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Prkhodko O.,al Farabi Kazak National University | Almasov N.,al Farabi Kazak National University | Dyussembayev S.,al Farabi Kazak National University | Maksimova S.,al Farabi Kazak National University | And 3 more authors.
Chalcogenide Letters | Year: 2013

Influence of Bi impurity on the structure and electrical, photoelectrical and optical properties of amorphous As40Se30S30films have been studied. Bismuth concentration in the films was changed up to 20 at.%. Amorphous As40Se30S30 films modified by Bi (a-As40Se30S30 films) were prepared by RF sputtering of combined target glassy As40Se30S30 and Bi. Electronic parameters of a-As40Se30S30 films show significant increase of the photoconductivity under illumination. The results are well explained by a microheterogenious doping model of ChGS. Source

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