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Hayes J.,Wolfspeed A Cree Company | George K.,Wolfspeed A Cree Company | Killeen P.,Wolfspeed A Cree Company | McPherson B.,Wolfspeed A Cree Company | And 2 more authors.
WiPDA 2016 - 4th IEEE Workshop on Wide Bandgap Power Devices and Applications | Year: 2016

Circuit protection devices and power distribution units for future More Electric / All Electric Aircraft (MEA/AEA) power systems require an increased level of control and intelligence along with fast-acting protection mechanisms. The trend towards utilizing solid-state power electronics for system-level protection of MEA/AEA systems has increased due to the many advantages provided over electromechanical solutions. Furthermore, the emergence and rapid maturation of Silicon Carbide (SiC) power semiconductor device technology has led to their preferred use in applications conventionally dominated by legacy Silicon (Si) technology. The superior electrical and thermal performance of SiC enables the implementation of rugged, power dense solid-state circuit breakers (SSCBs) that meet the current and future power demands of MEA/AEA power systems. This paper presents a SiC-based SSCB for applications within MEA/AEA power systems. The design and development of a SSCB technology demonstrator based on an all-SiC power module is presented. Experimental results demonstrating the interruption and extinction of a 250 A fault in 10 μs, and a 450 A fault in 70 μs on a 270 Vdc bus is given. © 2016 IEEE.


Van Brunt E.,Wolfspeed A Cree Company | Wang G.,Wolfspeed A Cree Company | Liu J.,Wolfspeed A Cree Company | Pala V.,Wolfspeed A Cree Company | And 3 more authors.
Proceedings of the International Symposium on Power Semiconductor Devices and ICs | Year: 2016

This work describes the operation of commercial 4H-SiC Junction-Barrier Schottky (JBS) Diodes at extreme voltage slew rates (dV/dt) in an attempt to force failures. Slew rates in excess of 700 kVμs were required to damage parts, in combination with high values of the reverse bus voltage. Cryogenic temperatures reduced the maximum bus voltage required to induce failure. Large quantities of parts were subjected to repetitive dV/dt stress with a slew rate of 400 kVμs, then tested for avalanche ruggedness in unclamped inductive switching (UIS) conditions. No differences were detected between the stressed diode population and a control population, indicating that dV/dt stress induces neither immediate failures nor latent weakness. © 2016 IEEE.

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