Lan S.,Apollo Precision Group Fujian |
Zhao H.,Apollo Precision Group Fujian |
Yang N.,Apollo Precision Group Beijing |
Qu M.,Apollo Precision Group Fujian |
And 9 more authors.
Taiyangneng Xuebao/Acta Energiae Solaris Sinica | Year: 2015
This work focuses on the development of large area deposition system for nanocrystalline silicon (nc-Si) film deposition. In the equipment design part, the influence from different RF frequencies and gas box structure (closed and open)on the film deposition was studied; in the process optimization part, deposition pressure, electrode distance, RF power density etc. were studied in terms of optimization of film deposition rate, thickness non-uniformity, crystalline ratio, and crystalline ratio non-uniformity. High quality large area nc-Si film with high deposition rate of 5 Å/s, crystalline ratio around 60% and non-uniformity less than 10% was attained by optimized configuration of gas box and fabrication process of nc-Si films. Based on this high quality nc-Si film, 154.97 W output power is achieved on 1.1 m×1.4 m a-Si/nc-Si tandem PV module, of which the total area efficiency is 10.1%. ©, 2015, Science Press. All right reserved.