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Marcoussis, France

Bettiati M.A.,3S Photonics
Microelectronics Reliability | Year: 2013

The optical-strength properties of 3S PHOTONICS GaAs-based semiconductor laser structures are presented. After some general considerations about this robustness issue, typical of high-power diode lasers, the performances in both CW and pulsed current injection of our best vertical structures are presented and it is shown that our current generation of 980 nm laser diodes can withstand very high facet temperatures (180-200 C) in stable CW operation. Thus, we demonstrate a large margin between the facet temperature in operation conditions and the observed maximum critical value. Maximum CW saturation powers exceeding 3 W from a single-lateral mode device have been obtained with the longest laser cavities (7.5 mm) at around 5 A. Also, very high peak powers are demonstrated in pulsed current experiments opening the way to new specific applications, using available production devices. Specific degradation patterns after high peak current single-pulse induced damage have been observed by cathodo-luminescence imaging and are also discussed. Finally, comparisons between devices emitting at 980 nm and 1060 nm are considered. © 2013 Elsevier Ltd. All rights reserved. Source


Raad P.E.,SMU | Komarov P.L.,SMU | Bettiati M.A.,3S Photonics
18th International Workshop on Thermal Investigation of ICs and Systems, THERMINIC 2012 | Year: 2012

This work examines the difficulties associated with using optical techniques to measure temperature when the device itself emits a significant level of light over a wide spectrum, making it a challenge to separate the useful measurement signal from the device emission. The specific situation considered here is that of using a thermoreflectance (TR) thermography approach to characterize the thermal behavior of semiconductor laser devices. A lowpass filter was placed in the optical path to minimize the primary laser irradiation on the TR imaging and then the TR response of the region of interest was determined over a wide range of visible light wavelengths to locate the maximum response. TR measurements performed at the optimal light wavelength successfully provided a submicron-resolution map of the active area of sample lasers. © 2012 CMP. Source


Raad P.E.,SMU | Komarov P.L.,TMX Scientific | Bettiati M.A.,3S Photonics
Microelectronics Journal | Year: 2014

This work examines the difficulties associated with using optical techniques to measure temperature when the device itself emits a significant level of light over a wide spectrum, making it a challenge to separate the useful measurement signature from the device light emission. The specific situation considered here is that of using a thermoreflectance (TR) thermography approach to characterize the thermal behavior of semiconductor laser devices. A lowpass filter was placed in the optical path to minimize the primary laser irradiation on the TR imaging and then the TR response of the region of interest was determined over a wide range of visible light wavelengths to locate the maximum response. TR measurements performed at the optimal light wavelength successfully provided a submicron-resolution temperature map of the active area of sample lasers. © 2014 Elsevier Ltd. Source


Hempel M.,Max Born Institute For Nichtlineare Optik Und Kurzzeitspektroskopie | Tomm J.W.,Max Born Institute For Nichtlineare Optik Und Kurzzeitspektroskopie | Yue F.,Max Born Institute For Nichtlineare Optik Und Kurzzeitspektroskopie | Yue F.,East China Normal University | And 2 more authors.
Laser and Photonics Reviews | Year: 2014

Infrared emission from 980-nm single-mode high power diode lasers is recorded and analyzed in the wavelength range from 0.8 to 8.0 μm. A pronounced short-wavelength infrared (SWIR) emission band with a maximum at 1.3 μm originates from defect states located in the waveguide of the devices. The SWIR intensity is a measure of the non-equilibrium carrier concentration in the waveguide, allowing for a non-destructive waveguide mapping in spatially resolved detection schemes. The potential of this approach is demonstrated by measuring spatially resolved profiles of SWIR emission and correlating them with mid-wavelength infrared (MWIR) thermal emission along the cavity of devices undergoing repeated catastrophic optical damage. The enhancement of SWIR emission in the damaged parts of the cavity is due to a locally enhanced carrier density in the waveguide and allows for an analysis of the spatial damage patterns. The figure shows a side view of a diode laser during catastrophic degradation as recorded by a thermocamera within 5 successive current pulses. The geometry of the device is given in grayscale. The position of the laser chip is indicated by the dotted line. The thermal signatures of the internal degradation of the diode laser are overlaid in color. The bi-directional spread of the damage along the laser cavity is clearly visible. Emission from 980-nm single-mode high power diode lasers is analyzed in the wavelength range from 0.8 to 8.0 μm. Short-wavelength infrared (SWIR) emission with a maximum at 1.3 μm originates from defect states located in the waveguide of the devices. Thus, the SWIR intensity is a measure of the non-equilibrium carrier concentration there, allowing for a non-destructive mapping of this parameter. The potential of this approach is demonstrated by comparing the SWIR data with thermal measurements. © 2014 by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. Source


Hempel M.,Max Born Institute For Nichtlineare Optik Und Kurzzeitspektroskopie | Tomm J.W.,Max Born Institute For Nichtlineare Optik Und Kurzzeitspektroskopie | Yue F.,East China Normal University | Bettiati M.,3S Photonics | Elsaesser T.,Max Born Institute For Nichtlineare Optik Und Kurzzeitspektroskopie
Proceedings of SPIE - The International Society for Optical Engineering | Year: 2015

The infrared emission from 980-nm single-mode high power diode lasers is analyzed in the wavelength range from 0.8 to 7.0 μm. A pronounced short-wavelength infrared (SWIR) emission band with a maximum at 1.3 μm is found to originate from defect states located within the waveguide of the devices. The SWIR intensity is verified to represent a measure of the non-equilibrium carrier concentration in the waveguide, allowing for non-destructive waveguide mapping in spatially resolved detection schemes. The potential of this approach is demonstrated by measuring spatially resolved profiles of SWIR emission and correlating them with mid-wavelength infrared thermal emission along the cavity of devices undergoing repeated catastrophic optical damage. The enhancement of SWIR emission in the damaged parts of the cavity is due to a locally enhanced carrier density in the waveguide and allows for in situ analysis of the damage patterns. Moreover, spatial resolved SWIR measurements are a promising tool for device inspecting even in low-power operation regimes. © 2015 SPIE. Source

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