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Advanced Mask Technology Center GmbH | Date: 2016-06-10

A reflective photomask includes a substrate with a substrate layer of a low thermal expansion material. The substrate layer includes a main portion of a first structural configuration and an auxiliary portion of a second structural configuration of the low thermal expansion material. The auxiliary portion is formed in a frame section surrounding a pattern section of the substrate. A multilayer mirror is formed on a first surface of the substrate. A reflectivity of the multilayer mirror is at least 50% at an exposure wavelength below 15 nm. A frame trench extending through the multilayer mirror exposes the substrate in the frame section. The auxiliary portion may include scatter centres for out-of-band radiation.

Agency: European Commission | Branch: H2020 | Program: ECSEL-IA | Phase: ECSEL-02-2014 | Award Amount: 181.08M | Year: 2015

The SeNaTe project is the next in a chain of thematically connected ENIAC JU KET pilot line projects which are associated with 450mm/300mm development for the 12nm and 10nm technology nodes. The main objective is the demonstration of the 7nm IC technology integration in line with the industry needs and the ITRS roadmap on real devices in the Advanced Patterning Center at imec using innovative device architecture and comprising demonstration of a lithographic platform for EUV and immersion technology, advanced process and holistic metrology platforms, new materials and mask infrastructure. A lithography scanner will be developed based on EUV technology to achieve the 7nm module patterning specification. Metrology platforms need to be qualified for N7s 1D, 2D and 3D geometries with the appropriate precision and accuracy. For the 7nm technology modules a large number of new materials will need to be introduced. The introduction of these new materials brings challenges for all involved processes and the related equipment set. Next to new deposition processes also the interaction of the involved materials with subsequent etch, clean and planarization steps will be studied. Major European stakeholders in EUV mask development will collaboratively work together on a number of key remaining EUV mask issues. The first two years of the project will be dedicated to find the best options for patterning, device performance, and integration. In the last year a full N7 integration with electrical measurements will be performed to enable the validation of the 7nm process options for a High Volume Manufacturing. The SeNaTe project relates to the ECSEL work program topic Process technologies More Moore. It addresses and targets as set out in the MASP at the discovery of new Semiconductor Process, Equipment and Materials solutions for advanced CMOS processes that enable the nano-structuring of electronic devices with 7nm resolution in high-volume manufacturing and fast prototyping.

Nesladek P.,Advanced Mask Technology Center GmbH | Rummelin S.,Advanced Mask Technology Center GmbH | Okoroanyanwu U.,Globalfoundries
Proceedings of SPIE - The International Society for Optical Engineering | Year: 2012

This paper presents results of the optimization of an EUV mask cleaning process and compares the results to data obtained on COG and EPSM masks using processes specifically designed for such masks. The key parameter investigated was cleaning efficiency, as measured in terms of Particle Removal Efficiency (PRE), CD shift and actinic reflectivity change. The PRE of 100%, 84%, and 80% was obtained for COG, EUV and HT-PSM masks, respectively. The CD change per clean cycle was 0.07nm. The feature damage limit was 50nm. Actinic reflectivity change in the range <0.1% per clean cycle was obtained for the process. © 2012 SPIE.

Standiford K.,Globalfoundries | Burgel C.,Advanced Mask Technology Center GmbH
Proceedings of SPIE - The International Society for Optical Engineering | Year: 2013

When compared to conventional chrome absorber masks, electron beam patterning of EUV masks requires additional corrections to account for intermediate range electron backscattering from the mirror and tantalum based absorber layers. The performance of this Mask Proximity Correction software should not be specified based solely on traditional mask linearity measures. We propose a new mask linearity specification based on Time Dependent Dielectric Breakdown requirements for metal layers. © 2013 SPIE.

Burgel C.,Advanced Mask Technology Center GmbH | Standiford K.,Globalfoundries | Chua G.S.,Globalfoundries
Proceedings of SPIE - The International Society for Optical Engineering | Year: 2013

The 50keV ebeam exposure of EUV blanks leads to additional electron backscattering from the tantalum layer and the mirror portion of the blank substrate that cannot be adequately corrected by in-tool algorithms. Coupling this additional backscatter with process effects, such as develop and etch micro/macro loading, results in significant systematic Critical Dimension (CD) errors for through pitch and linearity patterns on EUV masks. In wafer production EUV masks are targeted as single layer exposure, which requires extremely stringent CD control. The systematic CD errors can easily exceed the CD requirements of a typical EUV mask, facilitating the need for a correction scheme or mask process correction (MPC). AMTC and GLOBALFOUNDRIES have started a program to evaluate MPC solutions and drive improvements. Working closely with companies that provide solutions for ebeam and process modelling along with the corresponding correction, we have completed several iterations of MPC evaluations. Specifically, we have tested different equipment, processes and process partitioning for model calibration including a verification of the results. We report on the results of these evaluations, which include simulation of available models, as well as verification data from mask prints. We conclude by summarizing the current capabilities of available MPC solutions and present the remaining gaps for model and correction accuracy as well as the remaining questions for fully implementing MPC into the process landscape. © 2013 SPIE.

Knoth S.,Advanced Mask Technology Center GmbH
Frontiers in Statistical Quality Control 9 | Year: 2010

Following an idea of Box, Hunter & Hunter (1978), the consideration of the log of the sample variance S2 became quite popular in SPC literature concerned with variance monitoring. The sample standard deviation S and the range R are the most common statistics in daily SPC practice. SPC software packages that are used in semiconductor industry offer exclusively R and S control charts. With Castagliola (2005) one new log based transformation started in 2005. Again, the search for symmetry and quasi-normality served as reason to look for a new chart statistic. Symmetry of the chart statistic could help in setting up two-sided control charts. Here, a comparison study is done that looks especially to the two-sided setup, straightens out the view of the available set of competing statistics used for variance monitoring and, eventually, leads to recommendations that could be given in order to choose the right statistic. © Springer-Verlag Berlin Heidelberg 2010.

Utzny C.,Advanced Mask Technology Center GmbH
Proceedings of SPIE - The International Society for Optical Engineering | Year: 2013

Traditional control of critical dimensions (CD) on photolithographic masks considers the CD average and a measure for the CD variation such as the CD range or the standard deviation. Also systematic CD deviations from the mean such as CD signatures are subject to the control. These measures are valid for mask quality verification as long as patterns across a mask exhibit only size variations and no shape variation. The issue of shape variations becomes especially important in the context of contact holes on EUV masks. For EUV masks the CD error budget is much smaller than for standard optical masks. This means that small deviations from the contact shape can impact EUV waver prints in the sense that contact shape deformations induce asymmetric bridging phenomena. In this paper we present a detailed study of contact shape variations based on regular product data. Two data sets are analyzed: 1) contacts of varying target size and 2) a regularly spaced field of contacts. Here, the methods of statistical shape analysis are used to analyze CD SEM generated contour data. We demonstrate that contacts on photolithographic masks do not only show size variations but exhibit also pronounced nontrivial shape variations. In our data sets we find pronounced shape variations which can be interpreted as asymmetrical shape squeezing and contact rounding. Thus we demonstrate the limitations of classic CD measures for describing the feature variations on masks. Furthermore we show how the methods of statistical shape analysis can be used for quantifying the contour variations thus paving the way to a new understanding of mask linearity and its specification. © 2013 SPIE.

Advanced Mask Technology Center GmbH | Date: 2014-04-07

A method of manufacturing a photomask includes forming a mask pattern with a critical mask feature on a photomask. Shape information which is descriptive for an outline of the critical mask feature is obtained from the photomask. The shape information contains position information identifying the positions of landmarks on the outline relative to each other. The landmarks may indicate local curvature extrema, points of inflexion, sharp bends in the curvature and/or local curvature-change maxima in the outline of the mask feature, respectively. The shape information may enable a shape metrology which is not completely based on rectangular approximations of mask features.

Advanced Mask Technology Center GmbH | Date: 2012-10-16

An EUV mask set and method of manufacturing is disclosed. In one embodiment, a set of EUV mask blanks is inspected to obtain information about defects in each of the EUV mask blanks. From the obtained information, a set of complementary functional portions is determined, wherein each functional portion is assigned to one of the EUV mask blanks and does not contain any of the defects. The functional portions of the EUV mask blanks of the EUV mask blank set complement one another to form a virtual image area corresponding in size to image areas of the EUV mask blanks. A predefined mask pattern is provided on the EUV mask blanks. Information identifying position and shape of the functional portions is used to control an illumination process for imaging the predefined mask pattern onto a target.

Nesladek P.,Advanced Mask Technology Center GmbH
Proceedings of SPIE - The International Society for Optical Engineering | Year: 2014

EUV lithography is currently the favorite and most promising candidate among the next generation lithography (NGL) technologies. Decade ago the NGL was supposed to be used for 45 nm technology node. Due to introduction of immersion 193nm lithography, double/triple patterning and further techniques, the 193 nm lithography capabilities was greatly improved, so it is expected to be used successfully depending on business decision of the end user down to 10 nm logic. Subsequent technology node will require EUV or DSA alternative technology. Manufacturing and especially process development for EUV technology requires significant number of unique processes, in several cases performed at dedicated tools. Currently several of these tools as e.g. EUV AIMS or actinic reflectometer are not available on site yet. The process development is done using external services /tools with impact on the single unit process development timeline and the uncertainty of the process performance estimation, therefore compromises in process development, caused by assumption about similarities between optical and EUV mask made in experiment planning and omitting of tests are further reasons for challenges to unit process development. Increased defect risk and uncertainty in process qualification are just two examples, which can impact mask quality / process development. The aim of this paper is to identify critical aspects of the EUV mask manufacturing with respect to defects on the mask with focus on mask cleaning and defect repair and discuss the impact of the EUV specific requirements on the experiments needed. © 2014 SPIE.

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