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Massy, France

The invention relates to a method for grafting an organic film onto an electrically conductive or semiconductive surface by electro-reduction of a solution, wherein the solution comprises one diazonium salt and one monomer bearing at least one chain polymerizable functional group. During the electrolyzing process, at least one protocols consisting of an electrical polarization of the surface by applying a variable potential over at least a range of values which are more cathodic that the reduction or peak potential of all diazonium salts in said solution is applied. The invention also relates to an electrically conducting or semiconducting surface obtained by implementing this method. The invention further relates to electrolytic compositions.

A subject matter of the invention is a process for the formation of nickel silicide or of cobalt silicide, comprising the stages consisting in: The aqueous solution comprises a surface-active agent chosen from the compounds comprising at least one anionic or nonionic polar group and an alkyl chain comprising from 10 to 16 carbon atoms. This process essentially has applications in the manufacture of NAND memories and photovoltaic cells.

The subject of the present invention is an electrolyte composition for depositing copper on semiconductor substrates covered with a barrier layer. This electrolyte contains the combination of imidazole and 2,2-bipyridine, used as suppressor, and of thiodiglycolic acid, used as accelerator. The combination of these additives makes it possible to obtain a bottom-up filling on trenches of very small width, typically of less than 100 nm.

The present invention relates to an electrolyte composition for depositing copper on metal substrates. The composition contains a combination of two aromatic amines and an electrochemically inert cation. This electrolyte makes it possible to increase the copper nucleation density. It also allows bottom-up filling in trenches that have a very small opening dimension, typically lower than 40 nm.

The present invention relates to a kit intended for the deposition of nickel or cobalt in the cavities of a semiconductor substrate intended to form through-silicon vias (TSV) for making interconnections in integrated circuits in three dimensions. The invention also relates to a method of metallization of the insulating surface of such a substrate which comprises contacting the surface with a liquid aqueous solution containing: The step coverage of the layer of nickel or cobalt obtained can be greater than 80%, which facilitates subsequent filling of the vias with copper by electrodeposition.

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