Ammono SA Prusa 3 00 493 Warsaw Poland

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Ammono SA Prusa 3 00 493 Warsaw Poland

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Serafinczuk J.,Wroclaw University of Technology | Kucharski R.,Ammono SA Prusa 3 00 493 Warsaw Poland | Zajac M.,Ammono SA Prusa 3 00 493 Warsaw Poland | Gotszalk T.P.,Wroclaw University of Technology | Kudrawiec R.,Wroclaw University of Technology
Crystal Research and Technology | Year: 2015

In this paper we show the structural parameters and structural anisotropy of the bulk GaN substrates of various crystallographic orientations (00.1), (10.0), (11.0) and (20.1) obtained by ammonothermal method. The structural parameters were investigated using high resolution X-Ray Diffraction. Perfect crystalline structure manifests in very narrow peaks in X-ray rocking curves. The full width at half maximum (FWHM) values of 16 and 18 arcsec for the symmetrical and asymmetrical peaks, respectively, have been observed. In addition, we observed structural anisotropy in the non-polar and semi-polar crystals, depending on the orientation of the sample relative to the X-ray beam. It is conducted that this anisotropy is a intrinsic property of non-polar and semi-polar GaN substrates. In this paper we show that GaN substrates of various crystallographic orientations (00.1), (10.0), (11.0) and (20.1), obtained by ammonothermal method have very good crystal quality. Structural parameters for these substrates are determined and compared with other GaN substrates. In addition, we observed structural anisotropy in the non-polar and semi-polar crystals, depending on the orientation of the sample relative to the X-ray beam. This anisotropy is as an intrinsic property of non-polar and semi-polar GaN crystals. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

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