Lubbock, TX, United States
Lubbock, TX, United States

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Day J.,Texas Tech University | Li J.,III-N Technology, Inc. | Lie D.Y.C.,Texas Tech University | Bradford C.,U.S. Army | And 2 more authors.
Proceedings of SPIE - The International Society for Optical Engineering | Year: 2012

Micro-size light emitting diode (μLED) arrays based on III-nitride semiconductors have emerged as a promising technology for a wide range of applications. If InGaN μLED arrays can be integrated on to Si complementary metal-oxide-semiconductor (CMOS) substrates for active driving, these devices could play crucial roles in ultra-portable products such as next generation pico-projectors, as well as in emerging fields such as biophotonics and optogenetics. Here we present a demonstration of, and methods for, creating a highresolution solid-state self-emissive microdisplay based on InGaN/GaN semiconductors. An energy efficient active drive scheme is accomplished by integrating micro-emitter arrays with CMOS active matrix drivers that are flip-chip bonded together via indium metal bumps. © 2011 Copyright Society of Photo-Optical Instrumentation Engineers (SPIE).


Day J.,Texas Tech University | Li J.,III-N Technology, Inc. | Lie D.Y.C.,Texas Tech University | Bradford C.,U.S. Army | And 2 more authors.
Applied Physics Letters | Year: 2011

We report the realization and properties of a high-resolution solid-state self-emissive microdisplay based on III-nitride semiconductor micro-size light emitting diodes (μLEDs) capable of delivering video graphics images. The luminance level of III-nitride microdisplays is several orders of magnitude higher than those of liquid crystal and organic-LED displays. The pixel emission intensity was almost constant over an operational temperature range from 100 to -100 °C. The outstanding performance is a direct attribute of III-nitride semiconductors. An energy efficient active drive scheme is accomplished by hybrid integration between μLED arrays and Si CMOS (complementary metal-oxide-semiconductor) active matrix integrated circuits. These integrated devices could play important roles in emerging fields such as biophotonics and optogenetics, as well as ultra-portable products such as next generation pico-projectors. © 2011 American Institute of Physics.


Grant
Agency: Department of Defense | Branch: Army | Program: STTR | Phase: Phase I | Award Amount: 100.00K | Year: 2010

Research in silicon photonics has received much attention in recent years for its potential to utilize well developed silicon processing technology. A broad range of linear and nonlinear silicon photonic devices such as modulators, splitters, switches and detectors have been demonstrated. However, the most important challenge in silicon photonics thus far is the difficulty of making electrically pumped light sources and amplifiers. The objective of this project is to develop new types of optical emitters and amplifiers on silicon. The proposed approach is to utilize epitaxial growth of III-nitride semiconductors on Si substrate with in-situ erbium (Er) doping by metal-organic chemical vapor deposition (MOCVD). The approach is based on successful synthesizing of III-nitride UV/visible photonic structures on Si and Er-doped III-nitride photonic structures, achieved jointly by III-N Technology, Inc and Texas Tech University. These photonic structures predominantly exhibited the desired optical emission for optical communication at 1.5 micron. The technical aims are to (a) Further develop MOCVD growth technology for obtaining device quality InGaN on Si; (b) Optimize in-situ Er incorporation into III-nitride device structures; (c) Develop device fabrication technology for the realization of Er-doped nitride optical amplifiers and emitters active at 1.5 micron.


III-N Technology, Inc. | Entity website

Contact Information: Email: 3n@3n-tech.com


III-N Technology, Inc. | Entity website


III-N Technology, Inc. | Entity website


III-N Technology, Inc. | Entity website

III-N Technology, Inc III-N Technology, Inc. (3N) has developed extensive integrated micro-photonic device technologies based on III-nitride wide bandgap semiconductors, aluminum nitride (AlN), gallium nitride (GaN), indium nitride ( InN) and their alloys (AlGaN, InGaN, and InAlGaN) ...

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