Hasegawa T.,Akita University |
Tomioka T.,Akita University |
Kondo Y.,Akita Research Institute of Advanced Technology |
Yamane H.,Akita Research Institute of Advanced Technology |
Ishio S.,Akita University
Journal of Applied Physics | Year: 2011
A bit patterning process using the ferromagnetic (FM)-antiferromagnetic (AF) transition in 001-oriented L10 FePt1-xRhx films was investigated. First, the composition (x) dependence of magnetization (Ms) and magnetocrystalline anisotropy (Ku) of the films was studied. The films with 0 ≤ x ≤ 0.32 showed ferromagnetism (800 ≤ Ms ≤ 1100 emu/cm3) with a high magnetocrystalline anisotropy (1.7 × 107 ≤ Ku ≤ 7.0 × 107 erg/cm3), and the films with 0.34 x 0.40 showed antiferromagnetism. The composition of x = 0.34 was the threshold of the FM-AF transition. Next, the FM-AF transition was applied for bit patterning. Atomic diffusion was used for modifying the composition. Only the magnetic phase of the area whose composition crossed the threshold changed abruptly to the FM phase. FM dots with sizes (D) of 20 ≤ D ≤ 1000 nm were observed in the AF matrix by magnetic force microscopy. The dots with D 100 nm formed multidomain structures, and the dots with D ≤ 100 nm formed a single-domain structure. © 2011 American Institute of Physics.
Ye M.,Akita Research Institute of Advanced Technology |
Wang B.,Akita Research Institute of Advanced Technology |
Uchida M.,Akita Research Institute of Advanced Technology |
Yanase S.,Akita Research Institute of Advanced Technology |
And 3 more authors.
Japanese Journal of Applied Physics | Year: 2010
An approximately 1 μm-thick thin insulation film is introduced into a liquid crystal lens cell, replacing the substrate between the patterned electrode and the liquid crystal layer. The distance between the electrodes decreases markedly, and the driving voltages decreases from several tens of volts to only approximately 3V. © 2010 The Japan Society of Applied Physics.