Corbeil-Essonnes, France
Corbeil-Essonnes, France

Altis Semiconductor is an independent French company resulting from IBM Microelectronic . As a European specialty silicon foundry, Altis Semiconductor is a player in the semiconductor market in Europe. The company is currently serving several markets in the automotive, industrial, computer, consumer, security, micro-controllers, networking and wireless market segments. Wikipedia.


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NiFe-seeded magnetic tunnel junctions (MTJs) of IrMn/CoFe/MgO/CoFeB were successfully formed by radically oxidizing a thin Mg layer. Room temperature (RT) tunnel magnetoresistance (TMR) of up to 211 ± 10% was obtained and found to be strongly dependent on the thickness of the NiFe seed layer. High resolution transmission microscopy (HRTEM), atomic force microscopy (AFM), X-ray diffraction (XRD), and magneto-optic Kerr effect (MOKE) analyses performed on NiFe/IrMn bilayer systems revealed that the IrMn(111)-fcc texture, grain size, surface roughness (rms), and exchange-biasing field (H ex) were strongly affected by the thickness of the NiFe seed layer. A critical NiFe thickness (tc ≈ 12 Å) was found: For t NiFe ≤ t c, the IrMn showed a very poor (111)-fcc texture with reduced grain size, very smooth surface, and reduced H ex. For t NiFe > t c, the IrMn showed a complete opposite behavior: much enhanced (111)-fcc texture with larger grain size, rougher surface, and larger H ex. For MTJ-based IrMn systems, a striking behavior is reported: larger TMRs and lower tunnel junction resistance (RA) products are obtained for t NiFe ≤ t c while lower TMRs and larger RAs are obtained for t NiFe > t c. © 2012 The Japan Society of Applied Physics.


Ibe H.,Altis Semiconductor
Nihon Enerugi Gakkaishi/Journal of the Japan Institute of Energy | Year: 2010

In 2009, Japanese government has proposed the economic recovery policy which adverts to the "urban mine." One of it's purpose is to recycling of waste plastic from urban areas. It is very reasonable but is unperformed efficiently. In this review, I will discuss the possibility of the plastic liquefaction technology to the urban oil field. It has come to be feasible to make oil from waste plastics in these days. It will be more effective if the tax system for the sale of the cracked oil is studied. Heavy oil (waxy oil) and light oil (naphtha) made from the waste plastics can be valuable resource for near future on the progress of the study of social system. The feedstock recycle (the product is light oil) must be promoted. Japan is superior to other countries in such technology, so we must assist the recycle technology of the foreign countries as Asian countries.


A microelectronic device with programmable memory (10) includes a first metallic electrode (2) deposited at least in part on a substrate (1), a doped chalcogenide layer (3) deposited on the first metallic electrode (2) and a second metallic electrode (4) deposited on the doped chalcogenide layer (3). The device further has an intermediate layer (5) positioned between the first metallic electrode (2) and the doped chalcogenide layer (3), the intermediate layer (5) being a layer of a metallic element having the following properties a and b: a) a coefficient of thermal conductivity greater than or equal to 60 W/mK; and b) mechanical stress less than or equal to 1600 MPa.


Patent
Altis Semiconductor | Date: 2013-07-08

A microelectronic device with programmable memory is provided having at least: a first electrode (1) and a second electrode (9) having positioned between them a first layer of doped chalcogenide material (5) having an atomic concentration n1 of a doping metallic element d1. The device further has a second layer of doped chalcogenide material (8) positioned between the first electrode (1) and the second electrode (9), the second layer of doped chalcogenide material (8) having an atomic concentration n2 of a doping metallic element d2, the atomic concentration n2 being strictly less than the atomic concentration n1.


The present invention proposes a new structure for a hardware encryption apparatus (1) adapted to encrypt an original input signal into an encrypted output signal using a N round-based Advanced Encryption Standard, AES, algorithm, based on the use of a hardware iterative encryption pipelined 4-block structure comprising a first AddRoundKey module (11), a second SubBytes module (12), a third ShiftRows module (13) and a fourth MixColumns module (14). First to fourth hardware modules (11-14) are adapted to encrypt successively their respective input signals, during associated respective first to fourth encryption periods in four successive clock cycles and to deliver their respective encrypted output signal, the process being repeated N times. According to the invention, at least one of the first to fourth hardware modules in at least one round, is controlled during at least one clock cycle distinct from its associated respective first to fourth encryption period, either to generate a scrambling power in order to prevent a power analysis attack against said iterative encryption pipelined 4-block structure or to output a particular signal for use in detection of a fault attack against said iterative encryption pipelined 4-block structure. The invention also proposes a similar structure for a hardware decryption apparatus.


Patent
Altis Semiconductor and Qatar Foundation | Date: 2014-03-11

A tamper detection arrangement for use within an integrated circuit (1), the arrangement comprising: at least one input capacitor (4) having a first capacitance value; a feedback capacitor (5) having a second capacitance value; a sensing arrangement comprising an amplifier circuit having the at least one input capacitor as an input and the at least one feedback capacitor in a feedback loop across the amplifier operable to detect a change in the capacitance values between the at least one input capacitor and the feedback capacitor; and a protective shield to protect a sensitive area (2) of the integrated circuit from tampering, the shield being provided by the at least one input capacitor (4).


Patent
Altis Semiconductor and Adesto Technology Corporation | Date: 2012-01-10

According to one embodiment of the present invention, a solid state electrolyte memory cell includes a cathode, an anode and a solid state electrolyte. The anode includes an intercalating material and first metal species dispersed in the intercalating material.


Patent
French Atomic Energy Commission and Altis Semiconductor | Date: 2015-03-26

A resistive random access memory device includes a first electrode made of inert material; a second electrode made of soluble material, and a solid electrolyte, the first and second electrodes being respectively in contact with one of the faces of the electrolyte, the second electrode to supply mobile ions circulating in the solid electrolyte to the first electrode to form a conductive filament between the first and second electrodes when a voltage is applied between the first and second electrodes, the solid electrolyte including a region made of a first metal oxide that is doped by a second metal, distinct from the first metal and able to form a second metal oxide, the second metal selected such that the first metal oxide doped by the second metal has a band gap energy less than or equal to that of the first metal oxide not doped by the second metal.


Trademark
Altis Semiconductor | Date: 2015-09-24

Semiconductor processors; semiconductor processor chips; semiconductor memory devices; semi-conductor devices. Development and design of new technologies for others in the field of microchips; design of integrated circuits in the field of integrated semi-conductor components for the rapid development of new semiconductor products, integrated circuits as series components, system design services, services provided by technical consultants in the fields of central processing units and semi-conductors, namely, development, production, packaging, inspection of the compatibility of semiconductor products, namely, integrated circuits with specific application or standard products with specific application, namely, integrated circuits as series components connected to one another, development work as microprocessor design services; development work as semiconductor design services.


Trademark
Altis Semiconductor | Date: 2012-05-15

Central processing units with semiconductors; central processing unit chips with semiconductors; semiconductor memory devices; semiconductor devices. Scientific and technological services, namely, microelectronic technology development, namely, development and design of new technology for others in the field of microchips computer system configuration analyses; computer system design services; consulting in the field of computer system design; computer consulting; software consultancy; consulting in the field of the design and development of central processing units, consulting in the field of the design and development of semiconductors; quality control for others involving checking the compatibility of one software or hardware computer tool with another; data conversion of computer programs and data, not physical conversion; conversion of data or documents from physical to electronic media; duplication of computer programs; development and design of software; development and design of microprocessors; development and design of semiconductors; engineering services; computer programming; research and development of new computer products, namely, of computer hardware and software for third parties.

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