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Patent
Pearl Kogyo Co. and Advanced Micro-Fabrication Equipment | Date: 2015-06-19

A high frequency power supply device and power supplying method are disclosed, which can rapidly and accurately control power used for generation of plasmas. The device includes a first high frequency power supply, providing power at frequency f


Patent
Advanced Micro-Fabrication Equipment | Date: 2013-12-16

A plasma confinement apparatus, and method for confining a plasma are described and which includes, in one form of the invention, a plurality of electrically insulated components which are disposed in predetermined spaced relation, one relative to the others, and surrounding a processing region of a plasma processing apparatus, and wherein a plurality of passageways are defined between the respective insulated components; and at least one electrically conductive and grounded component forms an electrical field shielding for the processing region.


Patent
Advanced Micro-Fabrication Equipment | Date: 2013-09-19

The present invention provides a method for in situ cleaning of an MOCVD reaction chamber. The method includes: introducing a first cleaning gas into the reaction chamber, and converting the first cleaning gas into a first plasma inside the reaction chamber, and maintaining the pressure inside the reaction chamber in a first predetermined pressure range for a first time period, to remove a carbonaceous organic substance inside the reaction chamber; introducing a second cleaning gas into the reaction chamber, and converting the second cleaning gas into second plasma inside the reaction chamber, and maintaining the pressure inside the reaction chamber in a second predetermined pressure range for a second time period, to remove metal and its compound inside the reaction chamber.


Patent
Advanced Micro-Fabrication Equipment | Date: 2013-09-19

The present invention provides a method for in situ cleaning of an MOCVD reaction chamber. The method includes: maintaining the internal pressure of the MOCVD reaction chamber in a predetermined pressure range, and keeping a plasma inside the MOCVD reaction chamber for a predetermined time period to completely remove deposits inside the MOCVD reaction chamber. The method for in situ cleaning of an MOCVD reaction chamber according to the embodiments of the present invention may remove relatively stable organic ligands or related polymers, resulting in a good cleaning effect for the removal of the deposits on the surfaces with a relatively low temperature inside the MOCVD reaction chamber.


Patent
Advanced Micro-Fabrication Equipment | Date: 2014-07-16

A method for measuring a temperature of a film in a reaction chamber is provided. The method includes: obtaining reflectivity sampling data R of a sampling point set in a detection area of the film for light with a wavelength , and thermal radiation value sampling data E of the sampling point set; obtaining a first correction factor and a second correction factor according to values of at least two sampling data groups, wherein 0<1, 01; obtaining a blackbody radiation value L

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