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Tang Y.,Tsinghua University | Li M.,Accelicon Technologies Inc. | Wang Y.,Tsinghua University
ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings | Year: 2010

In this paper, a novel methodology to fully automate inductor model extraction with guaranteed physical scalability is proposed. A consistent automatic frequency range selection mechanism is added to the direct extraction flow of a 2-π model to ensure the underlying physical trend and scalability. The method is validated with 45 inductor measurements with frequency up to 20 GHz, both good accuracy and scalability are achieved without many manual intervention. ©2010 IEEE. Source


Zhang Y.,Tsinghua University | Li M.,Accelicon Technologies Inc. | Shi Y.,Tsinghua University | Zhang L.,Tsinghua University | Wang Y.,Tsinghua University
ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings | Year: 2010

A new extraction method for InGaP/GaAs HBTs based on direct optimization is proposed. Through modification of conventional GP formulation, the variations of transport saturation current and ideal forward transit time versus biases are incorporated into the compact model. Rather than intense and complicated iterative optimization, this new parameter extraction methodology realized the united optimization for DC and RF performances together for the first time. The new modeling approach is verified by comparing the simulated DC curves as well as S-parameter with the measured data of InGaP/GaAs HBT over wide frequency and bias ranges. The excellent results demonstrate the effectiveness of the modeling methodology for InGaP/GaAs HBTs. ©2010 IEEE. Source


Rezzak N.,Vanderbilt University | Schrimpf R.D.,Vanderbilt University | Alles M.L.,Vanderbilt University | Zhang E.X.,Vanderbilt University | And 2 more authors.
IEEE Transactions on Nuclear Science | Year: 2010

The effects of shallow-trench-isolation-induced mechanical stress on radiation-induced off-state leakage current are reported in 90-nm NMOS devices. The radiation-induced leakage current increases with increasing active device-to-isolation spacing. The leakage current also depends on channel width; narrow devices exhibit less leakage before irradiation, but more after irradiation. These geometrical factors affect the mechanical stress in the device, which impact the dopant diffusion and activation and the charge trapping in the STI oxide. The combined effects of these layout-related phenomena affect the sensitivity to radiation-induced charge. © 2010 IEEE. Source


Li Y.F.,Accelicon Technologies Inc. | Li M.,Accelicon Technologies Inc. | Zhao J.Y.,Accelicon Technologies Inc. | Schrimpf R.D.,Vanderbilt University | And 5 more authors.
Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS | Year: 2011

A systematic flow is described for characterizing, modeling, and simulating single event transient-induced soft errors in cell-based designs. Pulse broadening effects are quantified for a 65 nm CMOS process. © 2011 IEEE. Source


Chen Q.,Accelicon Technologies Inc. | Zhong X.,Accelicon Technologies Inc. | Wu Y.,Accelicon Technologies Inc. | Zhu N.,Accelicon Technologies Inc. | And 5 more authors.
Proceedings - IEEE International SOI Conference | Year: 2011

This paper presents an exploratory application of BSIM-IMG (May/2011-release) to ET/UTBB SOI MOSFET modeling and circuit simulations. Compliance with fundamental compact model requirements and physical scalability with respect to technology parameters in BSIM-IMG are analyzed. BSIM-IMG model parameters are extracted on a 20nm technology. Simulation results are presented both for conventional benchmark and ET/UTBB SOI specific circuits. © 2011 IEEE. Source

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