Time filter

Source Type


Gastaldo P.,Altatech
Solid State Technology | Year: 2010

Systematic inspection of the front-side, back-side and edge of substrates is becoming more critical - both to provide holistic, 360-degree wafer inspection as well as to increase the productivity and return on investment from today's multi-billion-dollar fabs. Holistic inspection needs will only increase as the industry continues to drive toward greater cost efficiencies by increasing substrate sizes beyond 300mm diameters to 450mm. This article describes holistic inspection methodology.

Vitiello J.,Altatech
Solid State Technology | Year: 2011

Phase-change memory (PCM) emerged as one of the potential candidates for next-generation nonvolatile memory applications. The technology was based on fast and reversible phase-change effects in chalcogenide materials, causing them to switch between crystalline and amorphous states. Equipment supplier, Altatech Semiconductor used its pulsed liquid-precursor, metalorganic CVD (MOCVD) technology to fill confined areas in PCM devices, working in a project jointly with STMicroelectronics, CEA-LETI, and the CNRS-LTM laboratory in Grenoble, France. The AltaCVD tool was used to create bilayer GeTe films by applying Ge and Te as liquid precursors under the project. Thin-film characterization was performed using x-ray photoelectron spectroscopy (XPS) measurements in 'quasi' in situ mode.

Kouassi S.,University of Tours | Gautier G.,University of Tours | Thery J.,CEA Grenoble | Desplobain S.,University of Tours | And 3 more authors.
Journal of Power Sources | Year: 2012

Since the 90's, porous silicon has been studied and implemented in many devices, especially in MEMS technology. In this article, we present a new approach to build miniaturized proton exchange membrane micro-fuel cells using porous silicon as a hydrogen diffusion layer. In particular, we propose an innovative process to build micro fuel cells from a "corrugated iron like" 3D structured porous silicon substrates. This structure is able to increase up to 40% the cell area keeping a constant footprint on the silicon wafer. We propose here a process route to perform electrochemically 3D porous gas diffusion layers and to deposit fuel cell active layers on such substrates. The prototype peak power performance was measured to be 90 mW cm -2 in a "breathing configuration" at room temperature. These performances are less than expected if we compare with a reference 2D micro fuel cell. Actually, the active layer deposition processes are not fully optimized but this prototype demonstrates the feasibility of these 3D devices. © 2012 Elsevier B.V.

Altatech | Date: 2012-10-09

The invention relates to a dark-field semi-conductor wafer inspection device including, in the following order, a light source for emitting an incident beam to a wafer along a first axis, a concentrator (

Altatech | Date: 2014-02-21

A reactor device for chemical vapor deposition comprises a reaction chamber having a purge gas inlet. A gas discharge channel is linked to said reaction chamber via a circumferential opening in the inner wall of said chamber. The reaction chamber is arranged such that a purge gas stream flows from the purge gas inlet to the discharge channel. Said inner wall of the reaction chamber comprises means for exchanging heat with the purge gas, for example fins.

Discover hidden collaborations