Accelicon Technologies Inc.

Cupertino, CA, United States

Accelicon Technologies Inc.

Cupertino, CA, United States

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Li Y.F.,Accelicon Technologies Inc. | Li M.,Accelicon Technologies Inc. | Zhao J.Y.,Accelicon Technologies Inc. | Schrimpf R.D.,Vanderbilt University | And 5 more authors.
Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS | Year: 2011

A systematic flow is described for characterizing, modeling, and simulating single event transient-induced soft errors in cell-based designs. Pulse broadening effects are quantified for a 65 nm CMOS process. © 2011 IEEE.


Zhang Y.,Xidian University | Li M.,Accelicon Technologies Inc. | Li Y.-F.,Accelicon Technologies Inc. | Ma X.-H.,Xidian University | And 2 more authors.
ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings | Year: 2010

Based on the Reaction-Diffusion framework, an improved NBTI model is proposed with the consideration of moving diffusion front in oxide and poly-Si layer. The dependence of degradation on channel length and width is taken into account simultaneously for the first time. The model is implemented with Verilog-A to be compatible with commercial simulators and verified by experimental data. ©2010 IEEE.


Tang Y.,Tsinghua University | Li M.,Accelicon Technologies Inc. | Wang Y.,Tsinghua University
ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings | Year: 2010

In this paper, a novel methodology to fully automate inductor model extraction with guaranteed physical scalability is proposed. A consistent automatic frequency range selection mechanism is added to the direct extraction flow of a 2-π model to ensure the underlying physical trend and scalability. The method is validated with 45 inductor measurements with frequency up to 20 GHz, both good accuracy and scalability are achieved without many manual intervention. ©2010 IEEE.


Li M.,Accelicon Technologies Inc. | Li Y.F.,Accelicon Technologies Inc. | Wu Y.J.,Accelicon Technologies Inc. | Cai S.,Accelicon Technologies Inc. | And 9 more authors.
IEEE Transactions on Nuclear Science | Year: 2011

An automated flow is described for total-ionizing dose (TID)-aware SPICE model generation that includes TID response and its dependence on process variability and layout. A memetic algorithm that balances multiple objectives, subject to realistic constraints, is introduced for global optimization of the flow. A differential evolution algorithm is adapted for global exploration, and a modified random pattern search strategy is introduced for local exploitation. The optimizer efficiently reduces the value of different kinds of objective functions in the extraction at reasonable cost and avoids premature convergence in most practical cases. The model is implemented in Verilog-A, can be applied to all foundry model formats, and supports all popular SPICE simulators. To validate the flow, simulations from models extracted from specific targets are compared with measured current-voltage characteristics under various irradiation conditions for 0.35 μm, 0.18 μm, and 90 nm bulk CMOS processes. © 2011 IEEE.


Zhang Y.,Tsinghua University | Li M.,Accelicon Technologies Inc. | Shi Y.,Tsinghua University | Zhang L.,Tsinghua University | Wang Y.,Tsinghua University
ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings | Year: 2010

A new extraction method for InGaP/GaAs HBTs based on direct optimization is proposed. Through modification of conventional GP formulation, the variations of transport saturation current and ideal forward transit time versus biases are incorporated into the compact model. Rather than intense and complicated iterative optimization, this new parameter extraction methodology realized the united optimization for DC and RF performances together for the first time. The new modeling approach is verified by comparing the simulated DC curves as well as S-parameter with the measured data of InGaP/GaAs HBT over wide frequency and bias ranges. The excellent results demonstrate the effectiveness of the modeling methodology for InGaP/GaAs HBTs. ©2010 IEEE.


Chen Q.,Accelicon Technologies Inc. | Zhong X.,Accelicon Technologies Inc. | Wu Y.,Accelicon Technologies Inc. | Zhu N.,Accelicon Technologies Inc. | And 5 more authors.
Proceedings - IEEE International SOI Conference | Year: 2011

This paper presents an exploratory application of BSIM-IMG (May/2011-release) to ET/UTBB SOI MOSFET modeling and circuit simulations. Compliance with fundamental compact model requirements and physical scalability with respect to technology parameters in BSIM-IMG are analyzed. BSIM-IMG model parameters are extracted on a 20nm technology. Simulation results are presented both for conventional benchmark and ET/UTBB SOI specific circuits. © 2011 IEEE.


Li Y.,Accelicon Technologies Inc. | Rezzak N.,Vanderbilt University | Schrimpf R.D.,Vanderbilt University | Fleetwood D.M.,Vanderbilt University | And 5 more authors.
ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings | Year: 2010

Space applications using advanced foundry processes require accurate assessment of the dependence of total-ionizing dose (TID) response on process variability and layout. A new test chip is described to enable large sample of device measurements under irradiation. The variability of TID-induced leakage current and transistor mismatch both increase after irradiation. ©2010 IEEE.


Li Y.,Accelicon Technologies Inc. | Rezzak N.,Vanderbilt University | Zhang E.X.,Vanderbilt University | Schrimpf R.D.,Vanderbilt University | And 5 more authors.
IEEE Transactions on Nuclear Science | Year: 2010

Space applications using advanced foundry processes require device models that accurately include the dependence of total-ionizing dose (TID) response on process variability and layout. An automated flow is described for TID-aware process design kit generation using new test chips, modeling, and simulation. The variability of TID-induced leakage current and transistor mismatch both increase after irradiation. © 2010 IEEE.


Rezzak N.,Vanderbilt University | Schrimpf R.D.,Vanderbilt University | Alles M.L.,Vanderbilt University | Zhang E.X.,Vanderbilt University | And 2 more authors.
IEEE Transactions on Nuclear Science | Year: 2010

The effects of shallow-trench-isolation-induced mechanical stress on radiation-induced off-state leakage current are reported in 90-nm NMOS devices. The radiation-induced leakage current increases with increasing active device-to-isolation spacing. The leakage current also depends on channel width; narrow devices exhibit less leakage before irradiation, but more after irradiation. These geometrical factors affect the mechanical stress in the device, which impact the dopant diffusion and activation and the charge trapping in the STI oxide. The combined effects of these layout-related phenomena affect the sensitivity to radiation-induced charge. © 2010 IEEE.


Li Y.,Accelicon Technologies Inc. | Zhu N.,Accelicon Technologies Inc. | Li M.,Accelicon Technologies Inc. | Wu Y.,Accelicon Technologies Inc. | And 4 more authors.
ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings | Year: 2010

Variability from different sources such as layout-dependent effects due to strain has been a main obstacle against aggressive design rules and reducing corner margins in 32nm node and beyond. This paper reports and demonstrates a model development and verification platform to accurately address layout dependences due to strain. This platform has been successfully used in real design exercises at 40nm technology and is being applied for 32nm technology. Test structures and methodologies of developing and verifying stress enhancement models are presented. The platform has been demonstrated to be flexible enough to account for new layout-dependent reliability behavior in strain engineering technologies. ©2010 IEEE.

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