Agency: Department of Energy | Branch: | Program: SBIR | Phase: Phase I | Award Amount: 149.98K | Year: 2015
Geothermal energy is a cost effective, reliable, environment-friendly, and sustainable energy source that has been utilized for space heating since Roman times but is now in recent years has become more attractive for its use in electricity generation. In order to harvest this energy, components must be subjected to extreme environments driven by high temperatures and pressures between the crust and core of the Earth. Conventionally, a downhole actuator system is based on a hydraulic technology and up until this point; the electronics have been limited to monitoring and logging type functionality. However, to eliminate the complexity of hydraulic systems and increase the productivity of harnessing geothermal energy, a pure electrical system is ideal. In this Phase I SBIR project, APEI will design and develop a high temperature 300 C) SiC- based power module with an integrated silicon carbide SiC) application specific integrated circuit ASIC) gate driver for geothermal applications. The advantage of this power module is high temperature operation with extended reliability while subjected to harsh environments associated with downhole drilling.
Agency: National Aeronautics and Space Administration | Branch: | Program: SBIR | Phase: Phase I | Award Amount: 125.00K | Year: 2015
The objective of this proposal is to develop and commercialize a high reliability, high temperature smart neutron flux sensor for NASA Nuclear Thermal Propulsion (NTP) systems. Arkansas Power Electronics International (APEI) and International Femtoscience (FemtoSci) technology offers the following: (1) 600+ degC ambient operation of a full wireless smart sensor system (2) Extreme-environment electronics utilizing wide band gap integrated circuits and advanced magnetic components (3) CVD nano-diamond neutron flux sensor for near-core measurements, capable of operation to >700 degC (4) Harsh environment packaging technologies to ensure reliable operation at 700 degC (5) Radiation hard, high temperature electronics will offer high reliability nuclear propulsion instrumentation, as well as provide solutions for terrestrial nuclear power generation instrumentation.
Agency: Department of Energy | Branch: | Program: SBIR | Phase: Phase I | Award Amount: 149.95K | Year: 2014
An ideal transistor from a circuit designers standpoint consists of an ultra-low on-resistance, majority carrier switching, low gate current drive, and normally-off design. These features are inherent in the silicon carbide (SiC) power MOSFET, with the small footnote that the device, although having surpassed many hurdles along the way, is still plagued by a few key issues that limit commercial adoption into todays systems threshold voltage instability and body diode forward voltage degradation. These issues result in a limited application space for SiC MOSFETs due to the bias-dependent threshold voltage and oversizing (cost increasing) of the anti-parallel SiC Schottky diodes to ensure the body diodes do not conduct current, respectively. These reliability issues need to be studied across device vendors, SiC MOSFET structures, SiC MOSFET device generations, active areas, gate-bias electric fields, and temperature to allow for an accurate assessment of the technology. The work proposed herein addresses all of these variables and will help industry better understand the instabilities of the devices over a range of conditions, as well as the implications to the end user, due to APEI, Inc.s unique in-house system design team. Commercial Applications and Other Benefits: Proposed long term testing includes high temperature positive and negative gate bias, body diode bias, and switching tests across a number of commercial and state-of-the-art SiC MOSFET manufacturers such as Cree, Rohm Semiconductor, GE, Microsemi, and STMicroelectronics. Individual device performance data will be collected at strategic time intervals throughout testing with the end goal being an accurate assessment of any device performance shift as a result of the applied bias. As a leader in wide bandgap electronics, APEI, Inc. has a vested interest in developing qualification and reliability test programs in order to further advance the adoption of SiC devices into commercial, industrial, military, aerospace, and energy exploration applications. By remaining device neutral, APEI, Inc. is able to provide independent, unbiased, accurate results as a 3rd-party testing facility.
Arkansas Power Electronics International and ROHM Semiconductor | Date: 2010-09-07
Provided are a semiconductor device and a method of fabricating the semiconductor device, the semiconductor device including: a source trace, a drain trace, and a gate trace placed on a substrate; a transistor which is placed on the drain trace and includes a source pad and a gate pad; insulating films placed between the drain and source traces and between the drain and gate traces on the substrate so as to cover sidewall surfaces of the transistor; a source spray electrode which is placed on the insulating film between the source and drain traces and connects the source pad of the transistor and the source trace; and a gate spray electrode placed on the insulating film between the gate and drain traces and connects the gate pad of the transistor and the gate trace.
Arkansas Power Electronics International | Date: 2015-01-30
A power module with multiple equalized parallel power paths supporting multiple parallel bare die power devices constructed with low inductance equalized current paths for even current sharing and clean switching events. Wide low profile power contacts provide low inductance, short current paths, and large conductor cross section area provides for massive current carrying. An internal gate & source kelvin interconnection substrate is provided with individual ballast resistors and simple bolted construction. Gate drive connectors are provided on either left or right size of the module. The module is configurable as half bridge, full bridge, common source, and common drain topologies.