Alchimer

Massy, France
Massy, France

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The invention relates to a method for grafting an organic film onto an electically conductive or semiconductive surface by electro-reduction of a solution, wherein the solution comprises one diazonium salt and one monomer bearing at least one chain polymerizable functional group. During the electrolyzing process, at least one protocole consisting of an electrical polarization of the surface by applying a variable potential over at least a range of values which are more cathodic that the reduction or peak potential of all diazonium salts in said solution is applied. The invention also relates to an electrically conducting or semiconducting surface obtained by implementing this method. The invention further relates to electrolytic compositions.


The invention relates to a method for grafting an organic film onto an electrically conductive or semiconductive surface by electro-reduction of a solution, wherein the solution comprises one diazonium salt and one monomer bearing at least one chain polymerizable functional group. During the electrolyzing process, at least one protocols consisting of an electrical polarization of the surface by applying a variable potential over at least a range of values which are more cathodic that the reduction or peak potential of all diazonium salts in said solution is applied. The invention also relates to an electrically conducting or semiconducting surface obtained by implementing this method. The invention further relates to electrolytic compositions.


The invention concerns a device to conduct an electrochemical reaction on the surface of a semiconductor substrate (S), characterized in that the device comprises: a container (10) intended to contain an electrolyte (E), a support (20) arranged in the container, said support being adapted for attachment of the semiconductor substrate (S) on said support (20), a counter-electrode (30) arranged in the container (10), illumination means (50) comprising a source (51) emitting light rays and means (52) to homogenize the light rays on all of said surface of the semiconductor substrate (S), so as to activate the surface of the semiconductor substrate (S), and an electric supply (40) comprising connection means for connection to the semiconductor substrate and to the counter-electrode in order to polarize said surface of said semiconductor substrate (S) at an electric potential permitting the electrochemical reaction. The invention also concerns the method to conduct an electrochemical reaction on a surface of a corresponding semiconductor substrate.


The invention relates to a machine (1) adapted to metallise a cavity of a semi-conductive or conductive substrate such as a structure of the through silicon via type, according to a metallisation process comprising the steps consisting of: a) depositing an insulating dielectric layer in the cavity, b) depositing a barrier layer to diffusion of the filling metal,c) filling the cavity by electrodeposition of metal, preferably copper, andd) carrying out annealing of the substrate,characterised in that it comprises a series of wet-processing modules (10-60) configured to conduct steps a), b) and c) by wet-processing in a chemical bath (B) and at least one additional module (70) adapted to conduct annealing step d) of the substrate (S) such that the machine (1) is capable of executing the entire metallisation process of the cavity.


The subject of the present invention is an electrolyte composition for depositing copper on semiconductor substrates covered with a barrier layer. This electrolyte contains the combination of imidazole and 2,2-bipyridine, used as suppressor, and of thiodiglycolic acid, used as accelerator. The combination of these additives makes it possible to obtain a bottom-up filling on trenches of very small width, typically of less than 100 nm.


The present invention relates to a kit intended for the deposition of nickel or cobalt in the cavities of a semiconductor substrate intended to form through-silicon vias (TSV) for making interconnections in integrated circuits in three dimensions. The invention also relates to a method of metallization of the insulating surface of such a substrate which comprises contacting the surface with a liquid aqueous solution containing: The step coverage of the layer of nickel or cobalt obtained can be greater than 80%, which facilitates subsequent filling of the vias with copper by electrodeposition.


The subject-matter of the present invention is a composition especially intended for filling, by the electroplating of copper, a cavity in a semiconductor substrate such as a through-via structure for the production of interconnects in three-dimensional integrated circuits. According to the invention, this composition comprises in solution in a solvent:


The present invention relates to an electrolyte composition for depositing copper on metal substrates. The composition contains a combination of two aromatic amines and an electrochemically inert cation. This electrolyte makes it possible to increase the copper nucleation density. It also allows bottom-up filling in trenches that have a very small opening dimension, typically lower than 40 nm.


The invention proposes a method for forming a vertical electrical connection (50) in a layered semiconductor structure (1), comprising the following steps:- providing (100) a layered semiconductor structure (1), said layered semiconductor structure (1) comprising:- a support substrate (20) including an first surface (22) and a second surface (24),- an insulating layer (30) overlying the first surface (22) of the support substrate (20), and- at least one device structure (40) formed in the insulating layer (30); and- drilling (300) a via (50) from the second surface of the support substrate (20) up to the device structure (40), in order to expose the device structure (40);characterized in that drilling (300) of the insulating layer is at least performed by wet etching (320).


A subject matter of the invention is a process for the formation of nickel silicide or of cobalt silicide, comprising the stages consisting in: The aqueous solution comprises a surface-active agent chosen from the compounds comprising at least one anionic or nonionic polar group and an alkyl chain comprising from 10 to 16 carbon atoms. This process essentially has applications in the manufacture of NAND memories and photovoltaic cells.

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