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"ATDC" redirects here. For the Michigan Tech building, see Advanced Technology Development Complex.The Advanced Technology Development Center is a science and business incubator in Georgia. It is part of the Enterprise Innovation Institute at the Georgia Institute of Technology, and is headquartered in Technology Square. ATDC was formed in 1980 to stimulate growth in Georgia's technology business base, and admitted its first member company in 1981. It now has locations in Atlanta and Savannah. In 2011, ATDC expanded its mission by merging with Georgia Tech’s VentureLab and with the Georgia SBIR Assistance Program. ATDC has opened its membership to all technology entrepreneurs in Georgia, from those at the earliest conception stage to the well-established, venture-fundable companies.More than 120 companies started there, including firms such as MindSpring and TransNexus. Sponsored companies have created almost 51,000 man-years of employment, generated over $12.7 billion revenue, generated over $100 million in profit to Georgia, and raised over $1 billion in venture capital since 1999. ATDC has been recognized by Inc. Magazine and Business Week as one of the nation's top incubators, and won several other awards. Wikipedia.

The magneto-optical properties of stacked-layer structures consisting of hcp-Co80Pt20 thin films and noble metal underlayers were investigated under polar Kerr measurement conditions. For CoPt/Ag stacked films, insertion of a 2-nm-thick ZnO layer into the interface resulted in the concurrent improvement of the magneto-optical enhancement at the plasma edge of Ag and perpendicular magnetic anisotropy. An ideal square out-of-plane hysteresis loop with a large Kerr rotation of approximately 1.25° was obtained in the CoPt/ZnO/Ag stacked structure. Moreover, heat treatment in a vacuum resulted in further improvement of the perpendicular magneto-optical properties in the stacked structures with thin CoPt layers. © 2013 American Institute of Physics.

Ganguly P.,Advanced Technology Development Center
Optics Communications | Year: 2012

Lithium niobate (LiNbO 3) photonic wires are of growing interest in the field of nonlinear optics and to fabricate micro-ring resonators. In this paper the design and analysis of LiNbO 3 photonic wires by a semi-analytical technique is presented. The two-dimensional refractive index profile of the waveguide is transformed into lateral one-dimensional equivalent-index profile by the effective-index method. A transfer matrix method is then applied to this lateral equivalent-index profile of the waveguide to determine the propagation constants and electric-field distributions of the guided modes. Single mode photonic wires at 1.31 μm transmitting wavelength are designed for both TE and TM polarizations and finally, the matrix method is employed along with the conformal mapping technique to determine the bending loss of the curved photonic wires for different radii of curvature. The process needs less computation power, both in terms of elapsed time and memory, and can also be applicable to other photonic materials. © 2012 Elsevier B.V. All rights reserved.

Yamane H.,Advanced Technology Development Center
Japanese Journal of Applied Physics | Year: 2012

Magneto-optical properties of a stacked-layer structure with perpendicular antiferromagnetically coupled CoPt layers have been investigated under the polar Kerr measurement condition. The stacked layer included an optical cavity that was basically composed of a [CoPt/ZnO/CoPt] trilayer inside the film. It also acted as a magneto-optical cavity under the residual magnetization condition. The enhancement of the residual Kerr rotation was observed by the antiparallel magnetization alignment of the CoPt layers. The enhanced residual rotation angle in the AF sample was greater than the saturation angle of a 5-nm-thick CoPt single film. Moreover, by the finite-difference time-domain simulation, in this system, we demonstrated that a large enhancement of the magneto-optical effect can be anticipated by adopting a two-dimensional photonic crystal structure. © 2012 The Japan Society of Applied Physics.

Ghosh Ray S.,Advanced Technology Development Center | Ghangrekar M.M.,Indian Institute of Technology Kharagpur
Bioresource Technology | Year: 2015

For enhancing organic matter removal from cereal-based distillery stillage two-stage treatment consisting of fermentation by Aspergillus awamori followed by microbial fuel cell (MFC) is proposed. Considerable reduction in total and soluble chemical oxygen demand (COD) up to 70% and 40%, respectively, along with 98% reduction of suspended solids (SS) has been achieved during fungal pretreatment. The process generated chitosan, a useful fermentation byproduct from fungal mycelia, as 0.6-0.7g/l of settled sludge with mycelium (3.8% solids). Prior treatment of wastewater with fungal strain enhanced the power generation in MFC by 2.9 times at an organic loading rate of 1.5kgCOD/m3day, demonstrating soluble COD reduction of 92% in MFC. While treating distillery wastewater, this two-stage integrated biological process demonstrated overall 99% COD removal and almost complete removal of SS, delivering ample scope for scale-up and industrial application to offer effective solution for distillery wastewater treatment. © 2014 Elsevier Ltd.

Kato K.,Advanced Technology Development Center
Physical Review B - Condensed Matter and Materials Physics | Year: 2012

We studied H-atom migration in SiO 2/Si systems triggering O vacancy generation based on first-principles calculations. The migrating H atoms in SiO 2 have been found to be mostly negatively charged irrespective of the charge-state polarity in the systems because strong charge transfer from the Si to the O atoms substantially increases the O 2p energy levels. Although the SiO 2 systems with no defect are not degraded by the migrating H atoms, 2Si=O-H complex formation in the SiO 2/Si systems has been found to generate an O vacancy via H 2O molecule desorption after alternate electron transfer between the 2Si=O-H complex and the Si substrate, leading to the final electrical breakdown of SiO 2 films. The migration of negatively charged H atoms and their degradation agree well with the recently observed gate bias polarity dependent SiO 2 film degradation. © 2012 American Physical Society.

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