Advanced Micro-Fabrication Equipment | Date: 2016-07-14
A method for MOCVD gas showerhead pretreatment, which includes: providing a reaction chamber, an evacuating system located at bottom of reaction chamber and a gas showerhead fixed on top of reaction chamber. The gas showerhead includes the cooling plate at the bottom and gas supplying system on the top; the processing steps include filling high-pressure pretreatment gas into reaction chamber-exhausting pretreatment gas-filling air-exhausting air and many other procedures; circulating above procedures until accomplishment of pretreatment on gas showerhead in the reaction chamber and other exposed components.
Advanced Micro-Fabrication Equipment | Date: 2016-12-21
The invention relates to an electrode structure for ICP etcher, including: inductive coils, inductive coil connectors, connect rods and sleeve; in which, inductive coils are set on insulation window and insulation window is set on chamber lid; two ends of the connect rods respectively connect inductive coils and inductive coil connectors; the sleeve is made of conductive material and grounded; first end of the sleeve is covered by a cap while the second is opening; the cap has holes, and the connect rods are set pass through the holes and isolated from the cap; the opening of sleeve is set toward inductive coils, and the inductive coils are shielded inside the sleeve. This invention shields electromagnetic field generated by inductive coil connectors outside the sleeve to avoid influence of even electromagnetic field generated to inductive coils, and guarantee even etching.
Advanced Micro-Fabrication Equipment | Date: 2016-11-28
The invention relates to a substrate processing method and relevant apparatus. The method includes: placing the substrate into a reactor consist by several walls; delivering etching gas to the reactor to etch the substrate; receiving optical signal from the reactor with the inspection window arranged on at least one of said walls to determine the endpoint of etching; generating protective gas flow in the inspection window during etching process, to prevent or reduce the etching gas or etching by-product flow toward the inspection window. This invention could improve the accuracy and stability of etching endpoint detection.
Pearl Kogyo Co. and Advanced Micro-Fabrication Equipment | Date: 2015-06-19
A high frequency power supply device and power supplying method are disclosed, which can rapidly and accurately control power used for generation of plasmas. The device includes a first high frequency power supply, providing power at frequency f1, and a second high frequency power supply providing power at frequency f2 (f1>f2). The first power supply includes: a first high frequency oscillator, which excites the high frequency power at the first frequency and has a variable frequency; a first power amplification block, which amplifies the power of the high frequency oscillator; a heterodyne detection block, which performs heterodyne detection of a reflected wave; and a first control block, which receives a signal after detection of the heterodyne detection block and a traveling wave signal, and controls an oscillating frequency of the first high frequency oscillating block and an output of the first power amplification block.
Advanced Micro-Fabrication Equipment | Date: 2015-11-19
The present invention relates to a device of changing the gas flow pattern in the process chamber and a wafer processing method and system; a gas introduced from the gas inlet to the process chamber will process the wafer in the process chamber; a gas center ring is set in the process chamber to adjust the gas flow pattern, which includes a fixed component under the gas inlet and above the wafer, and a movable ring could locate in the first position or the second position respectively; when the movable ring is in the first position, the gas is delivered downwards to the wafer via the first opening set on the fixed component; when the movable ring is in the second position, the gas is delivered downwards to the wafer via the second opening set on the movable ring. The present invention constitutes the gas center ring by different combinations of fixed component and movable component, to change the gas flow pattern in the process chamber, achieving effective control on the wafer processing effects and to dispense with opening the process chamber during the adjustment process of gas center ring.
Advanced Micro-Fabrication Equipment | Date: 2015-11-25
A system for processing substrates having an atmospheric front end and a vacuum main frame, primary processing chambers attached to the main frame, a loadlock positioned between the front end and the main frame, and at least one secondary processing chamber attached to the loadlock.
Advanced Micro-Fabrication Equipment | Date: 2015-06-17
A gas shower device, a device and a method for chemical vapor deposition. A gas shower device has a showerhead. The showerhead includes a center region and a periphery region surrounding the center region; the center region and periphery region of the showerhead have a plurality of second gas-outlets which are arranged in parallel; the second gas-outlets are used to output the second gas; a first gas-outlet arranged between two adjacent second gas-outlets, includes the first sub-gas-outlet located in the center region and the second sub-gas-outlet located in the periphery region; the first sub-gas-outlet and the second sub-gas-outlet are mutually isolated, the first sub-gas-outlet is used to output the first gas and the second sub-gas-outlet is used to output the second gas; a first gas channel is connected to the first sub-gas-outlet; a second gas channel is connected to the second gas-outlet and the second sub-gas-outlet. The film formation quality is improved by using the chemical vapor deposition device with the gas shower device.
Advanced Micro-Fabrication Equipment | Date: 2016-07-11
An ICP A plasma reactor having an enclosure wherein at least part of the ceiling forms a dielectric window. A substrate support is positioned within the enclosure below the dielectric window. An RF power applicator is positioned above the dielectric window to radiate RF power through the dielectric window and into the enclosure. A plurality of gas injectors are distributed uniformly above the substrate support to supply processing gas into the enclosure. A circular baffle is situated inside the enclosure and positioned above the substrate support but below the plurality of gas injectors so as to redirect the flow of the processing gas.
Advanced Micro-Fabrication Equipment | Date: 2016-04-26
A chemical vapor deposition apparatus includes: a reaction chamber, a reaction area in the upper portion of the reaction chamber, an exhaust area in the bottom portion of the reaction chamber and a pumping apparatus connected to the outside of the reaction chamber. The exhaust area includes an isolating device dividing the exhaust area into an exhaust chamber and a storage chamber. The isolating device has a sidewall with gas openings connecting the exhaust chamber and the storage chamber. The exhaust area further includes a scraping component that can move up and down between the upper end and the lower end of the gas openings.
Advanced Micro-Fabrication Equipment | Date: 2016-02-12
The invention is related to a process component and the method to improve the MOCVD reaction. The principle of the improvement is to cover a compact protection film on the stainless steel body in the MOCVD reaction chamber. Said film is composed of the elements of the gas required during the MOCVD deposition process, or the elements that will not react with the reaction gases of MOCVD. Said film is a compound composed of at least one of the Al, Ga and Mg and at least one of the oxygen or nitrogen, or the other materials with stable chemical characteristics that will not react with the gases in the MOCVD process. Said film will not react with the gases in the MOCVD process or add contaminants to the MOCVD reaction chamber. Therefore, it could reduce the initialization time of the MOCVD process, and improve the efficiency of the MOCVD equipment. The protection film has the compact organization with the porosity less than 1%, and the thickness of the protection film is 1 nm to 0.5 mm.