Hadano, Japan
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Abe M.,3D Bio Co. | Abe Y.,3D Bio Co. | Kogushi N.,Takion Co. | Ang K.S.,Nanyang Technological University | And 3 more authors.
IEEE Electron Device Letters | Year: 2012

Novel thermopiles based on modulation-doped AlGaAs/InGaAs heterostructures are proposed and developed for the first time for uncooled IR focal plane array (FPA) image sensor application. The high responsivity R with the high-speed response time τare designed to be 4900 V/W with 110 μs. Based on integrated high-electron-mobility-transistor-microelectromechanical-system technology, the 32 × 32 matrix FPAs are fabricated to demonstrate its enhanced performance by blackbody measurement. The technology presented here demonstrates the potential of this approach for low-cost uncooled IR FPA applications. © 2012 IEEE.


Ang K.S.,Nanyang Technological University | Hofstetter R.,Nanyang Technological University | Wang H.,Nanyang Technological University | Manoj K.,Nanyang Technological University | And 3 more authors.
2013 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS, DTIP 2013 | Year: 2013

In this work, modulation-doped AlGaAs/InGaAs micromachined thermopile-based infrared (IR) sensor is reported. The key features of the IR sensors are the incorporation of high mobility - modulation-doped AlGaAs/InGaAs heterostructure and a multi-layer Cr2O3 absorber combined with the surface bulk micromachined device structure to achieve high sensing performance. A responsivity of 3000 V/W and a relative detectivity of 1.4×10 8cm·Hz1/2/W at λ>5 μm have been achieved. © 2013 CMP.


Abe M.,3D bio Co.
IEICE Transactions on Electronics | Year: 2010

Novel thermopiles based on modulation doped Al-GaAs/InGaAs, AlGaN/GaN, and ZnMgO/ZnO heterostructures are proposed and designed for the first time, for uncooled infrared image sensor application. These devices are expected to offer high performances due to both the superior Seebeck coefficient and the excellently high mobility of 2DEG and 2DHG due to high purity channel layers at the heterojunction interface. The AlGaAs/InGaAs thermopile has the figure-of-merit Z of as large as 1.1 x 10"2/K (ZT = 3.3 over unity at T = 300 K), and can be realized with a high responsivity R of 15,200 V/W and a high detectivity D* of 1.8xlO9 cmHz1/2/W with uncooled low-cost potentiality. The AlGaN/GaN and the ZnMgO/ZnO thermopiles have the advantages of high sheet carrier concentration due to their large polarization charge effects (spontaneous and piezo polarization charges) as well as of a high Seebeck coefficient due to their strong phonon-drag effect. The high speed response time T of 0.9 ms with AlGaN/GaN, and also the lower cost with ZnMgO/ZnO thermopiles can be realized. The modulation-doped heterostructure thermopiles presented here are expected to be used for uncooled infrared image sensor applications, and for monolithic integrations with other photon detectors such as InGaAs, GaN, and ZnO PiN photodiodes, as well as HEMT functional integrated circuit devices. Copyright © 2010 The Institute of Electronics, Information and Communication Engineers.


Abe M.,3D bio Co. | Abe Y.,3D bio Co. | Kogushi N.,Takion Co. | Ang K.S.,Nanyang Technological University | And 3 more authors.
Infrared Physics and Technology | Year: 2013

Novel thermopile based on modulation doped AlGaAs/InGaAs heterostructures is proposed and developed for the first time, for uncooled infrared FPA (Focal Plane Array) image sensor application. The high responsivity with the high speed response time are designed to be 4900 V/W with 110 μs under the 2 μm design rule. Based on integrated HEMT-MEMS technology, the 32 × 32 matrix FPA is fabricated to demonstrate its enhanced performances by black body measurement. The technology presented here demonstrates the potential of this approach for low-cost uncooled infrared FPA image sensor application. © 2012 Elsevier B.V. All rights reserved.


Abe M.,3D bio Co. | Ang K.S.,Nanyang Technological University | Hofstetter R.,Nanyang Technological University | Wang H.,Nanyang Technological University | Ng G.I.,Nanyang Technological University
Conference Proceedings - International Conference on Indium Phosphide and Related Materials | Year: 2013

Novel thermopile based on modulation doped AlGaAs/InGaAs heterostructures is proposed and developed for uncooled infrared FPA (Focal Plane Array) image sensor application. The high sensitivity performance is designed to be the responsivity R of 33,000 V/W with the response time τ of 8 ms, and the high speed performance is designed to be R of 4,900 V/W with τ of 110 μs, under the 2 μm design rule. Based on integrated HEMT-MEMS technology, the 32×32 matrix FPA is fabricated to demonstrate its enhanced performances by black body measurement. The technology presented here demonstrates the potential of this approach for low-cost uncooled infrared FPA application. © 2013 IEEE.


Abe M.,3D bio Co. | Kogushi N.,Takion Co. | Siong Ang K.,Nanyang Technological University | Hofstetter R.,Nanyang Technological University | And 6 more authors.
IEICE Transactions on Electronics | Year: 2012

Novel thermopiles based on modulation doped Al-GaAs/InGaAs and AlGaN/GaN heterostructures are proposed and developed for the first time, for uncooled infrared FPA (Focal Plane Array) image sensor application. The high responsivity with the high speed response time are designed to 4,900V/W with 110 μs for AlGaAs/InGaAs, and to 460V/W with 9 μs for AlGaN/GaN thermopiles, respectively. Based on integrated HEMT-MEMS technology, the AlGaAs/InGaAs 32×32 matrix FPAs are fabricated to demonstrate its enhanced performances by black body measurement. The technology presented here demonstrates the potential of this approach for low-cost uncooled infrared FPA image sensor application. Copyright © 2012 The Institute of Electronics, Information and Communication Engineers.

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