Adaptive Plasma Technology Corporation APTC

Ich'ŏn, South Korea

Adaptive Plasma Technology Corporation APTC

Ich'ŏn, South Korea
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Kim S.I.,Kookmin University | Lee J.H.,Kookmin University | Kim H.-K.,Kookmin University | Kim S.J.,Adaptive Plasma Technology Corporation APTC | And 3 more authors.
Science of Advanced Materials | Year: 2016

In this study, an etching system with an adaptively coupled plasma source was employed in the accelerated ion bombardment of TEOS SiO2 thin film and measurements of the plasma damage of the surface were performed using a nanoindenter and via scanning probe microscopy under various etching conditions. As the plasma source power and bias power increased from 800 to 1200 W and from 600 to 1200 W, respectively, the surface hardness of the film increased by approximately 1 GPa compared to that before plasma etching; the value changed from 9.51 to 9.72 GPa and from 9.51 to 9.79 GPa, respectively, at a maximum penetration depth of 140 nm. These results can be explained as the combined effects of accelerated ion bombardment and plasma heating during plasma etching. © 2016 by American Scientific Publishers All rights reserved.


Kim S.I.,Kookmin University | Kim S.J.,Kookmin University | Park M.J.,Kookmin University | Park T.-H.,Adaptive Plasma Technology Corporation APTC | And 5 more authors.
Science of Advanced Materials | Year: 2015

In this study, an etching system together with the adaptively coupled plasma (ACP) source was employed, to measure the surface physical uniformity after plasma etching of 300 mm silicon wafers under various etching conditions. The physical uniformity of the Si surface was measured using a scanning probe microscope and a nano-indenter system. As the plasma source power was increased from 800 to 1200 W and the working pressure from 5 to 15 mTorr, the surface hardness changed from 9.51 to 9.94 GPa, and from 8.94 to 9.87 GPa, respectively. Under the same plasma conditions, the elastic modulus changed from 128.45 to 144.43 GPa, and from 91.26 to 141.75 GPa, respectively. These results indicate the hardening of the thin film surface owing to the very nature of the ACP source, which is characterized by high plasma density. © 2015 by American Scientific Publishers.

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