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San Jose, CA, United States

Yao Y.B.,Hong Kong Polytechnic University | Yao Y.B.,King Abdullah University of Science and Technology | Liu W.C.,Hong Kong Polytechnic University | Liu W.C.,Applied MicroStructures | Mak C.L.,Hong Kong Polytechnic University
Journal of Alloys and Compounds | Year: 2012

Samarium (Sm 3+) doped BiFeO 3 (BFO) ceramics were prepared by a modified solid-state-reaction method which adopted a rapid heating as well as cooling during the sintering process. The pyroelectric coefficient increased from 93 to 137 μC/m 2 K as the Sm 3+ doping level increased from 1 mol% to 8 mol%. Temperature dependence of the pyroelectric coefficient showed an abrupt decrease above 80 °C in all samples, which was associated with the increase of electrical conductivity with temperature. This electrical conduction was attributed to oxygen vacancy existing in the samples. An activation energy of ∼0.7 eV for the conduction process was found to be irrespective of the Sm 3+ doping level. On the other hand, the magnetic Néel temperature (T N) decreased with increasing Sm 3+ doping level. On the basis of our results, the effects of Sm doping level on the pyroelectric and electrical properties of the BFO were revealed. © 2011 Elsevier Ltd. All rights reserved.

Applied MicroStructures | Date: 2014-11-12

The present invention is related to carbon-doped metal oxide films. A method of depositing a low friction metal oxide film on a substrate is provided, including: using an atomic layer deposition technique, wherein said metal oxide film is deposited using at least an organo-metallic precursor, and wherein said substrate is at a temperature of 150 C. or lower during deposition of said metal oxide film, whereby a carbon-doped metal oxide film is obtained. The carbon-doped metal oxide films provide a low coefficient of friction, for example ranging from about 0.05 to about 0.4. In addition, the carbon-doped metal oxide films provide anti-stiction properties, where the measured work of adhesion is less than 10 J/m

Applied MicroStructures | Date: 2012-05-22

A vapor delivery apparatus for providing a precursor vapor for a vapor deposition process includes a precursor container for holding a liquid or solid precursor. A first temperature control assembly maintains the precursor container at a first temperature to generate a vapor precursor from the liquid or solid precursor. An isolation valve is coupled to the precursor container, and a specific quantity of the vapor precursor is accumulated in an expansion volume. A fill valve, which is coupled to each of the isolation valve and the expansion volume, controls the flow of the vapor precursor from the precursor container into the expansion volume. A second temperature control assembly maintains the isolation valve at a second temperature greater than the first temperature.

Applied MicroStructures | Date: 2013-08-05

An article having a surface treated to provide a protective coating structure in accordance with the following method: vapor depositing a first layer on a substrate, wherein said first layer is a metal oxide adhesion layer selected from the group consisting of an oxide of a Group IIIA metal element, a Group IVB metal element, a Group VB metal element, and combinations thereof; vapor depositing a second layer upon said first layer, wherein said second layer includes a silicon-containing layer selected from the group consisting of silicon oxide, silicon nitride, and silicon oxynitride; and vapor depositing a third layer upon said second layer, wherein said third layer is a functional organic-comprising layer, wherein said functional organic-comprising layer is a SAM.

Applied MicroStructures | Date: 2013-08-05

A moisture barrier coating for protecting a substrate from moisture, comprises an inorganic layer disposed over the substrate, the inorganic layer comprising an oxide or nitride of an element selected from the group consisting of silicon, aluminum, titanium, zirconium, hafnium and combinations thereof; and an organic silicon-containing layer disposed over the inorganic layer.

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