Saint Petersburg State University | Ilyin V.A.,Saint Petersburg State University | Luchinin V.V.,Saint Petersburg State University | And 4 more authors.
Semiconductors | Year: 2016

The effect of phosphorus implantation into a 4H-SiC epitaxial layer immediately before the thermal growth of a gate insulator in an atmosphere of dry oxygen on the reliability of the gate insulator is studied. It is found that, together with passivating surface states, the introduction of phosphorus ions leads to insignificant weakening of the dielectric breakdown field and to a decrease in the height of the energy barrier between silicon carbide and the insulator, which is due to the presence of phosphorus atoms at the 4H-SiC/SiO2 interface and in the bulk of silicon dioxide. © 2016, Pleiades Publishing, Ltd.


Ilyin V.A.,Saint Petersburg Electrotechnical University | Afanasyev A.V.,Saint Petersburg Electrotechnical University | Ivanov B.V.,Saint Petersburg Electrotechnical University | Kardo-Sysoev A.F.,RAS Ioffe Physical - Technical Institute | And 5 more authors.
Materials Science Forum | Year: 2016

The paper reports on the results of the studies of static and dynamic characteristics of 4HSiC drift step recovery diodes (DSRDs) assembled in diode stacks. Switching performance of single dies has been simulated and experimentally confirmed. It was established that the switching process is determined primarily by the incomplete ionization of acceptors in 4H-SiC and by the bandgap narrowing in heavily doped emitters. Based on the simulation results the optimized die size has been selected. For DSRD stacks of 4 and 8 dies I-V and C-V measurements are reported. The stacks were dynamically tested in a special oscillator circuit. Repetitive voltage pulses of 10.5 kV with the leading edge length of 900 ps were demonstrated. © 2016 Trans Tech Publications, Switzerland.


Gysin U.,University of Basel | Meyer E.,University of Basel | Glatzel T.,University of Basel | Gunzburger G.,Helmholtz Center Berlin | And 6 more authors.
Microelectronic Engineering | Year: 2016

Several Scanning Probe Microscopy (SPM) methods allow to image dopant profiles in a range from 1014 cm-3 to 1019 cm-3 on semiconducting samples. In our work we present Scanning Capacitance Force Microscopy (SCFM) and Kelvin Probe Force Microscopy (KPFM) experiments performed on cross sections of silicon (Si) and silicon carbide (SiC) power devices and epitaxially grown calibration layers. The contact potential difference (CPD) shows under illumination a reduced influence on surface defect states. In addition results from numerical simulation of these microscope methods are discussed. © 2016 Elsevier B.V.All rights reserved.


Afanasyev A.V.,Saint Petersburg Electrotechnical University | Ivanov B.V.,Saint Petersburg Electrotechnical University | Ilyin V.A.,Saint Petersburg Electrotechnical University | Kardo-Sysoev A.F.,RAS Ioffe Physical - Technical Institute | And 4 more authors.
Materials Science Forum | Year: 2015

In this paper we report on the effect of temperature and injection level on the effective lifetime of non-equilibrium charge carriers in p-base of 4H-SiC PiN diodes. Studies were carried out on 1kV drift step recovery diodes (DSRDs) with p+-p--n+. The lifetime of non-equilibrium charge carriers in 4H-SiC p+-p--n+ structures increases by an average of 6 times from 250ns to 1.4μs with the increase of the samples temperature from 300K to 673K. However, increase of the injection level in the drift region from 2.3·1016cm-3 to 5.9·1016cm-3 does not affect the lifetime indicating that Shockley-Read-Hall recombination processes are dominating. © (2015) Trans Tech Publications, Switzerland.


Mikhaylov A.I.,Acreo Ab | Afanasyev A.V.,SPbETU LETI | Luchinin V.V.,SPbETU LETI | Reshanov S.A.,Ascatron AB | And 2 more authors.
Materials Research Society Symposium Proceedings | Year: 2014

An alternative approach for reduction of interface traps density at 4H-SiC/SiO2 interface is proposed. Silicon nitride / silicon oxide stack was deposited on p-type 4H-SiC (0001) epilayers and subsequently over-oxidized. The electrical characterization of the interface was done by employing metal-oxide semiconductor (MOS) devices, inversion-channel MOS devices and lateral MOS field effect transistors (MOSFETs). Copyright © 2014 Materials Research Society.

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