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Ardmore, OK, United States

Agency: Department of Commerce | Branch: National Institute of Standards and Technology | Program: SBIR | Phase: Phase I | Award Amount: 100.00K | Year: 2015

methyst Research Inc. will design, fabricate and test a high uniformity, large area, low noise infrared trap-detector detector for the 1- 4.5 μm wavelength range. This state of the art detector will have a large area (e.g., 1-1.8 cm diameter active area) with a spatial variability of internal quantum efficiency of less than 0.1 % between 1 μm and 4.5 μm. In addition, the internal quantum efficiency of the detectors (i.e., the device efficiency after taking into account the radiation loss due to front-surface reflection) will be close to unity. The Phase I effort will consist of a proof-of-principle demonstration of large area, high-uniformity photodiodes that operate at 1 to 3 μm wavelengths.

The invention is directed to ion implantation. Ion implantation is a process whereby energetic ions are used to uniformly irradiate the surface of a materialtypically a semiconductor wafer. Either atomic or molecular ions are created in an ion source and then extracted for analysis (e.g. by magnetic separation) to ensure the purity of the ion beam. Post-analysis acceleration and scanning of the beam is done prior to sample irradiation. Each dopant-type acts, in general, to increase the conductivity of the silicon.

Amethyst Research Inc. | Date: 2011-06-08

An apparatus and method for hydrogenating a sample, such as a semiconductor wafer. The invention utilizes a top electrode comprising a UV-transparent dielectric and a metal contact to provide an electric field to the sample while the sample is irradiated with UV light and hydrogenated with a hydrogenating gas or gasses. The field may be applied to the sample at a number of different pressures, temperatures and concentrations of gas to manipulate the rate and type of hydrogenation. Further, the method of hydrogenating the sample may be used in conjunction with masking and etching techniques.

Apparatus and method to improve the operating parameters of HgCdTe-based optoelectric devices by the addition of hydrogen to passivate dislocation defects. A chamber and a UV light source are provided. The UV light source is configured to provide UV radiation within the chamber. The optoelectric device, which may comprise a HgCdTe semiconductor, is placed into the chamber and may be held in position by a sample holder. Hydrogen gas is introduced into the chamber. The material is irradiated within the chamber by the UV light source with the device and hydrogen gas present within the chamber to cause absorption of the hydrogen into the material.

Amethyst Research Inc. | Date: 2010-09-21

An apparatus and method for improving the electrical conductivity of a thermoelectric material, particularly a material comprising polysilicon nanowires. The method comprises hydrogenation of the device to improve the electrical conductivity of the device with negligible change to the thermal conductivity. Hydrogenation of the thermoelectric device may be accomplished using several techniques, including UV-assisted hydrogenation in a vacuum chamber.

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