AIXTRON SE is a German-based technology company, which specialises in manufacturing metalorganic chemical vapour deposition equipment, for clients in the semiconductor industry. The company's shares are listed on the Frankfurt Stock Exchange with ADRs on the NASDAQ, and it is a constituent of the TecDAX index. Wikipedia.
Aixtron Ag | Date: 2017-01-04
The invention relates to a device and to a method for determining the concentration of a vapor in a volume (2), in particular for determining or controlling the mass flow of the vapor being conveyed through the volume (2) by a carrier gas, wherein the volume (2) can be heated by means of a heating unit (8) to a temperature above the condensation temperature of the vapor, comprising a sensor (1), which supplies a sensor signal that is dependent on the concentration or partial pressure of the vapor. In order to provide a sensor for determining the vapor concentration using such a device or such a method, in particular a method for separating OLED layers, the sensor signal of which is not influenced, or at most slightly influenced, by the carrier gas, the sensor (1) according to the invention has an oscillatory body that can be brought to oscillation, the oscillation frequency of which is influenced by a mass accumulation formed on a surface of the oscillating body by the condensed vapor. The oscillating body has a temperature control unit, by means of which the oscillating body can be brought to a temperature below the condensation temperature of the vapor, wherein an evaluation unit determines the concentration or the partial pressure from the temporal change of the oscillator frequency.
Aixtron Ag | Date: 2017-05-10
The invention relates to a CVD reactor having a flat component (11, 12) and to the component (11, 12, 15, 17), said component having two broad sides (3, 3), which extend parallel to each other and are spaced apart from each other by a thickness (d), wherein an outer edge (5) of each broad side (3, 3) transitions without kinks into an edge of an outer peripheral side (4) in such a way that an edge rounding having an edge rounding radius (R) and having an edge rounding arc length () is formed, wherein the thickness (d) is substantially less than a circle diameter (D) that is surface-equivalent to the broad-side surface, wherein the component (11, 12, 15, 17) forms a core body (1) composed of graphite, the material of said core body having a greater coefficient of thermal expansion than the material of a coating (2) composed of SiC or TaC, with which coating the broad sides (3, 3) and the peripheral side (4) are coated at a coating temperature greater than the room temperature, the coating therefore having a compressive stress at room temperature. In order to reduce the stress between the coating (2) and the core body (1), according to the invention the edge rounding arc length () is greater than 90 and the edge rounding radius (R) is at most 1 mm and/or is greater than the thickness of the coating (2), wherein the peripheral side (4) has rounding segments, which transition into each other without kinks and which form at least one valley (6).
Aixtron Ag | Date: 2015-06-25
A CVD reactor includes a flat component with two broad sides extending parallel to each other and spaced apart from each other by a thickness. An outer edge of each broad side transitions without kinks into an edge of an outer peripheral side of the flat component. The thickness of the flat component is substantially less than a diameter of the flat component. The flat component includes a core body composed of graphite. The core body is coated with a SiC or TaC coating, which exhibits a compressive stress at room temperature. In order to reduce the stress between the coating and the core body, the rounding arc length of the outer edge is greater than 90 and the rounding radius of the outer edge is at most 1 mm and/or is greater than the coating thickness. Additionally, rounding segments of the peripheral side transition into each other without kinks.
Aixtron Ag | Date: 2017-02-15
The invention relates to a device for depositing carbonaceous structures, for example layers in the form of nanotubes or graphene on a substrate (6), which is supported by a substrate support (1) disposed in a process chamber housing (19), wherein a process gas can be fed in the direction onto the at least one substrate (6) through gas outlet openings (39) of a gas inlet element (24, 25) disposed in the process chamber housing (19). As a functionally advantageous modification, according to the invention, the process chamber housing (19) has two opposing walls (48, 48) which have holding recesses (34, 35, 36, 37, 38). At least one plate-shaped component (24, 25, 26, 30, 31) is disposed in the process chamber housing (19), which plate-shaped component has to two edge portions directed away from one another that each are inserted respectively in a holding recess (34 to 38) of one of the two walls (48, 48).
Aixtron Ag | Date: 2017-02-15
The invention relates to a substrate carrier and to a CVD reactor interacting with the substrate carrier, said substrate carrier being designed to be arranged in a CVD or PVD reactor (20), in particular for the deposition of carbon nanotubes or graphene, said substrate carrier having a first broad-side surface (2) for accommodating a substrate (6) to be coated and a second broad-side surface (3) facing away from the first broad-side surface (2). In order to improve a device or parts of a device for depositing carbon nanotubes, the first broad-side surface (2) and the second broad-side surface (3) according to the invention each have a substrate accommodation zone (4, 5), in which fastening elements (14, 14, 15) are provided, by means of which a substrate (6) or sections of a substrate (6) can be fastened to the broad-side surface (2, 3). The invention further relates to a CVD reactor having a substrate carrier (1).
Aixtron Ag | Date: 2015-03-19
A device is provided for depositing carbonaceous structures, for example layers in the form of nanotubes or graphene on a substrate, which is supported by a substrate support disposed in a process chamber housing. A process gas can be delivered onto the substrate through gas outlet openings of a gas inlet element disposed in the process chamber housing. The process chamber housing has two opposing walls which each have holding recesses. At least one plate-shaped component is disposed in the process chamber housing. The plate-shaped component has two edge portions directed away from one another that each are inserted respectively in the holding recess of one of the two opposing walls.
Aixtron Ag | Date: 2015-10-29
A transfer module for a multi-module apparatus may include a) a plurality of facets, wherein a facet of said plurality comprises a port configured to hold a module; and b) at least one robot arm configured to move an object to and from the module through said port via a combination of extension and rotational movements.
Aixtron Ag | Date: 2015-06-16
In a method and a device for generating vapor for a CVD or PVD device, liquid or solid particles of a first source material are fed into a first heat transfer body via a first feed line. The first heat transfer body vaporizes the particles into a first vapor, which is transported by a carrier gas from the first heat transfer body into a second heat transfer body arranged after the first heat transfer body. The first heat transfer body is heated to a first temperature, and the second heat transfer body is heated to a second temperature. Liquid or solid particles of a second source material are fed into a second heat transfer body via a second feed line. The second heat transfer body vaporizes the particles into a second vapor, which is transported along with the first vapor out of the second heat transfer body by the carrier gas.
Agency: European Commission | Branch: H2020 | Program: SGA-RIA | Phase: FETFLAGSHIP | Award Amount: 89.00M | Year: 2016
This project is the second in the series of EC-financed parts of the Graphene Flagship. The Graphene Flagship is a 10 year research and innovation endeavour with a total project cost of 1,000,000,000 euros, funded jointly by the European Commission and member states and associated countries. The first part of the Flagship was a 30-month Collaborative Project, Coordination and Support Action (CP-CSA) under the 7th framework program (2013-2016), while this and the following parts are implemented as Core Projects under the Horizon 2020 framework. The mission of the Graphene Flagship is to take graphene and related layered materials from a state of raw potential to a point where they can revolutionise multiple industries. This will bring a new dimension to future technology a faster, thinner, stronger, flexible, and broadband revolution. Our program will put Europe firmly at the heart of the process, with a manifold return on the EU investment, both in terms of technological innovation and economic growth. To realise this vision, we have brought together a larger European consortium with about 150 partners in 23 countries. The partners represent academia, research institutes and industries, which work closely together in 15 technical work packages and five supporting work packages covering the entire value chain from materials to components and systems. As time progresses, the centre of gravity of the Flagship moves towards applications, which is reflected in the increasing importance of the higher - system - levels of the value chain. In this first core project the main focus is on components and initial system level tasks. The first core project is divided into 4 divisions, which in turn comprise 3 to 5 work packages on related topics. A fifth, external division acts as a link to the parts of the Flagship that are funded by the member states and associated countries, or by other funding sources. This creates a collaborative framework for the entire Flagship.
Agency: European Commission | Branch: H2020 | Program: RIA | Phase: ICT-25-2015 | Award Amount: 4.00M | Year: 2016
Our modern society has gained enormously from novel miniaturized microelectronic products with enhanced functionality at ever decreasing cost. However, as size goes down, interconnects become major bottlenecks irrespective of the application domain. CONNECT proposes innovations in novel interconnect architectures to enable future CMOS scaling by integration of metal-doped or metal-filled Carbon Nanotube (CNT) composite. To achieve the above, CONNECT aspires to develop fabrication techniques and processes to sustain reliable CNTs for on-chip interconnects. Also challenges of transferring the process into the semiconductor industry and CMOS compatibility will be addressed. CONNECT will investigate ultra-fine CNT lines and metal-CNT composite material for addressing the most imminent high power consumption and electromigration issues of current state-of-the-art copper interconnects. Demonstrators will be developed to show significantly improved electrical resistivity (up to 10Ohmcm for individual doped CNT lines), ampacity (up to 108A/cm2 for CNT bundles), thermal and electromigration properties compared to state-of-the-art approaches with conventional copper interconnects. Additionally, CONNECT will develop novel CNT interconnect architectures to explore circuit- and architecture-level performance and energy efficiency. The technologies developed in this project are key for both performance and manufacturability of scaled microelectronics. It will allow increased power density and scaling density of CMOS or CMOS extension and will also be applicable to alternative computing schemes such as neuromorphic computing. The CONNECT consortium has strong links along the value chain from fundamental research to endusers and brings together some of the best research groups in that field in Europe. The realisation of CONNECT will foster the recovery of market shares of the European electronic sector and prepare the industry for future developments of the electronic landscape