Pearl Kogyo Co. and Advanced Micro-Fabrication Equipment | Date: 2015-06-19
A high frequency power supply device and power supplying method are disclosed, which can rapidly and accurately control power used for generation of plasmas. The device includes a first high frequency power supply, providing power at frequency f1, and a second high frequency power supply providing power at frequency f2 (f1>f2). The first power supply includes: a first high frequency oscillator, which excites the high frequency power at the first frequency and has a variable frequency; a first power amplification block, which amplifies the power of the high frequency oscillator; a heterodyne detection block, which performs heterodyne detection of a reflected wave; and a first control block, which receives a signal after detection of the heterodyne detection block and a traveling wave signal, and controls an oscillating frequency of the first high frequency oscillating block and an output of the first power amplification block.
Advanced Micro-Fabrication Equipment | Date: 2015-11-19
The present invention relates to a device of changing the gas flow pattern in the process chamber and a wafer processing method and system; a gas introduced from the gas inlet to the process chamber will process the wafer in the process chamber; a gas center ring is set in the process chamber to adjust the gas flow pattern, which includes a fixed component under the gas inlet and above the wafer, and a movable ring could locate in the first position or the second position respectively; when the movable ring is in the first position, the gas is delivered downwards to the wafer via the first opening set on the fixed component; when the movable ring is in the second position, the gas is delivered downwards to the wafer via the second opening set on the movable ring. The present invention constitutes the gas center ring by different combinations of fixed component and movable component, to change the gas flow pattern in the process chamber, achieving effective control on the wafer processing effects and to dispense with opening the process chamber during the adjustment process of gas center ring.
Advanced Micro-Fabrication Equipment | Date: 2013-09-19
The present invention provides a method for in situ cleaning of an MOCVD reaction chamber. The method includes: introducing a first cleaning gas into the reaction chamber, and converting the first cleaning gas into a first plasma inside the reaction chamber, and maintaining the pressure inside the reaction chamber in a first predetermined pressure range for a first time period, to remove a carbonaceous organic substance inside the reaction chamber; introducing a second cleaning gas into the reaction chamber, and converting the second cleaning gas into second plasma inside the reaction chamber, and maintaining the pressure inside the reaction chamber in a second predetermined pressure range for a second time period, to remove metal and its compound inside the reaction chamber.
Advanced Micro-Fabrication Equipment | Date: 2015-11-25
A system for processing substrates having an atmospheric front end and a vacuum main frame, primary processing chambers attached to the main frame, a loadlock positioned between the front end and the main frame, and at least one secondary processing chamber attached to the loadlock.
Advanced Micro-Fabrication Equipment | Date: 2015-06-17
A gas shower device, a device and a method for chemical vapor deposition. A gas shower device has a showerhead. The showerhead includes a center region and a periphery region surrounding the center region; the center region and periphery region of the showerhead have a plurality of second gas-outlets which are arranged in parallel; the second gas-outlets are used to output the second gas; a first gas-outlet arranged between two adjacent second gas-outlets, includes the first sub-gas-outlet located in the center region and the second sub-gas-outlet located in the periphery region; the first sub-gas-outlet and the second sub-gas-outlet are mutually isolated, the first sub-gas-outlet is used to output the first gas and the second sub-gas-outlet is used to output the second gas; a first gas channel is connected to the first sub-gas-outlet; a second gas channel is connected to the second gas-outlet and the second sub-gas-outlet. The film formation quality is improved by using the chemical vapor deposition device with the gas shower device.
Advanced Micro-Fabrication Equipment | Date: 2016-07-11
An ICP A plasma reactor having an enclosure wherein at least part of the ceiling forms a dielectric window. A substrate support is positioned within the enclosure below the dielectric window. An RF power applicator is positioned above the dielectric window to radiate RF power through the dielectric window and into the enclosure. A plurality of gas injectors are distributed uniformly above the substrate support to supply processing gas into the enclosure. A circular baffle is situated inside the enclosure and positioned above the substrate support but below the plurality of gas injectors so as to redirect the flow of the processing gas.
Advanced Micro-Fabrication Equipment | Date: 2016-04-26
A chemical vapor deposition apparatus includes: a reaction chamber, a reaction area in the upper portion of the reaction chamber, an exhaust area in the bottom portion of the reaction chamber and a pumping apparatus connected to the outside of the reaction chamber. The exhaust area includes an isolating device dividing the exhaust area into an exhaust chamber and a storage chamber. The isolating device has a sidewall with gas openings connecting the exhaust chamber and the storage chamber. The exhaust area further includes a scraping component that can move up and down between the upper end and the lower end of the gas openings.
Advanced Micro-Fabrication Equipment | Date: 2014-01-29
A method for cleaning a gas conveying device in a film growth reaction chamber is provided. The gas conveying device comprises a gas conveying surface for releasing reaction gas to the film growth reaction chamber. The film growth reaction chamber comprises a support device. The method comprises that a) a cleaning device is provided and separably installed on the support device, said cleaning device comprising a surface which is facing to the gas conveying surface and on which multiple scraping structures are distributed; b) a rotation drive device is provided, which is connected to the support device and can selectively drive the support device to rotate; c) the position of the cleaning device is adjusted so that the scraping structures contact with, at least in part, the gas conveying surface of the gas conveying device; and d) the rotation drive device is rotated to drive the cleaning device to rotate, and the scraping structures contact the gas conveying surface and remove attachments from the gas conveying surface.
Advanced Micro-Fabrication Equipment | Date: 2014-07-16
A method for measuring a temperature of a film in a reaction chamber is provided. The method includes: obtaining reflectivity sampling data R of a sampling point set in a detection area of the film for light with a wavelength , and thermal radiation value sampling data E of the sampling point set; obtaining a first correction factor and a second correction factor according to values of at least two sampling data groups, wherein 0<1, 01; obtaining a blackbody radiation value L_(b )of the detection area of the film for the light with the wavelength according to the first correction factor , the second correction factor and the values of the at least two sampling data groups; obtaining a temperature T of the detection area by looking up a table according to the blackbody radiation value L_(b )and the wavelength .
Advanced Micro-Fabrication Equipment | Date: 2016-02-12
The invention is related to a process component and the method to improve the MOCVD reaction. The principle of the improvement is to cover a compact protection film on the stainless steel body in the MOCVD reaction chamber. Said film is composed of the elements of the gas required during the MOCVD deposition process, or the elements that will not react with the reaction gases of MOCVD. Said film is a compound composed of at least one of the Al, Ga and Mg and at least one of the oxygen or nitrogen, or the other materials with stable chemical characteristics that will not react with the gases in the MOCVD process. Said film will not react with the gases in the MOCVD process or add contaminants to the MOCVD reaction chamber. Therefore, it could reduce the initialization time of the MOCVD process, and improve the efficiency of the MOCVD equipment. The protection film has the compact organization with the porosity less than 1%, and the thickness of the protection film is 1 nm to 0.5 mm.