Culver City, CA, United States
Culver City, CA, United States
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Patent
APIC Corporation | Date: 2015-02-27

A technology capable of improving the production yield of molded articles. A film is supplied to a die surface of a resin molding die set. Next, the film is adhered to the die surface and caused to be in a state of being separated from the die surface at a corner section of a cavity recess. Next, a die set is closed to clamp the film. Next, a resin filling the interior of the cavity recess is thermoset, on the film provided therebetween, while adhering the film to the corner section.


Provided is a resist film forming device which uses an electrostatic spray device which is capable of forming a thin film with a uniform thickness on a workpiece. A resist film forming device (100), which forms a resist film (108) on a substrate by electrostatic spraying, comprises: a nozzle (102) which, upon application of a prescribed voltage, sprays liquid particles which form the raw material for a resist film (108) toward a substrate (105) having stepped portions (105a); a driving means (111) for causing relative movement of the substrate (105) or the nozzle (102); and a control means (110) for controlling such that the resist film (108) is formed on the substrate (105) having the stepped portions (105a) by the liquid particles.


Patent
APIC Corporation | Date: 2013-07-10

The method is capable of resin-molding one side face of a work (W) in a molding die set (1), in which the work (W) is sucked and held on at least one of clamping faces and resin-molded in a cavity concave section (4). The method comprises the steps of: sucking and holding a release film (12) which covers at least one of the clamping faces of the molding die set (1); setting the work (W) in the molding die set (1); sucking the other side face of the work (W) through a work sucking hole (12g) of the release film (12), which is formed before or after holding the release film (12), so as to hold the work (W) on the clamping face; closing the molding die set (1) so as to clamp the work (W); and pressurizing and heating the resin (24), which has been accommodated in the cavity concave section (4), with resin (24).


Provided is a resist film forming device which uses an electrostatic spray device which is capable of forming a thin film with a uniform thickness on a workpiece. A resist film forming device (100), which forms a resist film (108) on a substrate by electrostatic spraying, comprises: a nozzle (102) which, upon application of a prescribed voltage, sprays liquid particles which form the raw material for a resist film (108) toward a substrate (105) having stepped portions (105a); a driving means (111) for causing relative movement of the substrate (105) or the nozzle (102); and a control means (110) for controlling such that the resist film (108) is formed on the substrate (105) having the stepped portions (105a) by the liquid particles.


Patent
University of Southern California, California Institute of Technology and APIC Corporation | Date: 2013-06-07

A microfluidic fluid separator for separating target components of a fluid by filtration is described. Methods for separating target components of a fluid by filtration and methods for processing blood on a large scale with the microfluidic fluid separator are provided.


Grant
Agency: Department of Defense | Branch: Navy | Program: SBIR | Phase: Phase I | Award Amount: 79.99K | Year: 2015

An integrated analog optical transmitter combining a high power, low RIN laser and external modulator will be developed using a fully monolithic chip design or a free space coupled package with a laser and modulator chip. Optical, mechanical, and RF design analysis will be performed in Phase I to identify the optimum solution.


Grant
Agency: Department of Defense | Branch: Navy | Program: SBIR | Phase: Phase I | Award Amount: 79.99K | Year: 2014

We propose to develop high-performance 1550 nm semiconductor lasers with linewidth less than 1 kHz, output power greater than 100 mW, RIN below -175 dBc/Hz. We will use InGaAlAs system instead of the InGaAsP system as the laser active layer, and will design the optimum laser structure to reduce the laser threshold current and RIN, and to push the relaxation oscillation peak over 40 GHz. We will use optical feedback or electrical feedback to reduce laser linewidth to 1 kHz. The applicants have many year experiences in the design and fabrication of semiconductor lasers with low RIN, high power, and narrow linedwidth. Our facilities are good enough to complete the fabrications and tests of the lasers.


Grant
Agency: Department of Defense | Branch: Navy | Program: SBIR | Phase: Phase I | Award Amount: 79.99K | Year: 2014

A waveguide-coupled, uni-traveling carrier (UTC) photodetector will be used as a single chip balanced optical receiver. The photodetector design is derived from a high saturation current and high dynamic range diode developed for analog RF over fiber applications. We propose a highly linear balanced receiver that is implemented in compound semiconductor and packaged in a ruggedized package. The device can be used for RF over fiber transmission for diverse military platforms.


Patent
APIC Corporation | Date: 2013-03-15

The subject matter disclosed herein relates to a photonic module comprising: a plurality of metal pads to receive CMOS integrated circuit (IC) chips to be mounted on a silicon-on-insulator (SOI) wafer; electrical interface circuits to receive electrical signals from the CMOS IC chips and to modify the electrical signals; optical drivers to receive the modified electrical signals and to convert the modified electrical signals to optical signals; and a photonic layer on the SOI wafer comprising silicon optical waveguides and silica optical waveguides to transmit or receive the optical signals for communication among the CMOS IC chips.


Patent
APIC Corporation | Date: 2013-03-15

The subject matter disclosed herein relates to a photonic module comprising: a silicon-on-insulator (SOI) wafer; one or more photonic components on the SOI wafer; a plurality of metal pads to receive integrated circuit (IC) chips to be mounted on the SOI wafer; silicon optical waveguides to transfer optical signals among terminals of individual the IC chips, wherein the silicon optical waveguides comprise portions of the SOI wafer; and silica optical waveguides to transfer optical signals among terminals of different the IC chips.

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