A.L.M.T. Corporation | Date: 2017-03-29
[Problem] To provide a heat spreader capable of removing heat from an element more efficiently and immediately than an existing one, and also capable of satisfactorily responding to further enhancement in performance and output of various apparatuses, and a method for efficiently manufacturing the same. [Solution] A heat spreader includes a Cu-Mo layer made of a Cu-Mo composite material and having an average thickness of less than or equal to 0.6 mm and a variation in thickness of less than or equal to 0.1 mm, and a Cu layer directly stacked on each of both surfaces thereof. A method for manufacturing the heat spreader includes planarizing a plate material of the Cu-Mo composite material constituting the Cu-Mo layer, and roll-bonding a Cu plate constituting the Cu layer to each of both surfaces thereof.
A.L.M.T. Corporation | Date: 2017-03-15
An issue to be addressed by the present invention lies in providing a heat-resistant tungsten alloy provided for a plastic working tool and satisfying both a physical property such as proof stress and hardness corresponding to a workpiece having a high melting point and practicability more than conventional. The present heat-resistant tungsten alloy has a first phase containing W as a major component, a second phase having a carbonitride of at least one element of Ti, Zr and Hf and containing the carbonitride as a major component when W is removed, and a third phase having a carbide of at least one element of group 5A elements in the periodic table and containing the carbide as a major component when W is removed, the heat-resistant tungsten alloy having a Vickers hardness of 550 Hv or more at a room temperature, a displacement of 1 mm or more when leading to fracture, as determined in a three point bending test at 1200C, and a 0.2% proof stress of 900 MPa or more, as determined in the three point bending test at 1200C.
Sumitomo Electric Industries and A.L.M.T. Corporation | Date: 2015-04-10
A composite member suitable for a heat radiation member of a semiconductor element and a method of manufacturing the same are provided. This composite member is a composite of magnesium or a magnesium alloy and SiC, and it has porosity lower than 3%. This composite member can be manufactured by forming an oxide film on a surface of raw material SiC, arranging coated SiC having the oxide film formed in a cast, and infiltrating this coated SiC aggregate with a molten metal (magnesium or the magnesium alloy). The porosity of the composite member can be lowered by improving wettability between SiC and the molten metal by forming the oxide film. According to this manufacturing method, a composite member having excellent thermal characteristics such as a coefficient of thermal expansion not lower than 4 ppm/K and not higher than 10 ppm/K and thermal conductivity not lower than 180 W/mK can be manufactured.
A.L.M.T. Corporation | Date: 2015-04-15
Provided is a heat-resistant molybdenum alloy having a strength equal to or greater than conventional and yet having ductility over a wide temperature range. A heat-resistant molybdenum alloy of this invention comprises a first phase containing Mo as a main component and a second phase comprising a Mo-Si-B-based intermetallic compound particle phase, wherein the balance is an inevitable impurity and wherein the Si content is 0.05mass% or more and 0.80mass% or less and the B content is 0.04mass% or more and 0.60mass% or less.
A.L.M.T. Corporation | Date: 2014-05-21
The invention provides an AlN substrate that has excellent heat transfer efficiency between the AlN substrate and another member, such as a semiconductor substrate, to be bonded to a bonding surface of the AlN substrate, and provides a method for producing the AlN substrate. The AlN substrate is composed of an AlN sintered body containing a group 2A element and a group 3A element, and the surface roughness Ra of the bonding surface is 3 nm or less, and, in voids having long diameters of 0.25 m or more that are exposed on the bonding surface, the mean value of the long diameters is 1.5 m or less, and the maximum value thereof is 1.8 m or less. The method for producing the AlN substrate includes sintering, at a temperature of 1,500 to 1, 900C, a precursor formed of a sintering material that contains 88.7 to 98.5 mass% with respect to AlN, 0.01 to 0.3 mass% with respect to a group 2A element in oxide equivalent, and 0.05 to 5 mass% with respect to a group 3A element in oxide equivalent so as to form a sintered body and applying HIP treatment onto the sintered body at a temperature of 1,450 to 2,000C and at a pressure of 9.8 MPa or more.
A.L.M.T. Corporation | Date: 2014-10-15
There is provided a flat plate-like sintered tungsten alloy that can be molded into a complex shape by press working or forge processing. The flat plate-like sintered tungsten alloy contains 85% by mass or more and 98% by mass or less of W, 1.4% by mass or more and 11% by mass or less of Ni, and 0.6% by mass or more and 6% by mass or less of at least one substance selected from the group consisting of Fe, Cu and Co, wherein an elongation percentage of the flat plate-like sintered tungsten alloy in a planar direction is 20% or more.
A.L.M.T. Corporation | Date: 2014-10-22
Provided is a heat-resistant alloy that satisfies physical properties such as proof stress and hardness adapted to an increase in the melting point of a welding object compared to conventional alloys. A heat-resistant alloy of this invention includes a first phase, as a main component, containing a Mo or W metal phase, a second phase containing a Mo-Si-B-based alloy, and a third phase containing titanium carbonitride, wherein the balance is inevitable compounds and inevitable impurities.
A.L.M.T. Corporation | Date: 2015-11-11
There is provided a ceramic wiring substrate and a method for manufacturing the same, the ceramic wiring substrate having an up-and-down conduction body which is made by forming a porous structure body made of a high melting point metal and then infiltrating a low-resistance metal in an up-and-down conduction hole subsequently formed in a substrate made in a plate shape through sintering a ceramic precursor, the up-and-down conduction body further having a normal composite structure without an abnormally grown particle, a void, a crack and the like and not having a problem of falling off from the substrate, as well as provided a semiconductor device configured by using this ceramic wiring substrate. An intermediate layer 5 formed of at least one selected from a group consisting of Mo, W, Co, Fe, Zr, Re, Os, Ta, Nb, Ir, Ru and Hf is formed on an inner surface of the up-and-down conduction hole 2 of the substrate 3 before being provided with the up-and-down conduction body 4 having the composite structure.
A.L.M.T. Corporation | Date: 2014-11-05
Provided is a Mo-Si-B-based alloy for a heat-resistant alloy that satisfies, more than conventional, physical properties such as proof stress and hardness adapted to an increase in the melting point of a welding object. A Mo-Si-B-based alloy powder of this invention is such that the full width at half maximum of (600) of Mo_(5)SiB_(2) in X-ray diffraction peak data is 0.08 degrees or more and 0.7 degrees or less.
A.L.M.T. Corporation | Date: 2016-11-16
Provided is a heat-resistant alloy that satisfies physical properties such as proof stress and hardness adapted to an increase in the melting point of a welding object compared to conventional alloys. A heat-resistant alloy of this invention includes a first phase, as a main component, containing a W metal phase, a second phase containing a Mo-Si-B-based alloy, and a third phase containing titanium carbonitride, wherein the balance is inevitable compounds and inevitable impurities.