Akishima, Japan
Akishima, Japan

Time filter

Source Type

Chen L.C.,Yamanashi University | Yu Z.,Yamanashi University | Yu Z.,Shenyang Normal University | Furuya H.,Shenyang Normal University | And 5 more authors.
Journal of Mass Spectrometry | Year: 2010

The development of a new configuration of chemical ionization (CI)-based ion source is presented. The ambient air containing the gaseous sample is sniffed into an enclosed ionization chamber which is of sub-ambient pressure, and is subsequently mixed with metastable species in front of the ion inlet of the mass spectrometer. Metastable helium atoms (He?) are used in this study as the primary ionizing agents and are generated from a dielectric barrier discharge (DBD) source. The DBD is powered by an AC high-voltage supply and the configuration of the electrodes is in such a way that the generated plasma is confined within the discharge tube and is not extended into the ionization chamber. The construction of the ion source is simple, and volatile compounds released from the bulky sample can also be analyzed directly by approaching the sample to the sampling nozzle. When combined with heated nitrogen or other desorptionmethods, its application can also be extended to non-volatile compounds, and the consumption for helium can be kept minimum solely for maintaining the stable discharge and gas phase ionization. Applications to non-proximate sample analysis, direct determination of active ingredients in drug tablets and the detection of trace explosive such as hexamethylene triperoxide diamine are demonstrated. Copyright © 2010 John Wiley & Sons, Ltd.


Hiraoka K.,Yamanashi University | Ninomiya S.,Yamanashi University | Chen L.C.,Yamanashi University | Iwama T.,Yamanashi Prefectural Industrial Technology Center | And 5 more authors.
Analyst | Year: 2011

This paper deals with the dielectric barrier discharge (DBD) ion source composed of the outer cylindrical dielectric tube and the inner grounded metallic tube electrode. The sample gas is supplied through the inner ceramic tube. In this ion source, the DBD plasma is localized in the DBD tube so that the sample gases can be ionized just outside of the ceramic tube by the DBD excited helium gas without being exposed in the plasma jet. Besides, ambient air does not take part in the ionization of the sample vapor because ionization takes place inside the DBD ion source. Thus, this method is totally free from contaminants in ambient air. It was found that this ion source is capable of soft, high-sensitivity, and reproducible ionization. Application of this technique to the analysis of methamphetamine, carbaryl and basil leaf was given. © 2011 The Royal Society of Chemistry.


Patent
Arios Inc. and The Doshisha | Date: 2013-01-03

An atomic flux measurement device for measuring the amount of dissociated atomic flux produced by discharge and emitted from a plasma generation cell into a vacuum camber. The atomic flux measurement device includes a counter electrode body including a pair of first and second sheet-like electrodes that are arranged substantially parallel to each other with a predetermined spacing between them, a direct-current power supply configured to maintain the first sheet-like electrode at a negative potential so that atoms attached to the inner surface of the sheet-like electrode undergo self-ionization and to apply a direct-current voltage between the first and second sheet-like electrodes so that a current flows between the first and second sheet-like electrodes, and a direct-current ammeter configured to measure a current flowing due to electrons emitted by the self-ionization of the dissociated atoms attached to the inner surface of the first sheet-like electrode.


Patent
The Doshisha and Arios Inc. | Date: 2013-05-15

A low-cost and compact atomic flux measurement device is provided for measuring the amount of dissociated atomic flux that are produced by discharge and are emitted from a plasma generation cell into a vacuum camber. The atomic flux measurement device of the present invention includes a counter electrode body including a pair of first and second sheet-like electrodes that are arranged substantially parallel to each other with a predetermined spacing between them, a direct-current power supply configured for two purposes that are to maintain the first sheet-like electrode at a negative potential so that atoms attached to the inner surface of the sheet-like electrode undergo self-ionization and to apply a direct-current voltage between the first and second sheet-like electrodes so that a current flows between the first and second sheet-like electrodes, and a direct-current ammeter configured to measure a current flowing due to electrons emitted by the self-ionization of the dissociated atoms attached to the inner surface of the first sheet-like electrode.


Narushima T.,Sugo Co. | Narushima T.,Hokkaido University | Yoshioka T.,Sugo Co. | Miyazaki H.,Sugo Co. | And 3 more authors.
Nippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals | Year: 2012

Non-oxidized metallic copper particles were prepared by plasma irradiation into aqueous solution of cupric sulfate in the presence of gelatin as a protective agent using home-made microwave induced plasma equipment. Then, two different steric structures of ascorbic acid, L-ascorbic acid and isoascorbic acid, were added as reducing auxiliaries. In the case of isoascorbic acid addition, metallic copper particles were obtained by plasma irradiation within about 5 minute. This result suggests that the reduction of copper ion from Cu 2+ to metallic Cu can be succeeded by hydrogen radical generated by plasma in water combination with isoascorbic acid, and without toxic chemical agent such as hydrazine. Additionally, the diameter of copper particles can be controlled by the mount of CuSO 4 · 5H 2O and gelatin. These results were indicated that the plasma in liquid process has possibilities for high-speed and low environmental load process to prepare metallic copper particles. © 2012 The Japan Institute of Metals.


Ohachi T.,Doshisha University | Yamabe N.,Doshisha University | Yamamoto Y.,Doshisha University | Wada M.,Doshisha University | Ariyada O.,Arios Inc.
Journal of Crystal Growth | Year: 2011

A new spiral parallel mesh electrode (PME) is presented to control active nitrogen species in plasma-assisted molecular beam epitaxial (PA-MBE) growth of group III nitrides and their alloys. Direct flux of active nitrogen from radio frequency inductive coupled plasma (rf-ICP) discharge was able to be measured using a mesh electrode for filtering charge particles and electron emission due to the self-ionization of nitrogen atoms on a negatively biased electrode. In situ measurement of direct nitrogen atom fluxes using the spiral PME during PA-MBE growth of GaN and AlN on Si substrates is investigated. A linear rf power dependence of direct flux of active species on atoms such as nitrogen (NN), where N and N were ground and excited atoms, respectively, from a rf-ICP was confirmed by the spiral PME. An indirect flux of nitrogen adsorbed (ADS) atoms (NN) during discharge was also monitored by the spiral PME and received influence of the wall surface of the growth chamber. ADS nitrogen atoms are able to be used for nitridation of Si surface to grow a double buffer layer (DBL) AlN/β-Si3N4/Si. © 2010 Elsevier B.V. All rights reserved.


Yonezawa T.,Hokkaido University | Hyono A.,Hokkaido University | Hyono A.,ARIOS Inc. | Sato S.,ARIOS Inc. | Ariyada O.,ARIOS Inc.
Chemistry Letters | Year: 2010

As a rapid and easy liquid process for preparation of ZnO nanoparticles, we propose here a microwave-induced plasma in water. Generation of plasma in liquid has been achieved at atmospheric pressure without external gas bubbling. After only several minutes of microwave irradiation, about 0.3 g of ZnO nanoparticles was obtained from an aqueous solution of zinc(II) acetate under alkaline conditions. © 2010 The Chemical Society of Japan.


Ohachi T.,Doshisha University | Yamabe N.,Doshisha University | Yamamoto Y.,Doshisha University | Wada M.,Doshisha University | Ariyada O.,Arios Inc.
Physica Status Solidi (C) Current Topics in Solid State Physics | Year: 2011

An atom probe of two parallel electrodes is proposed to monitor adsorbed (ADS) nitrogen atoms in situ during growth of β-Si3N4 using indirect exposure of effusing active nitrogen beam from the radio frequency induction coupled plasma cell. The β-Si3N4 film is a component of a double buffer layer (DBL) AlN(0001)/β-Si3N4/Si(111) to grow high quality the group III nitrides and their alloys on Si. Atom current between the parallel electrodes corresponds to flux of the ADS nitrogen atoms on the inside surface at the atom potential, VA. The ADS atom current received influence of wall and shutter of the cell, because adsorption of nitrogen atom depended wall condition such as temperature and the concentration of adatoms on the wall. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.


Sato S.,Arios Inc. | Mori K.,Arios Inc. | Ariyada O.,Arios Inc. | Atsushi H.,Arios Inc. | And 2 more authors.
Surface and Coatings Technology | Year: 2011

We have conducted a basic study of microwave plasma in liquid at atmospheric pressure. Plasma could be successfully induced by radiated microwave from pointed and ring tungsten electrodes. The tungsten electrode showed a long lifetime of 70 h. Melting and chemical etching of the electrode's top limited the lifetime. Silver cations from silver nitrates could be rapidly and completely reduced to generate metallic silver nanoparticles using this plasma source without any addition of reducing chemical reagents. Optimization of electric conductivity of the reaction solution was not needed. When the material of the electrode was changed to platinum from tungsten, platinum nanoparticles were produced by vaporization into pure water. Both these preparation processes can be expected to produce lower contamination than chemical synthesis. © 2011 Elsevier B.V.


Ohachi T.,Doshisha University | Yamabe N.,Doshisha University | Wada M.,Doshisha University | Ariyada O.,Arios Inc.
Japanese Journal of Applied Physics | Year: 2011

A radio frequency inductively coupled plasma (rf-ICP) nitrogen discharge was investigated to improve group III nitride growth on Si substrates. Two modes of the rf-ICP discharge, low brightness (LB) and high brightness (HB) discharges, were successfully controlled through mode transition. Direct irradiation and indirect irradiation of nitrogen atoms were applied for the growth of group III nitrides. As an application of indirect irradiation of nitrogen atoms, the growth of β-Si3N4 using interface reaction epitaxy (IRE) was studied. As applications of direct irradiation of nitrogen atoms, activity modulation migration-enhanced epitaxy (AM-MEE) and plasma-assisted molecular beam epitaxy (PA-MBE), which are atomic layer epitaxy (ALE) methods, are demonstrated. These growth systems operate to realize a single-growth process from a Si substrate to an AlN or GaN epitaxial layer, i.e., through preparation of a double buffer (DBL) layer of AlN/β-Si 3N4/Si after the growth of IRE β-Si3N 3 and IRE AlN. The electron emission due to the self-ionization of nitrogen atoms on a negatively biased electrode is demonstrated to measure in situ direct and indirect nitrogen atom fluxes during the growth. © 2011 The Japan Society of Applied Physics.

Loading Arios Inc. collaborators
Loading Arios Inc. collaborators