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Kang I.-S.,Seoul National University | Kang I.-S.,Advanced Technology Center for Information Electronic Materials and Components | Park C.-H.,Seoul National University | Park C.-H.,Samsung | And 9 more authors.
IEEE Transactions on Electron Devices | Year: 2011

The influences of metal-induced laterally crystallized silicon channel corners on the performance and reliability of thin-film transistors (TFTs) were investigated. It was found that the TFT with the channel width, mostly applied to active matrix organic light-emitting diodes, had weak immunity to electrical stresses because of the heaviest weight of silicide-rich channel corner on the channel width by the geometric effect. The proposed TFT fabrication, which is composed of two consecutive adjacent step switches, makes TFTs practically channel-corner-free, resulting in high reliability. Moreover, it enables TFTs to have more current flow paths that maintain a high performance. © 2010 IEEE.

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