Advanced Micro-Fabrication Equipment | Date: 2016-11-28
The invention relates to a substrate processing method and relevant apparatus. The method includes: placing the substrate into a reactor consist by several walls; delivering etching gas to the reactor to etch the substrate; receiving optical signal from the reactor with the inspection window arranged on at least one of said walls to determine the endpoint of etching; generating protective gas flow in the inspection window during etching process, to prevent or reduce the etching gas or etching by-product flow toward the inspection window. This invention could improve the accuracy and stability of etching endpoint detection.
Advanced Micro-Fabrication Equipment | Date: 2016-12-15
The present invention discloses a multi-zone active-matrix temperature control system, the control system having a temperature control matrix and a gate driver; the temperature control matrix comprising: N*M temperature control modules forming a N-row M-column matrix, a power supply line, and a power return line; each temperature control module comprising: a temperature control unit adapts to be heated up by electrical power for temperature controlling; a semiconductor switch provided with a gate electrode connected with the gate driver, two ends of the gate, which turn on or off, being connected with the power supply line, and with the power return line through the temperature control unit, respectively. In the temperature control matrix, one ends, which are connected with a power return line, of the temperature control units of temperature control modules in a same row or same column are serially connected, and connected with the power supply line; one ends, which are connected with the power supply line, of the semiconductor switches of the temperature control modules at a same row or a same column are serially connected, and connected with the power supply line. The present invention may precisely perform temperature control to each zone of the electrostatic chuck and significantly reduces the number of electrostatic chuck lead-out lines.
Advanced Micro-Fabrication Equipment | Date: 2016-12-21
The invention relates to an electrode structure for ICP etcher, including: inductive coils, inductive coil connectors, connect rods and sleeve; in which, inductive coils are set on insulation window and insulation window is set on chamber lid; two ends of the connect rods respectively connect inductive coils and inductive coil connectors; the sleeve is made of conductive material and grounded; first end of the sleeve is covered by a cap while the second is opening; the cap has holes, and the connect rods are set pass through the holes and isolated from the cap; the opening of sleeve is set toward inductive coils, and the inductive coils are shielded inside the sleeve. This invention shields electromagnetic field generated by inductive coil connectors outside the sleeve to avoid influence of even electromagnetic field generated to inductive coils, and guarantee even etching.
Advanced Micro-Fabrication Equipment | Date: 2016-12-20
The present invention provides a temperature adjusting apparatus for a focus ring, wherein heat radiated from the plasma onto the focus ring is transferred downward to a base through the first heat conducting pad contacting a lower surface of the focus ring, an insulating ring contacting a lower surface of the first heat conducting pad, and the second heat conducting pad contacting a lower surface of the insulating ring, so as to be cooled by a cooling system provided at the base; turning on a heater disposed in a grounded shielding ring to generate a controllable external heating source, heat from the heater being transferred to the focus ring through the shielding ring, a third heat conducting pad contacting the shielding ring, the insulating ring contacting the third heat conducting pad, and the first heat conducting pad, so as to perform controllable warming to the focus ring. By providing a good heat conduction path in conjunction with controllable heating power, the present invention achieves a fine control of the working temperature of the focus ring such that it is tunable in processing such as etching, thereby satisfying processing demands.
Advanced Micro-Fabrication Equipment | Date: 2016-07-14
A method for MOCVD gas showerhead pretreatment, which includes: providing a reaction chamber, an evacuating system located at bottom of reaction chamber and a gas showerhead fixed on top of reaction chamber. The gas showerhead includes the cooling plate at the bottom and gas supplying system on the top; the processing steps include filling high-pressure pretreatment gas into reaction chamber-exhausting pretreatment gas-filling air-exhausting air and many other procedures; circulating above procedures until accomplishment of pretreatment on gas showerhead in the reaction chamber and other exposed components.
Pearl Kogyo Co. and Advanced Micro-Fabrication Equipment | Date: 2015-06-19
A high frequency power supply device and power supplying method are disclosed, which can rapidly and accurately control power used for generation of plasmas. The device includes a first high frequency power supply, providing power at frequency f1, and a second high frequency power supply providing power at frequency f2 (f1>f2). The first power supply includes: a first high frequency oscillator, which excites the high frequency power at the first frequency and has a variable frequency; a first power amplification block, which amplifies the power of the high frequency oscillator; a heterodyne detection block, which performs heterodyne detection of a reflected wave; and a first control block, which receives a signal after detection of the heterodyne detection block and a traveling wave signal, and controls an oscillating frequency of the first high frequency oscillating block and an output of the first power amplification block.
Advanced Micro-Fabrication Equipment | Date: 2015-11-25
A system for processing substrates having an atmospheric front end and a vacuum main frame, primary processing chambers attached to the main frame, a loadlock positioned between the front end and the main frame, and at least one secondary processing chamber attached to the loadlock.
Advanced Micro-Fabrication Equipment | Date: 2016-07-11
An ICP A plasma reactor having an enclosure wherein at least part of the ceiling forms a dielectric window. A substrate support is positioned within the enclosure below the dielectric window. An RF power applicator is positioned above the dielectric window to radiate RF power through the dielectric window and into the enclosure. A plurality of gas injectors are distributed uniformly above the substrate support to supply processing gas into the enclosure. A circular baffle is situated inside the enclosure and positioned above the substrate support but below the plurality of gas injectors so as to redirect the flow of the processing gas.
Advanced Micro-Fabrication Equipment | Date: 2016-04-26
A chemical vapor deposition apparatus includes: a reaction chamber, a reaction area in the upper portion of the reaction chamber, an exhaust area in the bottom portion of the reaction chamber and a pumping apparatus connected to the outside of the reaction chamber. The exhaust area includes an isolating device dividing the exhaust area into an exhaust chamber and a storage chamber. The isolating device has a sidewall with gas openings connecting the exhaust chamber and the storage chamber. The exhaust area further includes a scraping component that can move up and down between the upper end and the lower end of the gas openings.
Advanced Micro-Fabrication Equipment | Date: 2016-02-12
The invention is related to a process component and the method to improve the MOCVD reaction. The principle of the improvement is to cover a compact protection film on the stainless steel body in the MOCVD reaction chamber. Said film is composed of the elements of the gas required during the MOCVD deposition process, or the elements that will not react with the reaction gases of MOCVD. Said film is a compound composed of at least one of the Al, Ga and Mg and at least one of the oxygen or nitrogen, or the other materials with stable chemical characteristics that will not react with the gases in the MOCVD process. Said film will not react with the gases in the MOCVD process or add contaminants to the MOCVD reaction chamber. Therefore, it could reduce the initialization time of the MOCVD process, and improve the efficiency of the MOCVD equipment. The protection film has the compact organization with the porosity less than 1%, and the thickness of the protection film is 1 nm to 0.5 mm.