Lyon, France
Lyon, France

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Agency: Cordis | Branch: H2020 | Program: RIA | Phase: FoF-13-2015 | Award Amount: 5.64M | Year: 2015

EcoSolar envisions an integrated value chain to manufacture and implement solar panels in the most ecologic way by maximising resource efficiency, taking into account reuse of materials during production and repurposing solar panel components at end of life stage. EcoSolar will demonstrate that during the lifetime of a solar electricity producing field, individual panels can be monitored, allowing to identify defaulting panels at an early stage, replacing or repairing them and thus to increase the overall energy yield. In WP1, SINTEF&Norsun will work on recovery & reuse during silicon ingot crystallisation, addressing recovery of argon purge gas and work with Steuler on reusable crucibles. In WP2 Garbo will recover Si-kerf-loss during wafering, and with SINTEF work on potential reuse applications, like as Si-feedstock in crystallisation processes, or as resource in crucible manufacturing or lithium ion battery production. In WP3, ISC&SoliTek will look into potential for re-using process water; reducing material resources, like chemicals and silver, by smarter solar cell design, more efficient processes and recovery and reuse of chemicals; AIMEN will develop solar cell monitoring and repair for inline processing in an industrial plant, to enable remanufacturing. In WP4 Apollon will use a module design that results in reduced bill of materials, enables remanufacturing and reuse of components from modules that showed failures after assembly or have been identified as malfunctioning in operating PV installations, based on integrated diagnosis techniques for the detection of failure modes. Bifa will collect data from all previous WPs to assess environmental impact of the intended innovations (WP5). Bifa will identify waste streams that are costly and hard to recycle and find opportunities to repurpose those waste products. BCC will disseminate the results and will support the partners with the exploitation and replication potential of the results (WP6).

Apollon Solar, Efd Induction Sa and Cyberstar | Date: 2012-02-09

A temperature gradient is established in a crystallization crucible by means of a heat source and a cooling system. The cooling system comprises a heat exchanger and an adjustable additional heat source. The cooling system is preferably formed by an induction coil cooled by a coolant liquid circulating in the induction coil and by an electrically conductive induction susceptor positioned between the crucible and induction coil. The fabrication process comprises heating the crucible via the top and controlling heat extraction from the crucible downwards by means of the heat exchanger and by means of regulation of the adjustable additional heat source.

Fourmond E.,Lyon Institute of Nanotechnologies | Forster M.,Lyon Institute of Nanotechnologies | Forster M.,Apollon Solar | Einhaus R.,Apollon Solar | And 3 more authors.
Energy Procedia | Year: 2011

A number of ingots were grown from solar grade poly Silicon, to which Boron, Phosphorous and Gallium were added as dopants. The introduction of Gallium as a third dopant allowed for a better control of the resistivity and the doping type during ingot growth. Measured resistivity in this material is shown to be systematically higher than that calculated using Scheil's law for the dopants distribution and Klaassen's model for the majority carrier mobility. This resistivity underestimation is shown to be, at least partially, due to a reduction of the majority carrier mobility in highly compensated Si compared to Klaassen's model. A similar reduction is observed for the minority carrier mobility. We propose a correction term in the mobility calculation, to allow a greater accuracy in the prediction of the resistivity and mobility of compensated solar grade silicon. © 2010 Published by Elsevier Ltd.

INSA Lyon, Apollon Solar and French National Center for Scientific Research | Date: 2012-03-09

A process for manufacturing silicon-based nanoparticles by electrochemical etching of a substrate, wherein the substrate is a metallurgical-grade or upgraded metallurgical-grade silicon, the substrate including an impurity content greater than 0.01%.

Siltronix and Apollon Solar | Date: 2011-07-01

A feedstock of semiconductor material is placed in a crucible. A closed sacrificial recipient containing a dopant material is placed in the crucible. The content of the crucible is melted resulting in incorporation of the dopant in the molten material bath. The temperature increase is performed under a reduced pressure.

This electrical connection assembly is used for a photovoltaic cell (4) having rear electrical contacts. The assembly comprises at least one spacer-plate (10) of electrically insulating material suitable for having the rear face of the cell bearing against a first side (116) thereof in a position in which the connection terminals (46, 48) of the cell (4) are in register with through orifices (120, 122) in the spacer-plate (10). The assembly also includes at least two ribbons (20) of electrically conductive material arranged on a second side of the spacer-plate (10), opposite from the first side (116), and provided with contact elements (210, 212) suitable for making electrical contact with the connection terminals (46, 48) of the cell (4) through the orifices (120, 122) in the spacer-plate. Electrical contact between the contact elements (210, 212) and the connection terminals (46, 48) is established without soldering, under the effect of a resilient force.

Apollon Solar and Australian National University | Date: 2013-02-28

A photovoltaic device includes a first semiconducting area having an N-doped silicon base and a second semiconducting area having a P-doped silicon base. The two semiconducting areas are configured to form a PN junction. The first semiconducting area is devoid of boron and includes a concentration of P-type doping impurities that is at least equal to 20% of the concentration of N-type doping impurities.

The device for melting and purifying of a silicon feedstock comprises a crucible arranged inside a sealed chamber. A thermal gradient can be applied to the crucible by an arranged heat exchanger and a heating device. The device likewise comprises a device for reducing the pressure inside the chamber to a value lower than 10^(2 )mbar and a device for stirring the silicon in the crucible. The silicon feedstock successively undergoes degassing and pre-heating to atmospheric temperature, and then melting and low pressure, high temperature purification. Once the low-pressure purification step has been completed, directed crystallization is carried out.

A method for controlling the internal pressure of a photovoltaic module having a front plate, rear plate, photovoltaic cells, electrical interconnection conductors, and peripheral seal, in which the conductors are in pressure contact with the cells, under the effect of a force resulting from a vacuum prevailing inside the module. The method includes: a) gradually reducing the pressure of a gas quantity around the module; b) detecting, during step a), a physical parameter representative of the actual pressing of the interconnection conductors against the cells; and c) determining a value of the internal pressure of the module on the basis of a variation in the physical parameter. The control facility comprises an enclosure for receiving the module inside a gas quantity, the enclosure including elements for: reducing the pressure of this gas quantity, detecting a physical parameter representative of the actual pressing, and determining the internal pressure of the module.

The invention relates to a photovoltaic unit (1A, 1B) including a supporting plate and a photovoltaic component (4A, 4B) that is arranged on the supporting plate and comprises an input connection element (6A, 6B) and an output connection element (8A, 8B). The unit further includes at least one first auxiliary circuit (14A, 14B), which is arranged on the supporting plate and can conduct electric current, and a first and a second connection terminal board (10A, 12A, 10B, 12B).

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