Alchimer SA

Massy, France

Alchimer SA

Massy, France
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Gaillard F.,CEA Grenoble | Religieux L.,Alchimer SA | Mourier T.,CEA Grenoble | Ribiere C.,CEA Grenoble | And 4 more authors.
ECS Transactions | Year: 2015

Nowadays, Through Silicon Vias (TSV) with High Aspect Ratio (HAR > 8:1) are seriously mandatory in the 3D Integrated Circuits in order to maintain semiconductor performance trends into new technological advances. Consequently, successful integration of HAR TSVs requires solving key challenges in terms of technical (layer continuity, step coverage, adhesion) and industrial (scale-up to 300mm diameter wafer) developments. In this paper, one proposes to discuss those questions by means of the integration of an electrografting (eG) seed layer on a high conformal, but low conductive MOCVD TiN copper diffusion barrier. On the one hand, one studies the impact of different electrochemical parameters on eG Seed layer properties. On the other one, the encountered difficulties are presented and solutions are proposed to integrate eG Seed layer at a large scale i.e. on a specific industrial 300mm diameter wafer plating chamber. © The Electrochemical Society.

Mesnage A.,CEA Saclay Nuclear Research Center | Deniau G.,CEA Saclay Nuclear Research Center | Tessier L.,Pegastech | Mevellec V.,Alchimer S.A. | Palacin S.,CEA Saclay Nuclear Research Center
Applied Surface Science | Year: 2011

In this work we present two techniques that provide localized functionalization of the surface of materials. Both lead to localized grafted thin organic films (10-200 nm). The localization is brought by a chemical lift-off process, which relies on patterned weakly bonded films as sacrificial layers, combined with electrochemical (SEEP) or chemical (GraftFast©) processes which provides the final robust pattern on the surface. Both grafting processes, which were recently described, take advantage of the redox activation of diazonium salts associated with vinylic monomers in aqueous solution, and lead to similar grafted polymer films. Thanks to the high difference in adhesion between the grafted polymer and the patterned sacrificial layer (either an ink or weakly bound self-assembled monolayers), the latter may be easily removed, which unveils uncovered areas of the substrate. © 2011 Elsevier B.V. All rights reserved.

Truzzi C.,Alchimer SA
Solid State Technology | Year: 2012

The article explores the pros and cons of several possible approaches, proposing a process flow that offers cost and performance capabilities that can help realize the outstanding potential of wide IO in the most effective way. TSVs are manufactured in wafer fabs after the front end of line (FEOL) and before the back end of line (BEOL). TSVs are fabricated by drilling holes in the wafer, typically using a specific Si-etch solution called Bosch process, followed by the deposition of an electrically insulating liner, a copper diffusion barrier layer and a copper seed film. An additional restriction is imposed on the upstream Bosch etch process: because these dry-process methods require very smooth TSV sidewalls, the Si etch process has to run very slowly in order not to create scallops. A typical example is the deposition of the isolation layer after the via-last process.

Raynal F.,Alchimer SA | Mevellec V.,Alchimer SA | Frederich N.,Alchimer SA | Suhr D.,Alchimer SA | And 3 more authors.
Journal of Microelectronics and Electronic Packaging | Year: 2010

This paper describes production-readiness level of electrografted (eG) and chemical grafted (cG) layers deposited on a wide range of through silicon via (TSV) dimensions. Three layers are required to achieve via metallization: eG insulator, cG barrier, and eG copper seed.Complete characterization of each layer of the stack has been achieved, including electrical and mechanical properties. Impact on the 3D-IC design space of the electrografting nanotechnology optimized for highly conformal growth of TSV films is discussed. Four chemical baths are required to achieve the deposition of the three layers, shelf life, and bath monitoring strategy of each chemistry being presented in the last part of the paper. Some preliminary results of copper plating directly on top of the cG barrier are also reported. Copyright © 2010 International Microelectronics and Packaging Society.

Mevellec V.,Alchimer SA | Raynal F.,Alchimer SA | Suhr D.,Alchimer SA | Dequivre T.,Alchimer SA | Religieux L.,Alchimer SA
46th International Symposium on Microelectronics, IMAPS 2013 | Year: 2013

Alchimer develops alternative wet solutions based on electrografting (eG™) and chemical grafting (cG™) proprietary technologies. eG is based on surface chemistry formulations and processes. It is applied to conductive and semiconductive surfaces, and enables self-oriented growth of thin coatings of various materials, especially polymer and metals, initiated by in-situ chemical reactions between specific precursor molecules and the surface. Due to outstanding thermal, mechanical and electrical properties, electrografted polymer layers are an efficient insulation layer for TSV applications. In this paper, we fill focus on the copper diffusion barrier properties of this eG polymer layer and the associated Cost of Ownership (CoO) reduction for TSV metallization.

Truzzi C.,Alchimer S.A. | Lerner S.,Alchimer S.A.
Advanced Metallization Conference (AMC) | Year: 2010

This paper introduces a cost-effective seedless isolation/barrier/fill solution for Through Silicon Vias (TSVs) based on wet-process technologies. A specific nanotechnology approach is applied using standard plating equipment to conformally grow the isolation and barrier layers. An advanced, high-purity Cu-fill chemistry is applied directly onto the barrier to fill the vias. A single integrated wet-process tool can be used for the entire sequence. This solution significantly cuts TSV metallization costs with respect to traditional dry process/ECD techniques.

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