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Hinojosa M.,U.S. Army | Ogunniyi A.,U.S. Army | Bayne S.,Texas Tech University | van Brunt E.,A Cree Company | Ryu S.-H.,A Cree Company
Materials Science Forum | Year: 2016

This paper presents the current progress in the development of an electro-thermal numerical model for 22 kV 4H-silicon carbide IGBTs. This effort involved the creation of a TCAD model based on doping profiles and structural layers to simulate the steady-state and switching characteristics of recently-fabricated experimental devices. The technical challenge of creating this high voltage SiC IGBT model was incorporating semiconductor equations with sub-models representing carrier mobility, generation, recombination, and lattice heat flow effects with parameters conditioned for 4H-silicon carbide material. Simulations of the steady-state and switching characteristics were performed and later verified with laboratory measurements for an Ntype SiC IGBT rated for 22 kV with an active area of 0.37 cm2and a drift region of 180 μm. © 2016 Trans Tech Publications, Switzerland. Source


Yuferev V.S.,RAS Ioffe Physical - Technical Institute | Levinshtein M.E.,RAS Ioffe Physical - Technical Institute | Ivanov P.A.,RAS Ioffe Physical - Technical Institute | Zhang J.Q.,A Cree Company | Palmour J.W.,A Cree Company
Solid-State Electronics | Year: 2016

Main physical features of the collector resistance modulation processes have been studied via a one-dimensional simulation for n +-p-n 0-n + 4H-SiC bipolar junction transistor. The motion dynamics of minority carriers (holes) across the n 0 collector layer during the switch-on process is traced. It is demonstrated that the effective modulation of the collector resistance is only possible in the case of a rather fast transistor switch-on. A necessary condition for the fast switch-on is the large amplitude and short leading edge of the base current pulse. © 2016 Elsevier Ltd. Source


Houston Dycus J.,North Carolina State University | Xu W.,North Carolina State University | Lichtenwalner D.J.,A Cree Company | Hull B.,A Cree Company | And 2 more authors.
Applied Physics Letters | Year: 2016

Here, we report on the chemistry and structure of 4H-SiC/SiO2 interfaces passivated either by nitric oxide annealing or Ba deposition. Using aberration corrected scanning transmission electron microscopy and spectroscopy, we find that Ba and N remain localized at SiC/SiO2 interface after processing. Further, we find that the passivating species can introduce significant changes to the near-interface atomic structure of SiC. Specifically, we quantify significant strain for nitric oxide annealed sample where Si dangling bonds are capped by N. In contrast, strain is not observed at the interface of the Ba treated samples. Finally, we place these results in the context of field effect mobility. © 2016 Author(s). Source


Mnatsakanov T.T.,All Russia Electrotechnical Institute | Levinshtein M.E.,RAS Ioffe Physical - Technical Institute | Tandoev A.G.,All Russia Electrotechnical Institute | Yurkov S.N.,All Russia Electrotechnical Institute | Palmour J.W.,A Cree Company
Solid-State Electronics | Year: 2016

Transport phenomena in Schottky diodes are analyzed at high injection levels of minority carriers. It is shown that the correct description of these phenomena requires that the mode of diffusion stimulated by the quasi-neutral drift (DSQD) should be considered. An analytical expression for current-voltage characteristics of a Schottky diode at high injection levels is derived. The expression predicts a seemingly paradoxical result: the higher the base doping level, the higher the voltage drop across a diode at the same current density. The analytical results are confirmed by computer simulations. The results may be important for analyses of SiC Junction Barrier Schottky (JBS) diodes at very high current densities (surge current mode). © 2016 Elsevier Ltd. Source


Pala V.,A Cree Company | van Brunt E.,A Cree Company | Hull B.,A Cree Company | Allen S.,A Cree Company | Palmour J.,A Cree Company
Materials Science Forum | Year: 2016

Due to their low switching energies, knee-less forward characteristics, and a robust, low reverse recovery body diode, SiC MOSFETs are ideal candidates to replace silicon IGBTs in many high-power medium-voltage topologies. This paper demonstrates how SiC MOSFETs can be effectively combined in series and parallel to maximize the system power density and performance. © 2016 Trans Tech Publications, Switzerland. Source

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