Sunnyvale, CA, United States
Sunnyvale, CA, United States

Applied Materials, Inc. is an American corporation that supplies equipment, services and software to enable the manufacture of semiconductor, flat panel display, Glass, WEB and solar (crystalline and thin film) products. The company is headquartered in Santa Clara, California in the Silicon Valley. Applied Materials creates and commercializes nanomanufacturing technology used in the production of semiconductor (integrated circuit) chips for electronic gear, flat panel displays for computers, smartphones and television, glass coatings for homes and buildings, web (flexible substrate) coatings for industry and photovoltaic solar cells and modules using both thin film and crystalline (wafer or bulk) photovoltaic technology. Wikipedia.

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Patent
Applied Materials | Date: 2017-02-22

An apparatus for printing on a substrate is disclosed. The apparatus includes a material recovery device (20) and a first linear motor configured for adjusting a distance of the material recovery device (20) with respect to a substrate support (40). Further, a method for printing of a material on a substrate is provided that includes positioning a material recovery device (20) with respect to a substrate support (40) using a first linear motor.


Patent
Applied Materials | Date: 2017-01-18

A process chamber includes a chamber body having a chamber lid assembly disposed thereon, one or more monitoring devices coupled to the chamber lid assembly, and one or more antennas disposed adjacent to the chamber lid assembly that are in communication with the one or more monitoring devices.


Techniques are disclosed for methods and apparatuses for determining when to perform or trigger events. The technique comprises determining a first cost of false positives and a second cost of missed true positives. A Receive Operating Characteristic (ROC) of a prediction model is determined for the occurrence of one or more events. The operational area on the ROC is determined based on the first costs and second costs. A threshold is determined from the ROC and is applied to a detection or prediction function. An event is triggered based on the threshold.


An extreme ultraviolet reflective element and method of manufacture includes: a substrate; a multilayer stack on the substrate, the multilayer stack includes a plurality of reflective layer pairs having a first reflective layer formed from silicon and a second reflective layer formed from molybdenum; a barrier layer formed between the first reflective layer and the second reflective layer with the barrier layer formed from boron, carbon, nitrogen, oxygen, fluorine, sulphur, phosphorous, or a combination thereof; and a capping layer on and over the multilayer stack for protecting the multilayer stack by reducing oxidation and mechanical erosion.


An extreme ultraviolet (EUV) blank production system includes: a substrate handling vacuum chamber for creating a vacuum; a substrate handling platform, in the vacuum, for transporting an ultra-low expansion substrate loaded in the substrate handling vacuum chamber; and multiple sub-chambers, accessed by the substrate handling platform, for forming an EUV mask blank including: a first sub-chamber for forming a multi-layer stack, above the ultra-low expansion substrate, for reflecting an extreme ultraviolet (EUV) light; and a second sub-chamber for forming a bi-layer absorber, formed above the multi-layer stack, for absorbing the EUV light at a wavelength of 13.5 nm provides a reflectivity of less than 1.9%.


A deposition system, and a method of operation thereof, includes: a cathode; a shroud below the cathode; a rotating shield below the cathode for exposing the cathode through the shroud and through a shield hole of the rotating shield; and a rotating pedestal for producing a material to form a carrier over the rotating pedestal, wherein the material having a non-uniformity constraint of less than 1% of a thickness of the material and the cathode having an angle between the cathode and the carrier.


Patent
Applied Materials | Date: 2017-08-23

Embodiments of the present disclosure relate to advanced polishing pads with tunable chemical, material and structural properties, and new methods of manufacturing the same. According to one or more embodiments of the disclosure, it has been discovered that a polishing pad with improved properties may be produced by an additive manufacturing process, such as a three-dimensional (3D) printing process. Embodiments of the present disclosure thus may provide an advanced polishing pad that has discrete features and geometries, formed from at least two different materials that include functional polymers, functional oligomers, reactive diluents, and curing agents. For example, the advanced polishing pad may be formed from a plurality of polymeric layers, by the automated sequential deposition of at least one resin precursor composition followed by at least one curing step, wherein each layer may represent at least one polymer composition, and/or regions of different compositions.


Grant
Agency: European Commission | Branch: H2020 | Program: ECSEL-IA | Phase: ECSEL-18-2015 | Award Amount: 82.27M | Year: 2016

The goal of EnSO is to develop and consolidate a unique European ecosystem in the field of autonomous micro energy sources (AMES) supporting Electronic European industry to develop innovative products, in particular in IoT markets. In summary, EnSO multi-KET objectives are: Objective 1: demonstrate the competitiveness of EnSO energy solutions of the targeted Smart Society, Smart Health, and Smart Energy key applications Objective 2: disseminate EnSO energy solutions to foster the take-up of emerging markets. Objective 3: develop high reliability assembly technologies of shapeable micro batteries, energy harvester and power management building blocks Objective 4: Develop and demonstrate high density, low profile, shapeable, long life time, rechargeable micro battery product family. Objective 5: develop customizable smart recharge and energy harvesting enabling technologies for Autonomous Micro Energy Source AMES. Objective 6: demonstrate EnSO Pilot Line capability and investigate and assess the upscale of AMES manufacturing for competitive very high volume production. EnSO will bring to market innovative energy solutions inducing definitive differentiation to the electronic smart systems. Generic building block technologies will be customizable. EnSO manufacturing challenges will develop high throughput processes. The ENSo ecosystem will involve all the value chain from key materials and tools to many demonstrators in different fields of application. EnSO work scope addresses the market replication, demonstration and technological introduction activities of ECSEL Innovation Action work program. EnSO relates to several of the Strategic Thrusts of ECSEL MASP. EnSO innovations in terms of advanced materials, advanced equipment and multi-physics co-design of heterogeneous smart systems will contribute to the Semiconductor Process, Equipment and Materials thrust. The AMES will be a key enabling technology of Smart Energy key applications.


Grant
Agency: European Commission | Branch: H2020 | Program: ECSEL-IA | Phase: ECSEL-15-2015 | Award Amount: 150.05M | Year: 2016

The TAKE5 project is the next in a chain of thematically connected ENIAC JU KET pilot line projects which are associated with 450mm/300mm development for the 10nm technology node and the ECSEL JU project SeNaTe aiming at the 7nm technology node. The main objective of the TAKE5 project is the demonstration of 5nm patterning in line with the industry needs and the ITRS roadmap in the Advanced Patterning Center at the imec pilot line using innovative design and technology co-optimization, layout and device architecture exploration, and comprising demonstration of a lithographic platform for EUV technology, advanced process and holistic metrology platforms and new materials. A lithography scanner will be developed based on EUV technology to achieve the 5nm module patterning specification. Metrology platforms need to be qualified for 5nm patterning of 1D, 2D and 3D geometries with the appropriate precision and accuracy. For the 5nm technology modules new materials will need to be introduced. Introduction of these new materials brings challenges for all involved deposition processes and the related equipment set. Next to new deposition processes also the interaction of the involved materials with subsequent etch steps will be studied. The project will be dedicated to find the best options for patterning. The project relates to the ECSEL work program topic Process technologies More Moore. It addresses and targets as set out in the MASP at the discovery of new Semiconductor Process, Equipment and Materials solutions for advanced CMOS processes that enable the nano-structuring of electronic devices with 5nm resolution in high-volume manufacturing and fast prototyping. The project touches the core of the continuation of Moores law which has celebrated its 50th anniversary and covers all aspects of 5nm patterning development.


Grant
Agency: European Commission | Branch: H2020 | Program: ECSEL-RIA | Phase: ECSEL-06-2015 | Award Amount: 23.11M | Year: 2016

The objective of the 3DAM project is to develop a new generation of metrology and characterization tools and methodologies enabling the development of the next semiconductor technology nodes. As nano-electronics technology is moving beyond the boundaries of (strained) silicon in planar or finFETs, new 3D device architectures and new materials bring major metrology and characterization challenges which cannot be met by pushing the present techniques to their limits. 3DAM will be a path-finding project which supports and complements several existing and future ECSEL pilot-line projects and is linked to the MASP area 7.1 (subsection More Moore). Innovative demonstrators and methodologies will be built and evaluated within the themes of metrology and characterization of 3D device architectures and new materials, across the full IC manufacturing cycle from Front to Back-End-Of-Line. 3D structural metrology and defect analysis techniques will be developed and correlated to address challenges around 3D CD, strain and crystal defects at the nm scale. 3D compositional analysis and electrical properties will be investigated with special attention to interfaces, alloys and 2D materials. The project will develop new workflows combining different technologies for more reliable and faster results; fit for use in future semiconductor processes. The consortium includes major European semiconductor equipment companies in the area of metrology and characterization. The link to future needs of the industry, as well as critical evaluation of concepts and demonstrators, is ensured by the participation of IMEC and LETI. The project will directly increase the competitiveness of the strong Europe-based semiconductor Equipment industry. Closely connected European IC manufacturers will benefit by accelerated R&D and process ramp-up. The project will generate technologies essential for future semiconductor processes and for the applications enabled by the new technology nodes.

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