Apollon Solar | Date: 2013-11-21
A method for controlling the internal pressure of a photovoltaic module having a front plate, rear plate, photovoltaic cells, electrical interconnection conductors, and peripheral seal, in which the conductors are in pressure contact with the cells, under the effect of a force resulting from a vacuum prevailing inside the module. The method includes: a) gradually reducing the pressure of a gas quantity around the module; b) detecting, during step a), a physical parameter representative of the actual pressing of the interconnection conductors against the cells; and c) determining a value of the internal pressure of the module on the basis of a variation in the physical parameter. The control facility comprises an enclosure for receiving the module inside a gas quantity, the enclosure including elements for: reducing the pressure of this gas quantity, detecting a physical parameter representative of the actual pressing, and determining the internal pressure of the module.
Forster M.,Apollon Solar |
Forster M.,INSA Lyon |
Forster M.,Australian National University |
Fourmond E.,INSA Lyon |
And 6 more authors.
Applied Physics Letters
We study the boron-oxygen defect in Si co-doped with gallium and boron with the hole density 10 times higher than the boron concentration. Instead of the linear dependence of the defect density on the hole density observed in boron and phosphorus compensated silicon, we find a proportionality to the boron concentration. This indicates the participation of substitutional, rather than interstitial, boron in the defect complex. The measured defect formation rate constant is proportional to the hole density squared, which gives credit to latent defect models against defect reactions limited by the diffusion and trapping of oxygen dimers by boron atoms. © 2012 American Institute of Physics. Source
Apollon Solar | Date: 2010-01-25
Interplex Soprec and Apollon Solar | Date: 2011-02-07
Apollon Solar and Australian National University | Date: 2013-02-28
A photovoltaic device includes a first semiconducting area having an N-doped silicon base and a second semiconducting area having a P-doped silicon base. The two semiconducting areas are configured to form a PN junction. The first semiconducting area is devoid of boron and includes a concentration of P-type doping impurities that is at least equal to 20% of the concentration of N-type doping impurities.