Unterpremstatten, Austria
Unterpremstatten, Austria

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A biometric sensor arrangement (10) comprises a first radiation source (11), a second radiation source (12) that is implemented as a flash radiation source and a driver (13) coupled to the first and the second radiation source (11, 12) and configured to selectively operate the first and the second radiation source (11, 12). Moreover, the biometric sensor arrangement (10) comprises a photosensor (16) and a signal conditioning unit (18) coupled to the photosensor (16) and designed to provide a biometric signal (SB).


A bolometer (10) comprises a first and a second suspension beam (12, 13) and a semiconductor portion (11) that is suspended by the first and the second suspension beam (12, 13) and comprises a first region (17) of a first conductivity type and a second region (18) of a second conductivity type. The first region (17) comprises a first triangle (21) or at least two stripes (40, 41) or islands (60, 61) which each contribute to a non-short-circuited diode (20) with the second region (18).


Grant
Agency: European Commission | Branch: H2020 | Program: ECSEL-IA | Phase: ECSEL-02-2014 | Award Amount: 87.61M | Year: 2015

The key objective of PowerBase Enhanced substrates and GaN pilot lines enabling compact power applications is to ensure the availability of Electronic Components and Systems (ECS) for key markets and for addressing societal challenges, aiming at keeping Europe at the forefront of the technology development, bridging the gap between research and exploitation, creating economic and employment growth in the European Union. The project PowerBase aims to contribute to the industrial ambition of value creation in Europe and fully supports this vision by addressing key topics of ECSEL multi annual strategic plan 2014. By positioning PowerBase as innovation action a clear focus on exploitation of the expected result is primary goal. To expand the limits in current power semiconductor technologies the project focuses on setting up a qualified wide band gap GaN technology Pilot line, on expanding the limits of todays silicon based substrate materials for power semiconductors, improving manufacturing efficiency by innovative automation, setting up of a GaN compatible chip embedding pilot line and demonstrating innovation potential in leading compact power application domains. PowerBase is a project proposal with a vertical supply chain involved with contributions from partners in 7 European countries. This spans expertise from raw material research, process innovation, pilot line, assembly innovation and pilot line up to various application domains representing enhanced smart systems. The supporting partners consist of market leaders in their domain, having excellent technological background, which are fully committed to achieve the very challenging project goals. The project PowerBase aims to have significant impact on mart regions. High tech jobs in the area of semiconductor technologies and micro/nano electronics in general are expressed core competences of the regions Austria: Carinthia, Styria, Germany: Sachsen, Bavaria and many other countries/ regions involved.


Grant
Agency: European Commission | Branch: H2020 | Program: RIA | Phase: ICT-27-2015 | Award Amount: 4.90M | Year: 2016

Silicon photonics is expected to leverage-off many of the advances made in CMOS electronics. International R&D efforts in this field have so far been mainly focused on the silicon-on-insulator (SOI) photonic integrated circuit (PIC) technology platform because it is predestined for datacom, high-performance computing and telecom applications. However, SOI based integrated optical waveguides cannot be used for the VIS/NIR <1.1m wavelength region, which is important for life sciences and health related applications and, thus, offers a huge potential for PIC technology. To this end, a novel CMOS compatible low-loss silicon nitride waveguide based PIC technology platform will be developed in OCTCHIP and directly applied to the a strong business case in the field of optical coherence tomography (OCT) for ophthalmology. OCT is a revolutionizing in-vivo 3D imaging technique for non-invasive optical biopsy addressing medical needs with early diagnosis and reduction of healthcare cost. OCT has proven its value primarily in ophthalmology and cardiology but recently also in a variety of other medical fields. However, wide adoption has not taken place due to size and cost limitations as well as non-existence of miniaturized devices. The PIC technology developed in OCTCHIP will make a new generation of OCT systems possible with step-changes in size and cost beyond state-of-the-art. The monolithic integration of silicon nitride optical waveguides, silicon photodiodes and electronics combined with the hybrid integration of a III-V laser source will enable a compact, low-cost and maintenance free solution. OCTCHIP will contribute to radically transform OCT towards widespread adoption in point-of-care diagnostics for the early diagnosis of retinal pathologies, which are leading causes for blindness. The endeavor is strongly driven by company partners with strong expertise in the fields of silicon foundry process technology, miniaturized laser sources, and OCT system integration.


PLASMOfab aims to address the ever increasing needs for low energy, small size, high complexity and high performance mass manufactured PICs by developing a revolutionary yet CMOS-compatible fabrication platform for seamless co-integration of active plasmonics with photonic and supporting electronic. The CMOS-compatible metals Aluminum, Titanium Nitride and Copper, will be thoroughly investigated towards establishing a pool of meaningful elementary plasmonic waveguides on co-planar photonic (Si, SiO2 and SiN) platforms along with the associated photonic-plasmonic interfaces. The functional advantages of PLASMOfab technology will be practically demonstrated by developing two novel functional prototypes with outstanding performances: 1) a compact, plasmonic bio-sensor for label-free inflammation markers detection with multichannel capabilities and record-high sensitivity by combining plasmonic sensors with electrical contacts, Si3N4 photonics, high-speed biofunctionalization techniques and microfluidics 2) a 100 Gb/s NRZ transmitter for datacom applications by consolidating low energy and low footprint plasmonic modulator and ultra high-speed SiGe driving electronics in a single monolithic chip. The new integration technology will be verified through wafer-scale fabrication of the prototypes at commercial CMOS fabs, demonstrating volume manufacturing and cost reduction capabilities. PLASMOfab technology will be supported by an EDA software design kit library paving the way for a standardized, fabless plasmonic/photonic IC eco-system.


Grant
Agency: European Commission | Branch: H2020 | Program: IA | Phase: FTIPilot-1-2015 | Award Amount: 4.28M | Year: 2016

HIOS (Highly Integrated Optoelectronic Sensor) aims to develop and to launch worlds first light sensor with fully integrated optical stack. The fully integrated optically stack technology which will be developed in HIOS project will be the technology enabler which brings the highly integrated optoelectronic sensor to the market. The sensors which will be enabled in the first step are single band and multi band light sensors, namely Ambient Light Sensor and derivate such as UV Sensor & Color Sensor. Three main markets which will be addressed are the Wearable, Low Cost Consumer (smart phones, cellular) & Smart Lighting Market. ams already offers prior art TSL2584TSV which is industrys first ambient light sensor with 3D/TSV and single filter integrated at wafer level. In HIOS project the consortium wants to move one step further to ensure also the future competitiveness and keep the market leadership in Europe. HIOS project wants to integrate the full optical stacks including multiple filters, lenses and apertures for the first time and wants to provide a high volume production environment for 3D/TSV \ Filters \ Wafer Level Package. The main technical innovations will be Filter tool and processes developed to achieve industrys tightest filter specifications, Wafer Level Molding tool modified by adding new alignment system to achieve, novel patented lense design and wafer level mold process, filters, lenses and apertures integrated at Wafer Level for the first time and industrys lowest alignment tolerances as required by the applications. The expected outcomes are a Single band and multi-band light sensors smallest size and lowest system cost at best optical performance (ambient light sensor and derivatives such as color sensor and UV sensor) and an Equipment which enabling this new application and many other applications; WLM- tightest overlay control; Filter tightest pass band width control; low stress filter deposition to enable multiple filters.


Grant
Agency: European Commission | Branch: H2020 | Program: ECSEL-IA | Phase: ECSEL-15-2015 | Award Amount: 65.27M | Year: 2016

The EU has set the stage to empower semiconductor manufacturing in Europe being one of the key drivers for innovation and employment and creator for answers to the challenges of the modern society. Aim of IoSense is to boost the European competitiveness of ECS industries by increasing the pilot production capacity and improving Time-to-Market for innovative microelectronics, accomplished by establishing three fully connected semiconductor pilot lines in Europe: two 200mm frontend (Dresden and Regensburg) and one backend (Regensburg) lines networking with existing highly specialized manufacturing lines. Focus is the availability of top innovative, competitive sensors and sensor systems Made in Europe for applications in Smart Mobility, Society, Energy, Health and Production. Today competitors are already involved in the development of sensor systems for applications in the emerging Internet of Things. But there is a significant gap between those forces and the capabilities to bring ideas into the high volume market fast enough. IoSense will close this gap by providing three modular flexible pilot lines being seamless integrated in the IoT value crating networks and ready to manufacture each kind of sensor system prototypes. IoSense will increase the manufacturing capacity of sensor/MEMS components in the involved pilot lines by factor of 10 while reducing manufacturing cost and time by 30%. IoSense is designed to enable focused development work on technological and application oriented tasks combining with market orientation. Design to Market Needs will be accomplished by customer involvement, embedding all required functionality besides sensors. Finally, the time for idea-to-market for new sensor systems is intended to be brought down to less than one year. As a result, semiconductor manufacturing will get a new boost in Europe enabling the industry with competitive solutions, securing employment and providing answers to the upcoming challenges in the IoT era.


Grant
Agency: European Commission | Branch: H2020 | Program: MSCA-ITN-ETN | Phase: MSCA-ITN-2015-ETN | Award Amount: 3.87M | Year: 2016

STREAM is a 4-year multi-site training network that aims at career development of Early Stage Researchers (ESRs) on scientific design, construction manufacturing and of advanced radiation instrumentation. STREAM targets the development of innovative radiation-hard, smart CMOS sensor technologies for scientific and industrial applications. The platform technology developed within the project will be tested in the demanding conditions posed by the CERN LHC detectors environment as well as European industry leaders in field of CMOS imaging, electron microscopy and radiation sensors. This leveraging factor will allow to fine-tune the technology to meet the requirements of industrial application cases on demand such as electron microscopy and medical X-ray imaging, as well as pathway towards novel application fields such as satellite environments, industrial X-ray systems and near-infrared imaging. The project will train a new generation of creative, entrepreneurial and innovative early-stage researchers and widen their academic career and employment opportunities. The STREAM consortium is composed of 10 research organisations and 5 industrial partners; the network will provide training to 17 ESRs. STREAM structures the research and training in four scientific work-packages which span the whole value-chain from research to application: CMOS Technologies Assessment, Smart Sensor Design and Layout, Validation and Qualification, Technology Integration, and Valorization.


Grant
Agency: European Commission | Branch: H2020 | Program: RIA | Phase: ICT-25-2015 | Award Amount: 2.19M | Year: 2016

Nanonets2Sense proposes a new technological approach, where random networks of nanowires, called nanonets (NN), allow biosensors for medical applications to be integrated at low cost with a 3D integration scheme. The final objective of the project is to demonstrate 3D above-IC integration of nanonet-based sensing devices on a CMOS platform. By using nanonets as sensing material, our synergetic approach retains the advantages of nanowires (NW) properties without the associated technological burden. With a smart combination of bottom-up and top-down technologies and a low processing temperature (<400C) compatible with CMOS integration, it allows 3D integration into a compact sensor, where the sensing element, which is exposed to breath or biofluids, is integrated above the CMOS detection circuit, which is naturally protected. Nanonets2Sense will address all material, device and circuit issues. It will develop the integration process that allows the 3D above-IC integration of NN-based sensing devices on a CMOS platform, optimize sensor performance by engineering nanonet properties and device dimensions, analyse NN-based devices operation and performance and optimize readout accordingly, demonstrate the viability of the integration approach by fabricating a proof-of-concept integrated sensor that realizes 3D SoC integration of a NN-based sensing device with its CMOS read-out. Nanonets2Sense is thus providing a new technological building block to enhance CMOS chip functionality with biosensing capability. It combines high performance at low cost and the impact is enhanced by the fact that the approach is generic and can be adapted to a large variety of NW and target molecules. Nanonets2Sense relies on well recognized European partners, including academic, SME and large company, which represent the whole chain from basic and applied research to foundry and products development, ensuring that exploitation will combine sounded physical concepts with industrial vision.


Grant
Agency: European Commission | Branch: H2020 | Program: RIA | Phase: ICT-27-2015 | Award Amount: 3.84M | Year: 2015

Cloud storage and computing, big data analytics and social media are driving the need for higher bandwidth communications in data centres (DCs). Concurrently, disaggregation and virtualization trends in the DC are forcing the traffic to be between servers and storage elements in the east-west direction. These changes require massive switching capabilities from the discrete switch elements. However, the technology is rapidly reaching a limit. The result is a multi-layered DC topology with high power consumption and long latency. The L3MATRIX project provides novel technological innovations in the fields of silicon photonics (SiP) and 3D device integration. The project will develop a novel SiP matrix with a scale larger than any similar device with more than 100 modulators on a single chip and will integrate embedded laser sources with a logic chip thus breaking the limitations on the bandwidth-distance product. Use of embedded laser sources and integration with a full logic CMOS chip are innovative steps that will have a profound effect on the European market as these technologies will make a noticeable change in the power consumption, performance and cost of DCs. A novel approach will be used with embedded III-V sources on the SOI substrate which will eliminate the need to use an external light source for the modulators. L3MATRIX provides a new method of building switching elements that are both high radix and have an extended bandwidth of 25 Gb/s in single mode fibres and waveguides with low latency. The power consumption of DC networks built with these devices is 10-fold lower compared to the conventional technology. The outcome of this approach is that large networks, in the Pb/s scale can be built as a single stage, non-blocking network. The single mode nature of the SiP chip allows scaling the network to the 2000 m range required in modern DCs.

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